It was found that BST thin film was damaged by the irradiation of high density electron beam (the current density was about 2 nA/cm2). In-situ and real time EELS showed that the intensity ratio of Ti to O edge and the...It was found that BST thin film was damaged by the irradiation of high density electron beam (the current density was about 2 nA/cm2). In-situ and real time EELS showed that the intensity ratio of Ti to O edge and the distance between Ti and O edge changed. It indicated that the film lost oxygen and thus the oxidation states of positive ions lowered. EELS study with high spatial resolution proved that compared with the inner of columnar grains, the grain boundaries with special structure and chemical environment were the main passageway of oxygen loss.展开更多
Ferroelectric Ba0.65Sr0.35TiO3 （BST） thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 ...Ferroelectric Ba0.65Sr0.35TiO3 （BST） thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 μ℃/cm^2 and a coercive field of about 21.5 kV/cm. The investigations of X-ray diffraction and atomic force microscopy show that the BST films annealed at 650 ℃ exhibit a tetragonal structure and that the films dominantly consist of large column or grains of about 89 nm in diameter. The curves of the temperature dependence of dielectric coefficient in different frequencies display the curie transition at the temperature around 23 ℃. The dielectric loss tangent of BST thin fdms at 100 kHz is less than 0.04. As a result, the BST thin films are more applicable for fabrication of infrared detector compared with the BST thin films reported previously.展开更多
Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage curre...Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.展开更多
Sr05Ba0.5-xBixTiO3 （BST） thin films were fabricated on a Pt/SiO2/Si substrate by the sol-gel method. Then follows an investigation of the influeoces of bismuth （Bi） on the microstructures and the dielectric proper...Sr05Ba0.5-xBixTiO3 （BST） thin films were fabricated on a Pt/SiO2/Si substrate by the sol-gel method. Then follows an investigation of the influeoces of bismuth （Bi） on the microstructures and the dielectric properties of Sr0.5Ba0.5-xBixTiO3 （BST） thin films. The microstructures of the BST thin films were examined by the XRD and the TEM techniques. Tetragonal perovskite crystal grains were observed in BST thin films. Increasing Bi^3＋ doping ration in BST will lead to decrease of the grain size. It is found that Bi^3＋ doping decreases the dielectric loss and improves the frequency dispersion of the BST thin films. Not only is compressed the peak of temperature-dependence of dielectric constant of Bi^3＋-doped BST thin films but also moves into the low-temperature region. Moreover, the average Curie tem- perature decreases gradually with the Bi^3＋ contents increasing.展开更多
Epitaxial Ba0.6Sr0.4TiO3 （BST） thin films were deposited on LaAlO3 （LAO） substrates with the conductive metallic oxide La0.5 Sr0.5CoO3 （LSCO） film as a bottom electrode by pulsed laser deposition （PLD）. X-ray ...Epitaxial Ba0.6Sr0.4TiO3 （BST） thin films were deposited on LaAlO3 （LAO） substrates with the conductive metallic oxide La0.5 Sr0.5CoO3 （LSCO） film as a bottom electrode by pulsed laser deposition （PLD）. X-ray diffraction 0-20 andФ scan showed that the epitaxial relationship of BST/LSCO /LAO was [001] BST// [001] LSCO//[001] LAO. The atomic force microscope （AFM） revealed a smooth and crack-free surface of BST films on LSCO-coated LAO substrate with the average grain size of 120 nm and the RMS of 1.564 nm for BST films. Pt/BST/LSCO capacitor was fabricated to perform Capacitance-Voltage measurement indicating good insulating characteristics. For epitaxial BST film, the dielectric constant and dielectric loss were determined as 471 and 0.03, respectively. The tunabilty was 79.59% and the leakage current was 2.63×10^-7 A/cm^2 under an applied filed of 200 kV/cm. Furthermore, it was found that epitaxial BST （60/40） fdms demonstrate well-behaved ferroelectric properties with the remnate polarization of 6.085μC/cm^2 and the coercive field of 72 kV/cm. The different electric properties from bulk BST （60/40） materials with intrinsic paraelectric characteristic are attributed to the interface effects.展开更多
基金the National Natural Science Foundation of China (Grant No. 50172024) the National 973 Project, 985 Project of Tsinghua University.
文摘It was found that BST thin film was damaged by the irradiation of high density electron beam (the current density was about 2 nA/cm2). In-situ and real time EELS showed that the intensity ratio of Ti to O edge and the distance between Ti and O edge changed. It indicated that the film lost oxygen and thus the oxidation states of positive ions lowered. EELS study with high spatial resolution proved that compared with the inner of columnar grains, the grain boundaries with special structure and chemical environment were the main passageway of oxygen loss.
文摘Ferroelectric Ba0.65Sr0.35TiO3 （BST） thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 μ℃/cm^2 and a coercive field of about 21.5 kV/cm. The investigations of X-ray diffraction and atomic force microscopy show that the BST films annealed at 650 ℃ exhibit a tetragonal structure and that the films dominantly consist of large column or grains of about 89 nm in diameter. The curves of the temperature dependence of dielectric coefficient in different frequencies display the curie transition at the temperature around 23 ℃. The dielectric loss tangent of BST thin fdms at 100 kHz is less than 0.04. As a result, the BST thin films are more applicable for fabrication of infrared detector compared with the BST thin films reported previously.
基金Project supported by the Foundation of the Education Commission of Shanghai Municipality (Grant Nos.07ZZ14, 08SG41)the National Natural Science Foundation of China (Grant No.50711130241)the Shanghai Rising Star Program (GrantNo.08QH14008)
文摘Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.
文摘Sr05Ba0.5-xBixTiO3 （BST） thin films were fabricated on a Pt/SiO2/Si substrate by the sol-gel method. Then follows an investigation of the influeoces of bismuth （Bi） on the microstructures and the dielectric properties of Sr0.5Ba0.5-xBixTiO3 （BST） thin films. The microstructures of the BST thin films were examined by the XRD and the TEM techniques. Tetragonal perovskite crystal grains were observed in BST thin films. Increasing Bi^3＋ doping ration in BST will lead to decrease of the grain size. It is found that Bi^3＋ doping decreases the dielectric loss and improves the frequency dispersion of the BST thin films. Not only is compressed the peak of temperature-dependence of dielectric constant of Bi^3＋-doped BST thin films but also moves into the low-temperature region. Moreover, the average Curie tem- perature decreases gradually with the Bi^3＋ contents increasing.
基金This work was supported by the youth science and technology fund of University of Electronic Science and Technology of China No.L08010301JX0617.
文摘Epitaxial Ba0.6Sr0.4TiO3 （BST） thin films were deposited on LaAlO3 （LAO） substrates with the conductive metallic oxide La0.5 Sr0.5CoO3 （LSCO） film as a bottom electrode by pulsed laser deposition （PLD）. X-ray diffraction 0-20 andФ scan showed that the epitaxial relationship of BST/LSCO /LAO was [001] BST// [001] LSCO//[001] LAO. The atomic force microscope （AFM） revealed a smooth and crack-free surface of BST films on LSCO-coated LAO substrate with the average grain size of 120 nm and the RMS of 1.564 nm for BST films. Pt/BST/LSCO capacitor was fabricated to perform Capacitance-Voltage measurement indicating good insulating characteristics. For epitaxial BST film, the dielectric constant and dielectric loss were determined as 471 and 0.03, respectively. The tunabilty was 79.59% and the leakage current was 2.63×10^-7 A/cm^2 under an applied filed of 200 kV/cm. Furthermore, it was found that epitaxial BST （60/40） fdms demonstrate well-behaved ferroelectric properties with the remnate polarization of 6.085μC/cm^2 and the coercive field of 72 kV/cm. The different electric properties from bulk BST （60/40） materials with intrinsic paraelectric characteristic are attributed to the interface effects.
