Behavior of exciton in direct−indirect band gap Al_(x)Ga_(1−x)As crystal lattice quantum wells

Excitons have significant impacts on the properties of semiconductors.They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping.Huybrecht variational method is also found to influence the study of exciton ground state energy and ground state binding energy in Al_(x)Ga_(1−x)As semiconductor spherical quantum dots.The Al_(x)Ga_(1−x)As is considered to be a direct semiconductor at AI concentration below 0.45,and an indirect one at the concentration above 0.45.With regards to the former,the ground state binding energy increases and decreases with AI concentration and eigenfrequency,respectively;however,while the ground state energy increases with AI concentration,it is marginally influenced by eigenfrequency.On the other hand,considering the latter,while the ground state binding energy increases with AI concentration,it decreases with eigenfrequency;nevertheless,the ground state energy increases both with AI concentration and eigenfrequency.Hence,for the better practical performance of the semiconductors,the properties of the excitons are suggested to vary by adjusting AI concentration and eigenfrequency.

Laser-assisted Simulation of Dose Rate Effects of Wide Band Gap Semiconductor Devices

Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.

Influence of Defect Density, Band Gap Discontinuity and Electron Mobility on the Performance of Perovskite Solar Cells

In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 1016 cm-3 all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance.

Band gap anomaly and topological properties in lead chalcogenides

Band gap anomaly is a well-known issue in lead chalcogenides PbX （X = S, Se, Te, Po）. Combining ab initio calculations and tight-binding （TB） method, we have studied the band evolution in PbX, and found that the band gap anomaly in PbTe is mainly related to the high on-site energy of Te 5s orbital and the large s-p hopping originated from the irregular extended distribution of Te 5s electrons. Furthermore, our calculations show that PbPo is an indirect band gap （6.5 meV） semiconductor with band inversion at L point, which clearly indicates that PbPo is a topological crystalline insulator （TCI）. The calculated mirror Chern number and surface states double confirm this conclusion.

Band gap calculation and photo catalytic activity of rare earths doped rutile TiO_2

The density of states （DOS） of 17 kinds of rare earths （RE） doped rutile TiO2 was by using first-principles density functional theory （DFT） calculation. The band gap widths of RE doped futile TiO2 were important factors for altering their absorbing wavelengths. The results show that RE ions could obviously reduce the band gap widths and form of energy of ruffle TiO2 except Lu, Y, Yb and Sc, and the order of absorbing wavelengths of RE doped ruffle TiO2 were the same as that of the results of calculation. The ratio of RE dopant was another important factor for the photo catalytic ＇activity of RE doped rutile TiO2, and there was an optimal ratio of dopant. There was a constant for predigesting the calculation difficulty, respectively, which were 0.5mol.% and 100 mol^-1 under supposition. The band gap widths of RE doped rutile TiOz by DFT calculation were much larger than that by experiment. Finally, by transferring the calculation values to experiment values, it could be found and predicted that RE enlarged obviously the absorbing wavelengh of ruffle TiO2. In addition, the degree of RE ions edging out the Ti atom using the parameters of RE dements was computed.

Flexural vibration band gaps in thin plates with two-dimensional binary locally resonant structures

The complete flexural vibration band gaps are studied in the thin plates with two-dimensional binary locally resonant structures, i.e. the composite plate consisting of soft rubber cylindrical inclusions periodically placed in a host material. Numerical simulations show that the low-frequency gaps of flexural wave exist in the thin plates. The width of the first gap decreases monotonically as the matrix density increases, The frequency response of the finite periodic thin plates is simulated by the finite element method, which provides attenuations of over 20dB in the frequency range of the band gaps. The findings will be significant in the application of phononic crystals.

Tuning of band gaps for a two-dimensional piezoelectric phononic crystal with a rectangular lattice

In this paper, the elastic wave propagation in a two-dimensional piezoelectric phononic crystal is studied by considering the mechanic-electric coupling. The generalized eigenvalue equation is obtained by the relation of the mechanic and electric fields as well as the Bloch-Floquet theorem. The band structures of both the in-plane and anti-plane modes are calculated for a rectangular lattice by the planewave expansion method. The effects of the lattice constant ratio and the piezoelectricity with different filling fractions are analyzed. The results show that the largest gap width is not always obtained for a square lattice. In some situations, a rectangular lattice may generate larger gaps. The band gap characteristics are influenced obviously by the piezoelectricity with the larger lattice constant ratios and the filling fractions.

A Study of Properties of the Photonic Band Gap of Unmagnetized Plasma Photonic Crystal

In this study, the propagation of electromagnetic waves in one-dimensional plasma photonic crystals （PPCs）, namely, superlattice structures consisting alternately of a homogeneous unmagnetized plasma and dielectric material, is simulated numerically using the finite-difference time-domain （FDTD） algorithm. A perfectly matched layer （PML） absorbing technique is used in this simulation. The reflection and transmission coefficients of electromagnetic （EM） waves through PPCs are calculated. The characteristics of the photonic band gap （PBG） are discussed in terms of plasma density, dielectric constant ratios, number of periods, and introduced layer defect. These may provide some useful information for designing plasma photonic crystal devices.

INFLUENCES OF ANISOTROPY ON BAND GAPS OF 2D PHONONIC CRYSTAL

Band gaps of 2D phononic crystal with orthotropic cylindrical fillers embedded in the isotropic host are studied in this paper. Two kinds of periodic structures, namely, the square lattice and the triangle lattice, are considered. For anisotropic phononic crystal, band gaps not only depend on the periodic lattice but also the angle between the symmetry axis of orthotropic material and that of the periodic structure. Rotating these cylindrical fillers makes the angle changing continuously; as a result, pass bands and forbidden bands of the phononic crystal are changed. The plane wave expansion method is used to reduce the band gap problem to an eigenvalue problem. The numerical example is given for YBCO/Epoxy composites. The location and the width of band gaps are estimated for different rotating angles. The influence of anisotropy on band gaps is discussed based on numerical results.

Formation mechanism of the low-frequency locally resonant band gap in the two-dimensional ternary phononic crystals

The low-frequency band gap and the corresponding vibration modes in two-dimensional ternary locally resonant phononic crystals are restudied successfully with the lumped-mass method. Compared with the work of C. Goffaux and J. Sánchez-Dehesa （Phys. Rev. B 67 14 4301（2003））, it is shown that there exists an error of about 50% in their calculated results of the band structure, and one band is missing in their results. Moreover, the in-plane modes shown in their paper are improper, which results in the wrong conclusion on the mechanism of the ternary locally resonant phononic crystals. Based on the lumped-mass method and better description of the vibration modes according to the band gaps, the locally resonant mechanism in forming the subfrequency gaps is thoroughly analysed. The rule used to judge whether a resonant mode in the phononic crystals can result in a corresponding subfrequency gap is also verified in this ternary case.

Tunable band gaps in acoustic metamaterials with periodic arrays of resonant shunted piezos

Periodic arrays of resonant shunted piezoelectric patches are employed to control the wave propagation in a two-dimensional （2D） acoustic metamaterial. The performance is characterized by the finite element method. More importantly, we propose an approach to solving the conventional issue of the nonlinear eigenvalue problem, and give a convenient solution to the dispersion properties of 2D metamaterials with periodic arrays of resonant shunts in this article. Based on this modeling method, the dispersion relations of a 2D metamaterial with periodic arrays of resonant shunted piezos are calculated. The results show that the internal resonances of the shunting system split the dispersion curves, thereby forming a locally resonant band gap. However, unlike the conventional locally resonant gap, the vibrations in this locally resonant gap are unable to be completely localized in oscillators consisting of shunting inductors and piezo-patches.

Syntheses,Structures and Band Gaps of KLnSiS_4(Ln=Sm,Yb)

Two new quaternary sulfides, KSmSiS4 （1） and KYbSiS4 （2）, have been synthesized by high-temperature solid-state reaction. Single,crystal X-ray diffraction analyses indicate that both compounds crystallize in the space group P21/m, and the crystal data are as follows： a = 6.426（11）, b = 6.582（11）, c = 8.602（15）A, β= 107.90（13）°, Z = 2, V= 346.2（10） A^3, Dc = 3.317 g/cm^3, F（000） = 318,μ（MoKα） = 10.334 mm^-1, the final R = 0.0559 and wR = 0.1370 for 1; and α= 6.3244（10）, b = 6.5552（10）, c = 8.5701（15）A, β= 108.001（13）°, Z = 2, V = 337.91（9） A^3, De= 3.621 g/cm^3, F（000） = 334, μ（MoKα） = 15.737 mm^-1, the final R = 0.0422 and wR = 0.0960 for 2. The KLnSiS4 （Ln = Sm, Yb） structure consists of corrugated ∞^2 [LnSiS4]^- layers which are formed by edge-sharing LnS8 bicapped trigonal prisms and SiS4 tetrahedra. The K^＋ cations are located in the cavities defined by S2 anions between the ∞^2[LnSiS4]^- layers. Band-gap analyses show that compounds 1 and 2 are semiconductors with optical band-gaps of 2.40 and 2.34 eV, respectively.

Theoretical study on the photonic band gap in one-dimensional photonic crystals with graded multilayer structure

We theoretically investigate the photonic band gap in one-dimensional photonic crystals with a graded multilayer structure. The proposed structure constitutes an alternating composite layer （metallic nanoparticles embedded in TiO2 film） and an air layer. Regarding the multilayer as a series of capacitance, effective optical properties are derived. The dispersion relation is obtained with the solution of the transfer matrix equation. With a graded structure in the composite layer, numerical results show that the position and width of the photonic band gap can be effectively modulated by varying the number of the graded composite layers, the volume fraction of nanoparticles and the external stimuli.

Surface rumples and band gap reductions of cubic BaZrO_3 (001) surface studied by means of first-principles calculations

Electronic properties of the （001） surface of cubic BaZrO3 with BaO and ZrO2 terminations have been studied using first-principles calculations. Surface structure, partial density of states, band structure and surface energy have been obtained. We find that the largest relaxation appears in the first layer of atoms, and the relaxation of the BaO-terminated surface is larger than that of the ZrO2-terminated surface. The surface rumpling of the BaO-terminated surface is also larger than that of the ZrO2-terminated surface. Results of surface energy calculations reveal that the BaZrO3 surface is likely to be more stable than the PbZrO3 surface.

Opening Band Gap of Graphene by Chemical Doping: a First Principles Study

Single atom chemically doped graphene has been theoretically studied by density functional theory. The largest band gap, 0.62 eV, appears in arsenic atom doped graphene, then 0.60 eV comes by the tin atom, whose deformations can neither be ignored. It is also found that oxygen and iron single atom embedded graphene can open band gap by 0.52 and 0.54 eV, respectively. Moreover, doping O atom shows little distortion and high stability by charge redistribution. The band gap of Fe doped graphene is opened by orbital hybridization. The other heteroatom doped results are a little inferior to them.

Folding beam-type piezoelectric phononic crystal with low-frequency and broad band gap

A folding beam-type piezoelectric phononic crystal model is proposed to isolate vibration. Two piezoelectric bimorphs are joined by two masses as a folding structure to comprise each unit cell of the piezoelectric phononic crystal. Each bimorph is connected independently by a resistive-inductive resonant shunting circuit. The folding structure extends the propagation path of elastic waves, while its structure size remains quite small. Propagation of coupled extension-flexural elastic waves is studied by the classical laminated beam theory and transfer matrix method. The theoretical model is further verified with the finite element method(FEM). The effects of geometrical and circuit parameters on the band gaps are analyzed. With only 4 unit cells, the folding beam-type piezoelectric phononic crystal generates two Bragg band gaps of 369 Hz to1 687 Hz and 2 127 Hz to 4 000 Hz. In addition, between these two Bragg band gaps, a locally resonant band gap is induced by resonant shunting circuits. Appropriate circuit parameters are used to join these two Bragg band gaps by the locally resonant band gap.Thus, a low-frequency and broad band gap of 369 Hz to 4 000 Hz is obtained.

Effects of rotating noncircular scatterers on spin-wave band gaps of two-dimensional magnonic crystals

Using the plane-wave expansion method, the spin-wave band structures of two-dimensional magnonic crystals consisting of square arrays of different shape scatterers are calculated numerically, and the effects of rotating rectangle and hexagon scaterers on the gaps are studied, respectively. The results show that the gaps can be substantially opened and tuned by rotating the scatterers. This approach should be helpful in designing magnonic crystals with desired gaps.

Band gap engineering of atomically thin two-dimensional semiconductors

Atomically thin two-dimensional （2D） layered materials have potential applications in nanoelectronics, nanophoton- ics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes （LEDs）, and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices.

Glass Formation and Optical Band Gap Studies on Bi_2O_3-B_2O_3-BaO Ternary System

The glass forming region of Bi2O3-B2O3-BaO ternary system was investigated. A serial of glass samples with high Bi2O3 content in Bi2O3-B2O3-BaO system were prepared by using conventional melting and quenching meld, and the refractive indexes and absorption spectra of samples were measured. It is found that the refractive index of samples as well as the UV absorption increase with the increase of BaO content. According to the Tauc law, optical band gap Eopg which is assumed to be the effective energy band gap Eg is calculated and decreases with the increasing BaO content, and the ratio of Eg/Eopg is 1.3.

One-dimensional structure made of periodic slabs of SiO2/InSb offering tunable wide band gap at terahertz frequency range

Optical features of a semiconductor–dielectric photonic crystal are studied theoretically. Alternating layers of micrometer sized SiO2/In Sb slabs are considered as building blocks of the proposed ideal crystal. By inserting additional layers and disrupting the regularity, two more defective crystals are also proposed. Photonic band structure of the ideal crystal and its dependence on the structural parameters are explored at the first step. Transmittance of the defective crystals and its changes with the thicknesses of the layers are studied. After extracting the optimum values for the thicknesses of the unit cells of the crystals, the optical response of the proposed structures at different temperatures and incident angles are investigated. Changes of the defect layers’ induced mode(s) are discussed by taking into consideration of the temperature dependence of the In Sb layer permittivity. The results clearly reflect the high potential of the proposed crystals to be used at high temperature terahertz technology as a promising alternative to their electronic counterparts.