Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr(50)Cu(50) as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature o...Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr(50)Cu(50) as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show(100)and(002) unique preferential orientations, respectively. After inserting Zr(50)Cu(50) layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25℃ to 520℃, the sheet resistance of AZO(100 nm)/Zr(50)Cu(50)(4 nm) film first increases and then decreases, and the infrared transmittance is improved. The AZO(100 nm)/Zr(50)Cu(50)(4 nm) film deposited at a substrate temperature of 360℃ exhibits a low sheet resistance of 26.7 ?/, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology.展开更多
Sputter-deposited Au/NisoFeso bilayer films were annealed in a vacuum of 5×10^-4 Pa at 523 to 723 K for 30 or 90 min. The characteristics of the bilayer films were determined by Auger electron spectroscopy, field...Sputter-deposited Au/NisoFeso bilayer films were annealed in a vacuum of 5×10^-4 Pa at 523 to 723 K for 30 or 90 min. The characteristics of the bilayer films were determined by Auger electron spectroscopy, field emission scanning electron microscopy, X- ray diffractometry, a four-point probe technique, and an alternating gradient magnetometer. When the annealing temperature and time reached 723 K and 90 min, Ni and Fe atoms markedly diffused into the Au layer. The grain size of the Au layer did not change markedly with the annealing condition. As the annealing time was 30 min and the annealing temperature exceeded 573 K, the resistance of the bilayer film increased with increasing the annealing temperature. Furthermore, the resistance of the bilayer film annealed at 723 K for 90 ,nin was lower than that of the bilayer film annealed at 723 K for 30 min. All the bilayer films showed magnetic hysteresis loops. The as-deposited bilayer film showed a hard magnetization. The bilayer film represented an easy magnetization with increasing the annealing temperature. The Au/Ni50Fe50 film that annealed at 723 K for 90 min had the lowest saturation magnetization.展开更多
Effects of Cu underlayer on the structure of Fe50Mn50 films were studied. Samples with a structure of Fe50Mn50（200 nm）/ Cu(tCu) were prepared by magnetron sputtering on thermally oxidized silicon substrates at room ...Effects of Cu underlayer on the structure of Fe50Mn50 films were studied. Samples with a structure of Fe50Mn50（200 nm）/ Cu(tCu) were prepared by magnetron sputtering on thermally oxidized silicon substrates at room temperature. The thickness of Cu underlayer varied from 0 to 60 nm in the intervals of 10 nm. High-vacuum annealing treatments, at different temperatures of 200, 300 and 400 ℃ for 1 h, respectively, on the Fe50Mn50（200 nm）/ Cu（20 nm） thin films were performed. The surface morphologies and textures of the samples were measured by field emission scan electronic microscope （FE-SEM） and X-ray diffraction（XRD）. Energy dispersive X-ray spectroscopy （EDX） and Auger electron spectroscopy（AES） were used to analyze the compositional distribution. It is found that Cu underlayer has an obvious induce effect on （111） orientation of Fe50Mn50 thin films. The induce effects of Cu on （111） orientation of Fe50Mn50 changed with the increase of Cu layer thickness and the best effect was obtained at the Cu layer thickness of 20 nm. High-vacuum annealing treatments cause the migration of Mn atoms towards surface of the film and interface between Cu layer and substrate. With the increasing annealing temperature, migration of Mn atoms is more obvious, which leads to a Fe-riched Fe-Mn alloy film.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.51571085)the Key Science and Technology Program of Henan Province,China(Grant No.19212210210)+1 种基金the Foundation of Henan Educational Committee,China(Grant No.13B430019)the Henan Postdoctoral Science Foundation,China。
文摘Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr(50)Cu(50) as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show(100)and(002) unique preferential orientations, respectively. After inserting Zr(50)Cu(50) layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25℃ to 520℃, the sheet resistance of AZO(100 nm)/Zr(50)Cu(50)(4 nm) film first increases and then decreases, and the infrared transmittance is improved. The AZO(100 nm)/Zr(50)Cu(50)(4 nm) film deposited at a substrate temperature of 360℃ exhibits a low sheet resistance of 26.7 ?/, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology.
文摘Sputter-deposited Au/NisoFeso bilayer films were annealed in a vacuum of 5×10^-4 Pa at 523 to 723 K for 30 or 90 min. The characteristics of the bilayer films were determined by Auger electron spectroscopy, field emission scanning electron microscopy, X- ray diffractometry, a four-point probe technique, and an alternating gradient magnetometer. When the annealing temperature and time reached 723 K and 90 min, Ni and Fe atoms markedly diffused into the Au layer. The grain size of the Au layer did not change markedly with the annealing condition. As the annealing time was 30 min and the annealing temperature exceeded 573 K, the resistance of the bilayer film increased with increasing the annealing temperature. Furthermore, the resistance of the bilayer film annealed at 723 K for 90 ,nin was lower than that of the bilayer film annealed at 723 K for 30 min. All the bilayer films showed magnetic hysteresis loops. The as-deposited bilayer film showed a hard magnetization. The bilayer film represented an easy magnetization with increasing the annealing temperature. The Au/Ni50Fe50 film that annealed at 723 K for 90 min had the lowest saturation magnetization.
基金Project(19974005) supported by the National Natural Science Foundation of China
文摘Effects of Cu underlayer on the structure of Fe50Mn50 films were studied. Samples with a structure of Fe50Mn50（200 nm）/ Cu(tCu) were prepared by magnetron sputtering on thermally oxidized silicon substrates at room temperature. The thickness of Cu underlayer varied from 0 to 60 nm in the intervals of 10 nm. High-vacuum annealing treatments, at different temperatures of 200, 300 and 400 ℃ for 1 h, respectively, on the Fe50Mn50（200 nm）/ Cu（20 nm） thin films were performed. The surface morphologies and textures of the samples were measured by field emission scan electronic microscope （FE-SEM） and X-ray diffraction（XRD）. Energy dispersive X-ray spectroscopy （EDX） and Auger electron spectroscopy（AES） were used to analyze the compositional distribution. It is found that Cu underlayer has an obvious induce effect on （111） orientation of Fe50Mn50 thin films. The induce effects of Cu on （111） orientation of Fe50Mn50 changed with the increase of Cu layer thickness and the best effect was obtained at the Cu layer thickness of 20 nm. High-vacuum annealing treatments cause the migration of Mn atoms towards surface of the film and interface between Cu layer and substrate. With the increasing annealing temperature, migration of Mn atoms is more obvious, which leads to a Fe-riched Fe-Mn alloy film.
