采用氧化物复合底电极的BTO薄膜结构和性能

用球磨法制备Bi4Ti3O1(2BTO)靶材。用PLD法在Pt/TiO2/SiO2/Si基片上先分别以三种氧化物SrRuO(3SRO)、LaSrCoO3(LSCO)、LaNiO3(LNO)和Pt生成复合底电极,再在其上生长了外延取向的BTO薄膜。分析了薄膜的结构和性能。结果表明,这种BTO薄膜的c轴取向得到抑制,其极化强度从0.45×10–6C/cm2提高到0.9×10–6C/cm2;矫顽场强从90×103V/cm下降到50×103V/cm。

PLD法制备0-3型xNZF-(1-x)BTO多铁复合薄膜及其极化行为研究（英文）

在采用传统固相烧结工艺制备0-3型x Ni_(0.7)Zn_(0.3)Fe_2O_4-(1-x)BaTiO_3(x=0.00,0.15,0.30,0.45)多铁复合陶瓷靶材和采用PLD技术探索纯相BaTiO_3薄膜溅射工艺的基础上,本文在不同激光能量条件下分别在Pt(111)/Ti/SiO_2/Si、0.5%铌掺杂的钛酸锶(STO:0.5%Nb)和钌酸锶(SRO)衬底上制备了相应配比的0-3型xNi_(0.7)Zn_(0.3)Fe_2O_4-(1-x)BaTiO_3(x=0.15,0.3,0.45)复合薄膜。然后详细研究了这些复合薄膜的极化行为和影响因素,以期获得更优化的PLD工艺参数。

0.5LaFe_(0.5)Co_(0.5)O_3-Bi_4Ti_3O_(12)薄膜的制备及电学性能的研究

采用溶胶-凝胶法在(111)Pt/Ti/SiO_2/Si衬底上制备了0.5LaFe_(0.5)Co_(0.5)O_3-Bi_4Ti_3O_(12)(0.5LFCO-BTO)薄膜。X射线衍射分析表明薄膜为纯相层状钙钛矿结构,扫描电子显微镜显示薄膜结晶度良好且无裂缝,粒径为100~400nm。0.5LFCO-BTO薄膜在室温条件下呈现出良好的铁电性能,其剩余极化值2Pr和矫顽场2Ec分别为48μC/cm2和290kV/cm。在频率为10kHz下,其相对介电常数εr和介电损耗tanδ分别为218.7和0.015。

Oxygen vacancy induced magnetism in BaTiO_(3-δ) and Nb:BaTiO_(3-δ) thin films

The unusual magnetic properties are observed in oxygen deficient BaTiO3-δ(BTO) and Nb:BaTiO3-δ(BNTO) thin films fabricated on SrTiO3 substrates by laser molecular beam epitaxy.The distinct magnetic hysteresis loops are observed in the oxygen deficient BTO and BNTO thin films in a temperature range of 5 to 300 K,whereas the diamagnetism is observed in both BTO and BNTO annealed at 1 atm of oxygen.The dopant Nb only enhances the magnetization in BNTO thin films,but has little effect on the coercivity.The magnetism of BTO and BNTO films is proposed to be the oxygen vacancies by origin.