BaTiO3 thin film has been deposited on Si(100) substrate using sol-gel process and deposited by using spin – coating technique. The BaTiO3/Si(100) structures were studied by structural and electrical characteristics....BaTiO3 thin film has been deposited on Si(100) substrate using sol-gel process and deposited by using spin – coating technique. The BaTiO3/Si(100) structures were studied by structural and electrical characteristics. The X-ray diffrac-tion of BaTiO3/Si(100) shows that the diffraction peaks become increasing sharp with increasing calcination tempera-tures indicating the enhance crystallinity of the films. Scanning electron microscopy of BaTiO3 thin films shows the crack free and uniform nature. The capacitance-voltage measurement of BaTiO3 thin film deposited on Si(100) an-nealed at 600℃ shows large frequency dispersion in the accumulation region. The current-voltage measurement of BaTiO3/Si shows the ideality factor was approaches to unity at 600℃.展开更多
Considering the characteristics of perovskite structure, a kinetic Monte Carlo(KMC) model, in which Born-Mayer- Huggins(BMH) potential was introduced to calculate the interatomic interactions and the bonding ratio was...Considering the characteristics of perovskite structure, a kinetic Monte Carlo(KMC) model, in which Born-Mayer- Huggins(BMH) potential was introduced to calculate the interatomic interactions and the bonding ratio was defined to reflect the crystallinity, was developed to simulate the growth of BaTiO3 thin film via pulsed laser deposition(PLD). Not only the atoms deposition and adatoms diffusion, but also the bonding of adatoms were considered distinguishing with the traditional algorithm. The effects of substrate temperature, laser pulse repetition rate and incident kinetic energy on BaTiO3 thin film growth were investigated at submonolayer regime. The results show that the island density decreases and the bonding ratio increases with the increase of substrate temperature from 700 to 850 K. With the laser pulse repetition rate increasing, the island density decreases while the bonding ratio increases. With the incident kinetic energy increasing, the island density decreases except 6.2 eV<Ek<9.6 eV, and the bonding ratio increases at Ek<9.6 eV. The simulation results were discussed compared with the previous experimental results.展开更多
采用溶胶–凝胶法在Pt/Ti/Si O2/Si基板上制备了Au-Ba Ti O3纳米复合薄膜,并且对其晶体结构、微观组织和介电性能进行了研究。结果表明,Au在复合薄膜中以直径为5~22 nm的Au纳米粒子弥散地分布在Ba Ti O3基体中。Au的添加量对复合薄膜的...采用溶胶–凝胶法在Pt/Ti/Si O2/Si基板上制备了Au-Ba Ti O3纳米复合薄膜,并且对其晶体结构、微观组织和介电性能进行了研究。结果表明,Au在复合薄膜中以直径为5~22 nm的Au纳米粒子弥散地分布在Ba Ti O3基体中。Au的添加量对复合薄膜的介电性能和表面形貌有很大影响,其最佳添加量约为5mol%。复合薄膜经过550℃的低温退火已经完全结晶为钙钛矿相,其介电常数与700℃退火的纯Ba Ti O3薄膜的相当。在Au-Ba Ti O3复合薄膜的结晶过程中,一方面,Au纳米粒子可能促进了中间相的分解;另一方面,Au纳米粒子诱发了钙钛矿相的异质形核,促进了Ba Ti O3的结晶化。因此,Au纳米粒子大幅度地降低了复合薄膜的退火温度,并显著提高了复合薄膜的介电性能。展开更多
文摘BaTiO3 thin film has been deposited on Si(100) substrate using sol-gel process and deposited by using spin – coating technique. The BaTiO3/Si(100) structures were studied by structural and electrical characteristics. The X-ray diffrac-tion of BaTiO3/Si(100) shows that the diffraction peaks become increasing sharp with increasing calcination tempera-tures indicating the enhance crystallinity of the films. Scanning electron microscopy of BaTiO3 thin films shows the crack free and uniform nature. The capacitance-voltage measurement of BaTiO3 thin film deposited on Si(100) an-nealed at 600℃ shows large frequency dispersion in the accumulation region. The current-voltage measurement of BaTiO3/Si shows the ideality factor was approaches to unity at 600℃.
基金Projects(10472099 10672139) supported by the National Natural Science Foundation of China+2 种基金Project(207079) supported by the Key Project of Ministry of Education of PRCProject(05FJ2005) supported by Key Project of Scientific Technological Department of Hunan Province, ChinaProject(06A072) supported by the Key Project of Education Department of Hunan Province, China
文摘Considering the characteristics of perovskite structure, a kinetic Monte Carlo(KMC) model, in which Born-Mayer- Huggins(BMH) potential was introduced to calculate the interatomic interactions and the bonding ratio was defined to reflect the crystallinity, was developed to simulate the growth of BaTiO3 thin film via pulsed laser deposition(PLD). Not only the atoms deposition and adatoms diffusion, but also the bonding of adatoms were considered distinguishing with the traditional algorithm. The effects of substrate temperature, laser pulse repetition rate and incident kinetic energy on BaTiO3 thin film growth were investigated at submonolayer regime. The results show that the island density decreases and the bonding ratio increases with the increase of substrate temperature from 700 to 850 K. With the laser pulse repetition rate increasing, the island density decreases while the bonding ratio increases. With the incident kinetic energy increasing, the island density decreases except 6.2 eV<Ek<9.6 eV, and the bonding ratio increases at Ek<9.6 eV. The simulation results were discussed compared with the previous experimental results.
文摘采用溶胶–凝胶法在Pt/Ti/Si O2/Si基板上制备了Au-Ba Ti O3纳米复合薄膜,并且对其晶体结构、微观组织和介电性能进行了研究。结果表明,Au在复合薄膜中以直径为5~22 nm的Au纳米粒子弥散地分布在Ba Ti O3基体中。Au的添加量对复合薄膜的介电性能和表面形貌有很大影响,其最佳添加量约为5mol%。复合薄膜经过550℃的低温退火已经完全结晶为钙钛矿相,其介电常数与700℃退火的纯Ba Ti O3薄膜的相当。在Au-Ba Ti O3复合薄膜的结晶过程中,一方面,Au纳米粒子可能促进了中间相的分解;另一方面,Au纳米粒子诱发了钙钛矿相的异质形核,促进了Ba Ti O3的结晶化。因此,Au纳米粒子大幅度地降低了复合薄膜的退火温度,并显著提高了复合薄膜的介电性能。
