Green light-emitting Ba2SiO4:Eu^2+ phosphors co-doped with La or Y were synthesized by conventional solid-state reaction technique in reductive atmosphere(a mixture of 5% H2 and 95% N2).The results showed that the...Green light-emitting Ba2SiO4:Eu^2+ phosphors co-doped with La or Y were synthesized by conventional solid-state reaction technique in reductive atmosphere(a mixture of 5% H2 and 95% N2).The results showed that the co-doping of La and Y could greatly enhance the fluorescence intensity of Ba2SiO4:Eu2+ phosphors.The optimum doping concentration expressed by the x value in(Ba0.985-1.5xREx)2SiO4:0.03Eu^2+(RE=La or Y) was determined to be of 0.05.The excitation and emission peaks of all as-synthesized phosphors were wide bands.The excitation bands ranged from 250 to 400 nm, which matched well with the wavelength of near ultraviolet white light-emitting diodes(LED) chip and could be used as a potential candidate for the fabrication of white LED.The emission bands from 450 to 550 nm were typical 5d-4f transition emission of Eu^2+ and displayed un-symmetry profiles because of the two substitution sites of Ba^2+ with Eu^2+.展开更多
基金Supported by Natural Science Foundation of Liaoning Province(20170540074)Start-up Funding for Doctoral Researchers of Dalian Polytechnic University(61020726)~~
基金Program for Changjiang Scholars and Innovative Research Team in University (IRT0730)the Key Project of Department of Science and Technology of Jiangxi ProvinceProject of Education Department of Jiangxi
文摘Green light-emitting Ba2SiO4:Eu^2+ phosphors co-doped with La or Y were synthesized by conventional solid-state reaction technique in reductive atmosphere(a mixture of 5% H2 and 95% N2).The results showed that the co-doping of La and Y could greatly enhance the fluorescence intensity of Ba2SiO4:Eu2+ phosphors.The optimum doping concentration expressed by the x value in(Ba0.985-1.5xREx)2SiO4:0.03Eu^2+(RE=La or Y) was determined to be of 0.05.The excitation and emission peaks of all as-synthesized phosphors were wide bands.The excitation bands ranged from 250 to 400 nm, which matched well with the wavelength of near ultraviolet white light-emitting diodes(LED) chip and could be used as a potential candidate for the fabrication of white LED.The emission bands from 450 to 550 nm were typical 5d-4f transition emission of Eu^2+ and displayed un-symmetry profiles because of the two substitution sites of Ba^2+ with Eu^2+.