High performance wide bandgap perovskite solar cell with low V_(OC) deficit less than 0.4 V

Wide bandgap perovskite solar cells(PSCs)have attracted significant attention because they can be applied to the top cells of tandem solar cells.However,high open-circuit voltage(V_(OC))deficit(>0.4 V)result from poor crystallization and high non-radiative recombination losses become a serious limitation in the pursuit of high performance.Here,the relevance between different Pbl_(2)proportions and performance parameters are revealed through analysis of surface morphology,residual stress,and photostability.The increase of Pbl_(2)proportion promotes crystal growth and reduces the work function of the perovskite film surface and promotes the energy level alignment with the carrier transport layer,which decreased the V_(OC)deficit.However,residual PbI_(2)exacerbated the stress level of perovskite film,and the resulting lattice disorder deteriorated the photostability of the device.Ultimately,after the synergistic passivation of residual PbI_(2)and PEAI,the V_(OC)achieves 1.266 V and V_(OC)deficit is less than 0.4 V,the record value in wide bandgap PSCs.

Low-frequency bandgap and vibration suppression mechanism of a novel square hierarchical honeycomb metamaterial

The suppression of low-frequency vibration and noise has always been an important issue in a wide range of engineering applications.To address this concern,a novel square hierarchical honeycomb metamaterial capable of reducing low-frequency noise has been developed.By combining Bloch’s theorem with the finite element method,the band structure is calculated.Numerical results indicate that this metamaterial can produce multiple low-frequency bandgaps within 500 Hz,with a bandgap ratio exceeding 50%.The first bandgap spans from 169.57 Hz to 216.42 Hz.To reveal the formation mechanism of the bandgap,a vibrational mode analysis is performed.Numerical analysis demonstrates that the bandgap is attributed to the suppression of elastic wave propagation by the vibrations of the structure’s two protruding corners and overall expansion vibrations.Additionally,detailed parametric analyses are conducted to investigate the effect ofθ,i.e.,the angle between the protruding corner of the structure and the horizontal direction,on the band structures and the total effective bandgap width.It is found that reducingθis conducive to obtaining lower frequency bandgaps.The propagation characteristics of elastic waves in the structure are explored by the group velocity,phase velocity,and wave propagation direction.Finally,the transmission characteristics of a finite periodic structure are investigated experimentally.The results indicate significant acceleration amplitude attenuation within the bandgap range,confirming the structure’s excellent low-frequency vibration suppression capability.

Floating periodic pontoons for broad bandgaps of water waves

The narrow attenuation bands of traditional marine structures have long been a challenge in mitigating water waves.In this paper,a metastructure(MS)composed of floating periodic pontoons is proposed for broadband water wave attenuation.The interaction of surface gravity waves with the MS is investigated using linear wave theory.The potential solutions of water waves by the MS with a finite array are developed by using the eigenfunction expansion matching method(EEMM),and the band structure of the MS is calculated by the transfer matrix method(TMM),in which the evanescent modes of waves are considered.The solution is verified against the existing numerical result for a special case.Based on the present solution,the association between Bragg resonance reflection and Bloch bandgaps is examined,the effects of pontoon geometry are analyzed,and the comparison between floating MS and bottom-mounted periodic structures is conducted.A computational fluid dynamics(CFD)model is further developed to assess the structures in practical fluid environments,and the floating MS presents excellent wave attenuation performance.The study presented here may provide a promising solution for protecting the coast and offshore structures.

Surface-functionalized hole-selective monolayer for high efficiency single-junction wide-bandgap and monolithic tandem perovskite solar cells

Carbazole moiety-based 2PACz([2-(9H-carbazol-9-yl)ethyl]phosphonic acid)self-assembled monolayers(SAMs)are excellent hole-selective contact(HSC)materials with abilities to excel the charge-transferdynamics of perovskite solar cells(PSCs).Herein,we report a facile but powerful method to functionalize the surface of 2PACz-SAM,by which reproducible,highly stable,high-efficiency wide-bandgap PSCs can be obtained.The 2PACz surface treatment with various donor number solvents improves assembly of 2PACz-SAM and leave residual surface-bound solvent molecules on 2PACz-SAM,which increases perovskite grain size,retards halide segregation,and accelerates hole extraction.The surface functionalization achieves a high power conversion efficiency(PCE)of 17.62%for a single-junction wide-bandgap(~1.77 e V)PSC.We also demonstrate a monolithic all-perovskite tandem solar cell using surfaceengineered HSC,showing high PCE of 24.66%with large open-circuit voltage of 2.008 V and high fillfactor of 81.45%.Our results suggest this simple approach can further improve the tandem device,when coupled with a high-performance narrow-bandgap sub-cell.

Modeling and analysis of gradient metamaterials for broad fusion bandgaps

A gradient metamaterial with varying-stiffness local resonators is proposed to open the multiple bandgaps and further form a broad fusion bandgap.First,three local resonators with linearly increasing stiffness are periodically attached to the spring-mass chain to construct the gradient metamaterial.The dispersion relation is then derived based on Bloch's theorem to reveal the fusion bandgap theoretically.The dynamic characteristic of the finite spring-mass chain is investigated to validate the fusion of multiple bandgaps.Finally,the effects of the design parameters on multiple bandgaps are discussed.The results show that the metamaterial with a non-uniform stiffness gradient pattern is capable of opening a broad fusion bandgap and effectively attenuating the longitudinal waves within a broad frequency region.

Alkyl chain modulation of asymmetric hexacyclic fused acceptor synergistically with wide bandgap third component for high efficiency ternary organic solar cells

Herein,two asymmetric hexacyclic fused small molecule acceptors(SMAs),namely BP4F-HU and BP4F-UU,were synthesized.The elongated outside chains in the BP4F-UU molecule played a crucial role in optimizing the morphology of blend film,thereby improving charge mobility and reducing energy loss within the corresponding film.Notably,the PM6:BP4F-UU device exhibited a higher open-circuit voltage(V_(oc))of 0.878 V compared to the PM6:BP4F-HU device with a V_(oc)of 0.863 V.Further,a new wide bandgap SMA named BTP-TA was designed and synthesized as the third component to the PM6:BP4F-UU host binary devices,which showed an ideal complementary absorption spectrum in PM6:BP4F-UU system.In addition,BTP-TA can achieve efficient intermolecular energy transfer to BP4F-UU by fluorescence resonance energy transfer(FRET)pathway,due to the good overlap between the photoluminescence(PL)spectrum of BTP-TA and the absorption region of BP4F-UU.Consequently,ternary devices with 15wt%BTP-TA exhibits broader photon utilization,optimal blend morphology,and reduced charge recombination compared to the corresponding binary devices.Consequently,PM6:BP4F-UU:BTP-TA ternary device achieved an optimal power conversion efficiency(PCE)of 17.83%with simultaneously increased V_(oc)of 0.905 V,short-circuit current density(J_(sc))of 26.14 mA/cm^(2),and fill factor(FF)of 75.38%.

A Novel CMOS Current Mode Bandgap Reference

A novel CMOS bandgap reference is presented. The output reference of this new current mode structure can be set to an arbitrary value above the bandgap voltage of silicon,avoiding offset in application. It also overcomes the systematic mismatch of conventional current mode bandgap references. The proposed bandgap reference has been implemented in UMC 0.18μm mixed mode technology. Under the supply voltage of 1.6V, the proposed bandgap reference provides an output reference of 1.45V and consumes 27μA of supply current. Using no curvature compensation,it can reach a temperature coefficient of 23ppm/℃ from 30 to 150℃ with a line regulation of 2. 1mV/V from 1.6 to 3V and a PSRR of 40dB at DC frequency. The chip area of the bandgap reference （without pad） is 0. 088mm^2.

A Piecewise-Linear Compensated Bandgap Reference

A bandgap voltage reference is presented with a piecewise linear compensating circuit in order to reduce the temperature coefficient.The basic principle is to divide the whole operating temperature range into some sub ranges.At different temperature sub ranges the bandgap reference can be compensated by different linear functions.Since the temperature sub range is much narrower than the whole range,the compensation error can be reduced significantly.Theoretically,the precision can be improved unlimitedly if the sub ranges are narrow enough.In the given example,with only three temperature sub ranges,the temperature coefficient of a conventional bandgap reference drops from 1 5×10 -5 /℃ to 2×10 -6 /℃ over the -40℃ to 120℃ temperature range.

A Near-1V 10ppm/℃ CMOS Bandgap Reference with Curvature Compensation

A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area.

一种电流求和型的低功耗Bandgap电压基准源

为满足标准P阱CMOS工艺要求 ,设计了一种新的电流求和型Bandgap电压基准电路 ,实现了相对于地的稳定电压输出 ,并且能提供多电压基准输出 .电路采用 0 6μmUMCP阱CMOS工艺验证 ,HSPICE模拟结果表明 :电路输出基准电压为 80 0mV ;在 - 40～ 85℃的温度变化范围内 ,电路温度系数仅为 1 4× 1 0 -6/℃ ;电源电压为 3 5V时 ,电路功耗低 ,消耗电流仅为 1 5 μA .该电路不需改变现有工艺 ,输出灵活 。

基于ASL1000的Bandgap Trim 设计及其算法研究

在芯片生产过程中,由于工艺的影响,带隙基准电压V_(BG)会存在偏差。在芯片测试阶段,需要对V_(BG)进行trim修调,使其满足芯片参数要求。简要分析了带隙基准电压误差的来源,提出了一种E-Fuse修调电路,通过程序中的代码控制修调电阻的大小,使V_(BG)满足要求。同时,在该修调电路的基础上,采用了一种新型算法,使得测试芯片V_(BG)的时间缩短了近558 ms,减少了测试时间,降低了测试成本。

Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys

The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E＋ and E0 ＋ A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.

A resistorless CMOS bandgap reference with below 1 V output

This paper proposes a resistorless CMOS bandgap reference (BGR) circuit capable of generating a voltage less than 1V and presents a high performance start up circuit that can make the BGR circuit achieve the correct operation point at power on. The simulation with Hspice was carried out using a 0 25 μm CMOS process. The results indicate that the proposed BGR circuit can operate on a 2 2 to 3 3 V power supply and its output voltage has a variation of 11 mV at -10 to 80 ℃.

A High-PSRR CMOS Bandgap Reference Without Resistor

A CMOS bandgap reference （BGR） without a resistor,with a high power supply rejection ratio and output be- low 1V is proposed. The circuit is suited for on-chip voltage down converters. The BGR is designed and fabricated using an HUTC 0.18μm CMOS process. The silicon area is only 0. 031mm^2 excluding pads and electrostatic-discharge （ESD） protec- tion circuits. Experimental results show that the PSRR of the proposed BGR at 100Hz and lkHz achieves, respectively, - 70 and 62dB using the pre-regulator. The proposed BGR circuit generates an output voltage of 0. 5582V with a varia- tion of 1.5mV in a temperature range from 0 to 85℃. The deviation of the output voltage is within 2mV when the power supply voltage VDD changes from 2.4 to 4V.

Design of a Bandgap Reference with a Wide Supply Voltage Range

An on-chip voltage reference with a wide supply voltage range is required by some applications,especially that of power management （PM） controller chips applied to telecommunication, automotive, lighting equipment, etc., when high power supply voltage is needed. Accordingly,a new bandgap reference with a wide supply voltage range is proposed. Due to the improved structure,it features a high power supply rejection ratio （PSRR） and high temperature stability. In addition, an auxiliary micro-power reference is introduced to support the sleep mode of the PM chip and reduce its standby power consumption. The auxiliary reference provides bias currents in normal mode and a 1.28V reference voltage in sleep mode to replace the main reference and save power. Simulation results show that the reference provides a reference volt- age of 1.27V,which has a 3.5mV drift over the temperature range from -20 to 120~C and 56t^V deviation over a supply voltage range from 3 to 40V. The PSRR is higher than 100dB for frequency below 10kHz. The circuit was completed in 1.5tzm BCD （Bipolar-CMOS-DMOS） technology. The experimental results show that all main expectations are achieved.

Bandgap Reference Design by Means of Multiple Point Curvature Compensation

A new method,namely multiple point curvature compensation （MPCC）,is proposed for the design of a bandgap reference,and its design principles, theoretical derivation, and one feasible circuitry implementation are presented. Being different from traditional techniques, this idea focuses on finding multiple temperatures in the whole range at which the first order derivatives of the output reference voltage equal zero. In this way, the curve of the output reference voltage is flattened and a better effect of curvature compensation is achieved. The circuitry is simulated in ST Microelectronics 0. 18μm CMOS technology, and the simulated result shows that the average temperature coefficient is only 1ppm/℃ in the range from - 40 to 125℃.

ATE测试中的Bandgap Trim技术研究

由于工艺的影响,带隙基准电压会有一定的偏差,在ATE测试阶段,需要利用trim技术对基准电压进行修调.通过一种EEPROM修调电路,在EEPROM中写入trim code来控制与trim电阻并联的开关,以达到修调基准电压的目的.同时采用了一种新颖的自动修调算法,只需要测试基准电压的初始值,就可以自动找出最佳的trim code,对于每个芯片来说既可以节省长达63.3ms的测试时间,又能够保证测试准确,降低了测试成本.通过对300个芯片的基准电压测试结果的分析,验证了这种算法的准确性.

新型的2ppm/℃分段线性bandgap电压基准源设计

bandgap是模拟电路当中的基本单元,其性能对整体电路起着关键的作用。一阶温度补偿的bandgap电压基准源其温度系数一般大于10ppm/℃,无法应用于一些高精度的系统当中。传统的Banba结构的二阶温度补偿只能对高温度段的温度系数进行调整,而低温度段的温度系数会恶化,因此难以得到极低的温度系数。提出了一种新型的分段线性补偿bandgap电压基准源电路。该电路能够在原有一阶补偿电路的基础上,对bandgap的输出电压进行分段线性曲率补偿。最终采用sm ic0.35μm工艺仿真后,bandgap输出电压的温度系数小于2ppm/℃。

Modulation of Photonic Bandgap and Localized States by Dielectric Constant Contrast and Filling Factor in Photonic Crystals

The band structure of 2D photonic crystals (PCs) and localized states resulting from defects are analyzed by finite-difference time-domain (FDTD) technique and Padé approximation.The effect of dielectric constant contrast and filling factor on photonic bandgap (PBG) for perfect PCs and localized states in PCs with point defects are investigated.The resonant frequencies and quality factors are calculated for PCs with different defects.The numerical results show that it is possible to modulate the location,width and number of PBGs and frequencies of the localized states only by changing the dielectric constant contrast and filling factor.

A new photonic bandgap cover for a patch antenna with a photonic bandgap substrate

A new photonic bandgap (PBG) cover for a patch antenna with a photonic bandgap substrate is introduced. The plane wave expansion method and the FDTD method were used to calculate such an antenna system. Numerical re-sults for the input return loss, radiation pattern, surface wave, and the directivity of the antennas are presented. A com-parison between the conventional patch antenna and the new PBG antenna is given. It is shown that the new PBG cover is very efficient for improving the radiation directivity. The physical reasons for the improvement are also given.