We report the thickness dependence of critical current density （Jc） in YBa2Cu3O7-x （YBCO） films with BaZrO3 （BZO） and Y2O3 additions grown on single crystal LaAlO3 substrates by metalorganic deposition using tri...We report the thickness dependence of critical current density （Jc） in YBa2Cu3O7-x （YBCO） films with BaZrO3 （BZO） and Y2O3 additions grown on single crystal LaAlO3 substrates by metalorganic deposition using trifluoroacetates （TFA-MOD）. Comparing with pttre YBCO films, the Jc of BZO/Y2O3-doped YBCO films was significantly enhanced. It was also found that with the increase of the thickness of YBCO film from 0.25 μm to 1.5 μm, the Ic of BZO/Y2O3-doped YBCO film increased from 130 A/cm to 250 A/cm and yet Jc of YBCO film decreased from 6.5 MA/cm2 to 2.5 M A/cm2. The thick BZO/Y2O3-doped MOD-YBCO film showed lower Jc, which is mainly attributed to the formation of a-axis grains and pores.展开更多
低压化学气相沉积法生长的 B 掺杂 ZnO 薄膜具有良好的光散射特性，可以用作硅基薄膜太阳能电池的前电极.以 Zn （C2 H 5）2和 H 2 O 为前驱体， B2 H 6为掺杂物，通过低压化学气相沉积法在玻璃衬底上生长了 B 掺杂 ZnO 薄膜.通过 XRD、...低压化学气相沉积法生长的 B 掺杂 ZnO 薄膜具有良好的光散射特性，可以用作硅基薄膜太阳能电池的前电极.以 Zn （C2 H 5）2和 H 2 O 为前驱体， B2 H 6为掺杂物，通过低压化学气相沉积法在玻璃衬底上生长了 B 掺杂 ZnO 薄膜.通过 XRD、FESEM、四探针测试仪等手段对样品的结构特征、微观形貌及导电性能进行表征，着重研究了（110）取向的 BZO 薄膜的生长机理.结果表明，厚度在500 nm 以下的 BZO 薄膜主要表现为（002）取向，随着厚度的增加，薄膜取向开始向（110）转变.所得 BZO 镀膜玻璃在400-1000 nm范围内总透过率＞80％，雾度最高可达28％（550 nm），方块电阻最低约7Ω/□，电阻率最低约1．0×10^-3Ω·cm.展开更多
Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas mixture.The reactive sputtering technique provides us the flexibility of changing the boron concentration in the prod...Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas mixture.The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target.Textured surface was obtained in the as-deposited films.The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio.By varying the gas concentration ratio,the best obtained resistivity ~6.51×10^-4Ω-cm,mobility ~19.05 cm^2 V^-1 s^-1 and sheet resistance ~7.23Ω/□ were obtained.At lower wavelength of light,the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are>85 %.We also fabricated amorphous silicon(a-Si) thin film solar cell on the best obtained BZO layers.The overall efficiency of the a-Si solar cell is 8.14 %,found on optimized BZO layer.展开更多
Textured surface boron-doped zinc oxide （BZO） thin films were fabricated by metal organic chemical vapor deposition as transparent conductive oxide （TCO） for solar cells. The surface microstructure was characteriz...Textured surface boron-doped zinc oxide （BZO） thin films were fabricated by metal organic chemical vapor deposition as transparent conductive oxide （TCO） for solar cells. The surface microstructure was characterized by X-ray diffraction spectrum and scan- ning electron microscope. The optical transmittance was shown by optical transmittance microscope and the electrical properties were tested by Hall measurements. The thickness of the BZO film has crucial impact on the surface morphology, optical transmittance, and resistivity. The electrical and optical properties as well as surface microstructure varied inconsistently with the increase of the film thickness. The grain size and the surface roughness increased with the increase of the film thickness. The conductivity increased from 0.96x 103 tO 6.94x 103 S/cm while the optical transmittance decreased from above 85% to nearly 80% with the increase of film thickness from 195 to 1021 nm. The BZO films deposited as both front and back transparent electrodes were applied to the bifacial p- type a-Si：H/i-type a-Si：H/n-type c-Si/i-type a-Si：H/n＋-type a-Si：H heterojunction solar cells to obtain the optimized parameter of thickness. The highest efficiency of all the samples was 17.8% obtained with the BZO film thickness of 829 nm. Meanwhile, the fill factor was 0.676, the open- circuit voltage was 0.63 Vand the short-circuit density was 41.79 mA/cm2. The properties of the solar cells changing with the thickness were also investigated.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.51272250)the National Basic Research Program of China(Grant No.2011CBA00105)+1 种基金the National High Technology Research and Development Program of China(Grant No.2014AA032702)the Beijing Natural Science Foundation,China(Grant No.2152035)
文摘We report the thickness dependence of critical current density （Jc） in YBa2Cu3O7-x （YBCO） films with BaZrO3 （BZO） and Y2O3 additions grown on single crystal LaAlO3 substrates by metalorganic deposition using trifluoroacetates （TFA-MOD）. Comparing with pttre YBCO films, the Jc of BZO/Y2O3-doped YBCO films was significantly enhanced. It was also found that with the increase of the thickness of YBCO film from 0.25 μm to 1.5 μm, the Ic of BZO/Y2O3-doped YBCO film increased from 130 A/cm to 250 A/cm and yet Jc of YBCO film decreased from 6.5 MA/cm2 to 2.5 M A/cm2. The thick BZO/Y2O3-doped MOD-YBCO film showed lower Jc, which is mainly attributed to the formation of a-axis grains and pores.
基金The work has been supported by the Science and Engineering Research Board(SERB),Department of Science and Technology(SR/FTP/PS-175/2012)。
文摘Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas mixture.The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target.Textured surface was obtained in the as-deposited films.The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio.By varying the gas concentration ratio,the best obtained resistivity ~6.51×10^-4Ω-cm,mobility ~19.05 cm^2 V^-1 s^-1 and sheet resistance ~7.23Ω/□ were obtained.At lower wavelength of light,the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are>85 %.We also fabricated amorphous silicon(a-Si) thin film solar cell on the best obtained BZO layers.The overall efficiency of the a-Si solar cell is 8.14 %,found on optimized BZO layer.
文摘Textured surface boron-doped zinc oxide （BZO） thin films were fabricated by metal organic chemical vapor deposition as transparent conductive oxide （TCO） for solar cells. The surface microstructure was characterized by X-ray diffraction spectrum and scan- ning electron microscope. The optical transmittance was shown by optical transmittance microscope and the electrical properties were tested by Hall measurements. The thickness of the BZO film has crucial impact on the surface morphology, optical transmittance, and resistivity. The electrical and optical properties as well as surface microstructure varied inconsistently with the increase of the film thickness. The grain size and the surface roughness increased with the increase of the film thickness. The conductivity increased from 0.96x 103 tO 6.94x 103 S/cm while the optical transmittance decreased from above 85% to nearly 80% with the increase of film thickness from 195 to 1021 nm. The BZO films deposited as both front and back transparent electrodes were applied to the bifacial p- type a-Si：H/i-type a-Si：H/n-type c-Si/i-type a-Si：H/n＋-type a-Si：H heterojunction solar cells to obtain the optimized parameter of thickness. The highest efficiency of all the samples was 17.8% obtained with the BZO film thickness of 829 nm. Meanwhile, the fill factor was 0.676, the open- circuit voltage was 0.63 Vand the short-circuit density was 41.79 mA/cm2. The properties of the solar cells changing with the thickness were also investigated.
