The simulation calculation and analysis of electron transmittance and ion stopping power for ion barrier films (IBFs) of Al2O3 and SiO2 are performed by Monte Carlo methods. The interaction model between particles and...The simulation calculation and analysis of electron transmittance and ion stopping power for ion barrier films (IBFs) of Al2O3 and SiO2 are performed by Monte Carlo methods. The interaction model between particles and solids are described. It is found that at the same conditions,the electron transmittance for SiO2 IBF is relatively higher than that of Al2O3 IBF,and the ion stopping power of SiO2 IBF is relatively lower than that of Al2O3 by Monte Carlo simulations. It is also indicated that SiO2 is one of the ideal materials for fabricating IBFs.展开更多
Maltose-pendant polymer/mica nanocomposites were prepared by a solution intercalation method. For organic composite part, 1) maltose-pendant polymer (homopolymer) and 2) the copolymer of maltose-pendant monomer and a ...Maltose-pendant polymer/mica nanocomposites were prepared by a solution intercalation method. For organic composite part, 1) maltose-pendant polymer (homopolymer) and 2) the copolymer of maltose-pendant monomer and a small amount of N,N-Dimethylamino propylacrylamide, methyl chloride quartenary were used. The morphological studies (XRD and FE-SEM) revealed that the hybrid of maltose-pendant polymer was a conventional phase separated composite. On the other hand, the hybrid using the copolymer exhibited exfoliated structure. Both the conventional composite of maltose-pendant polymer and the nanocomposite of copolymer were applied to a coating material for oxygen gas barrier layer on a nylon-6 film, and oxygen transmission rates of the films were evaluated. Maltose-pendant polymer had a good oxygen barrier property under dry condition, and the barrier property under wet condition was improved by the hybridization with mica. In contrast, the barrier property of copolymer was slightly inferior to that of maltosependant polymer. However, under dry condition, it can be seen that the nanocomposite of copolymer improves the barrier property more effectively than the case of conventional composite of maltose-pendant polymer.展开更多
This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition (PECVD) for the application of transparent barrier packaging. The var...This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition (PECVD) for the application of transparent barrier packaging. The variations of 02/Tetramethyldisiloxane (TMDSO) ratio and input power in radio frequency (RF) plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate (WVTR), oxygen transmission rate (OTR), and atomic force microscopy analysers. It is found that the 02/TMDSO ratio exceeding 2:1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier (WVTR and OTR) properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.展开更多
The fabrication of a-C:H films from methane has been performed using dielectric-barrier discharges at atmospheric pressure. The effect of combined-feed gas, such as carbon dioxide, carbon monoxide or acetylene on the ...The fabrication of a-C:H films from methane has been performed using dielectric-barrier discharges at atmospheric pressure. The effect of combined-feed gas, such as carbon dioxide, carbon monoxide or acetylene on the formation of a-C:H films has been investigated. It has been demonstrated that the addition of carbon monoxide or acetylene into methane leads to a remarkable improvement in the fabrication of a-C:H films. The characterization of carbon film obtained has been conducted using FT-IR, Raman and SEM.展开更多
The gas barrier film formation technique using simultaneous photo-irradiation and heat-treatment has been researched on alicyclic polyimide film coated with a polysilazane solution. A fine SiO2 thin film on polyimide ...The gas barrier film formation technique using simultaneous photo-irradiation and heat-treatment has been researched on alicyclic polyimide film coated with a polysilazane solution. A fine SiO2 thin film on polyimide film was formed at low temperatures, which greatly improved the substrate’s gas barrier characteristics by this technique. The values of gas barrier characteristics depended on the substrate temperature at the time of photo-irradiation. For photo-irradiated thin film heat-treated to 150°C, the water vapor transmission rate and oxygen transmission rate fell below the equipment measurement limit of 0.02 g/m2/day and 0.02 cm3/m2/day, respectively. This polyimide film with a gas-barrier film coating has good transmittance in the region of visible light, heat resistance, and flexibility.展开更多
Plasma polymerized fluorocarbon (FC) films have been deposited on silicon substrates from dielectric barrier discharge (DBD) plasma of C4Fs at room temperature under a pressure of 25~125 Pa. The effects of the di...Plasma polymerized fluorocarbon (FC) films have been deposited on silicon substrates from dielectric barrier discharge (DBD) plasma of C4Fs at room temperature under a pressure of 25~125 Pa. The effects of the discharge pressure and frequency of power supply on the films have been systematically investigated. FC films with a less cross linked structure may be formed at a relatively high pressure. Increase in the frequency of power supply leads to a significant increase in the deposition rate. Static contact angle measurements show that deposited FC films have a stable, hydrophobic surface property. All deposited films show smooth surfaces with an atomic surface roughness. The relationship between plasma parameters and the properties of the deposited FC films are discussed.展开更多
A novel co-sputtering method that combined magnetron sputtering (MS) with ion beam sputtering (IBS) was used to fabricate CuCr alloy films without breaking vacuum after depositing diffusion barrier with IBS. Different...A novel co-sputtering method that combined magnetron sputtering (MS) with ion beam sputtering (IBS) was used to fabricate CuCr alloy films without breaking vacuum after depositing diffusion barrier with IBS. Different bombardment energies were used to improve the comprehensive properties of Cu alloy film. The results indicated that the effects of diffusion barriers and bombardment energy on adhesive strength could be evaluated by a rolling contact fatigue adhesion test. Diffusion barrier can enhance the adhesive strength, and the adhesion of CuCr/CrN was higher than that of CuCr/TiN. When bombarding energy was higher, the adhesive strength of CuCr/TiN films was higher due to the broader transition zone.展开更多
The effects of excimer light irradiation on polysilazane coatings formed on PET films with vacuum-evaporated SiO2 coatings and the effects of these coatings on gas barrier characteristics have been investigated. The t...The effects of excimer light irradiation on polysilazane coatings formed on PET films with vacuum-evaporated SiO2 coatings and the effects of these coatings on gas barrier characteristics have been investigated. The temperature during light irradiation has a large effect on the coating’s molecular structure and gas barrier characteristics. When irradiation was performed at 100℃, the polysilazane coating transformed into a silica coating, and a compact silica coating at a much lower temperature than with heat treatment alone was produced. Surface irregularities in the vapor-deposited silica coating were smoothed out by the formation of a polysilazane coating, which was transformed into a compact silica coating when irradiated with light, resulting in a significant improvement in the gas barrier characteristics. The water vapor permeability of the thin coating irradiated with excimer light at 100℃ showed only 0.04 g/m2•day (40℃, 90% RH). According to the results of investigation of temperature variation of water-vapor permeability, it is inferred that the developed film has an excellent gas barrier value, namely, 4.90 × 10–4 g/m2•day at 25℃. This gas barrier coated PET film is transparent and flexible, and can be used in the fabrication of flexible electronics. Also, the proposed fabrication method effectively provides a simple low-cost and low-temperature fabrication technique without the need for high vacuum facility.展开更多
A homogeneous atmospheric pressure dielectric barrier discharge is studied. It is in argon with small admixtures of titanium tetrachloride vapour and oxygen for the deposition of thin titania films on glass substrates...A homogeneous atmospheric pressure dielectric barrier discharge is studied. It is in argon with small admixtures of titanium tetrachloride vapour and oxygen for the deposition of thin titania films on glass substrates. A special electrode configuration was applied in order to deposit the titania film uniformly. The sustaining voltage (6 kV to 12 kV), current density (about 3 mA/cm^2) and total optical emission spectroscopy were monitored to characterize the discharge in the gap of 2 mm. Typical deposition rates ranged from approximately 30 nm/min to 120 nm/min. The film morphology was investigated by using scanning electron microscopy (SEM) and the composition was determined with an energy dispersive x-ray spectroscopy (EDS) analysis tool attached to the SEM. The crystal structure and phase composition of the films were studied by x-ray diffraction (XRD). Several parameters such as the discharge power, the ratio of carrier gas to the precursor gas, the deposition time on the crystallization behavior, the deposition rate and the surface morphology of the titania film were extensively studied.展开更多
Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon (μc-Si:H) for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a s...Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon (μc-Si:H) for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a significant effect on the structures of the films. The obtained Al3Ni2 film was amorphous, while polycrystalline films were obtained when the ratio of aluminum to nickel was 1:1 and 2:3. An auger electron spectroscope and four-point probe system were applied to test the resistance to the interdiffusion between aluminum and silicon, as well as the conductivities of the AlxNiy barriers. The data of auger depth profile showed that the content of silicon was the minimum in the aluminum layer after sputtering for 4 min using AlNi thin film as the barrier layer. Compared to other AlxNiy alloys, the AlNi thin film possessed the lowest sheet resistance.展开更多
Low-pressure dielectric barrier discharge(DBD) TiCl4/O2and N2 plasmas have been used to deposit titanium oxide films at different power supply driving frequencies. A homemade large area low pressure DBD reactor was ...Low-pressure dielectric barrier discharge(DBD) TiCl4/O2and N2 plasmas have been used to deposit titanium oxide films at different power supply driving frequencies. A homemade large area low pressure DBD reactor was applied, characterized by the simplicity of the experimental set-up and a low consumption of feed gas and electric power, as well as being easy to operate. Atomic force microscopy, scanning electron microscopy, energy dispersive spectroscopy,and contact angle measurements have been used to characterize the deposited films. Experimental results show all deposited films are uniform and hydrophilic with a contact angle of about 15 o.Compared to titanium oxide films deposited in TiCl4/O2gas mixtures, those in TiCl4/O2/N2gas mixtures are much more stable. The contact angle of titanium oxide films in TiCl4/O2/N2gas mixtures with the addition of 50% N2 and 20% TiCl4 is still smaller than 20 o, while that of undoped titanium oxide films is larger than 64 owhen they are measured after one week. The low-pressure TiCl4/O2plasmas consist of pulsed glow-like discharges with peak widths of several microseconds, which leads to the uniform deposition of titanium oxide films. Increasing a film thickness over several hundreds of nm leads to the film’s fragmentation due to the over-high film stress. Optical emission spectra(OES) of TiCl4/O2DBD plasmas at various power supply driving frequencies are presented.展开更多
High-temperature sterilization is applied when film-laminated steel is used as food-can packaging material. To study the effect of this sterilization on the barrier property of biaxially oriented polyester (BOPET) f...High-temperature sterilization is applied when film-laminated steel is used as food-can packaging material. To study the effect of this sterilization on the barrier property of biaxially oriented polyester (BOPET) film,the water vapor transmission, thermal properties, and microstructure of BOPET that had undergone different sterilization time were analyzed. Results show that water vapor transmission is decreased by sterilization, and that with increased sterilization treatment time,the melting point and melting enthalpy of BOPET increases. Moreover, the microstructure of BOPET film also can be improved by sterilization ,in which the quantity of crystal nuclei and the crystallization density increase to form a network-like structure, which is beneficial to the barrier property of BOPET film.展开更多
TaNx nanoscale thin-films and Cu/TaNx multilayer structures were deposited on P-type Si(100) substrates by DC reactive magnetron sputtering. The characteristics of TaNx films and thermal stabilities of Cu/TaNx/Si syst...TaNx nanoscale thin-films and Cu/TaNx multilayer structures were deposited on P-type Si(100) substrates by DC reactive magnetron sputtering. The characteristics of TaNx films and thermal stabilities of Cu/TaNx/Si systems annealed at various temperatures were studied by four-point probe(FPP) sheet resistance measurement, atomic force microscopy(AFM), scanning electron microscope-energy dispersive spectrum (SEM-EDS), Alpha-Step IQ Profilers and X-ray diffraction(XRD), respectively. The results show that the surfaces of deposited TaNx thin-films are smooth. With the increasing of N2 partial pressure, the deposition rate and root-mean-square(RMS) decrease, while the content of N and sheet resistance of the TaNx thin-films increase, and the diffusion barrier properties of TaNx thin-films is improved. TaN1.09 can prevent interdiffusion between Cu and Si effectively after annealing up to 650 ℃ for 60 s. The failure of TaNx is mainly attributed to the formation of Cu3Si on TaN/Si interface, which results from Cu diffusion along the grain boundaries of polycrystalline TaN.展开更多
Dielectric barrier discharge at atmospheric presure has been applied to prepare hydrocarbon films on large- area glass and silicon substrates. When hydrogen and methane mixture(2:1) is used as discharge gas and the s...Dielectric barrier discharge at atmospheric presure has been applied to prepare hydrocarbon films on large- area glass and silicon substrates. When hydrogen and methane mixture(2:1) is used as discharge gas and the substrate is heated to 300 C, hard hydrogenated amorphous carbon film is deposited. From the IR deconvolution analysis of the C-H stretching absorption for the coating, the hydrocarbon group ration (CH3:CH2:CH) and C-C bond type ratio (sp3c/sp2c) are about 10%: 21%: 69% and 3:1~6:1,respectively. Their Knoop hardness is up to 10Gpa. No film isdeposited when the content of methane in the mixed gases is decreased to 5% at 300 C silicon substrate.展开更多
文摘The simulation calculation and analysis of electron transmittance and ion stopping power for ion barrier films (IBFs) of Al2O3 and SiO2 are performed by Monte Carlo methods. The interaction model between particles and solids are described. It is found that at the same conditions,the electron transmittance for SiO2 IBF is relatively higher than that of Al2O3 IBF,and the ion stopping power of SiO2 IBF is relatively lower than that of Al2O3 by Monte Carlo simulations. It is also indicated that SiO2 is one of the ideal materials for fabricating IBFs.
文摘Maltose-pendant polymer/mica nanocomposites were prepared by a solution intercalation method. For organic composite part, 1) maltose-pendant polymer (homopolymer) and 2) the copolymer of maltose-pendant monomer and a small amount of N,N-Dimethylamino propylacrylamide, methyl chloride quartenary were used. The morphological studies (XRD and FE-SEM) revealed that the hybrid of maltose-pendant polymer was a conventional phase separated composite. On the other hand, the hybrid using the copolymer exhibited exfoliated structure. Both the conventional composite of maltose-pendant polymer and the nanocomposite of copolymer were applied to a coating material for oxygen gas barrier layer on a nylon-6 film, and oxygen transmission rates of the films were evaluated. Maltose-pendant polymer had a good oxygen barrier property under dry condition, and the barrier property under wet condition was improved by the hybridization with mica. In contrast, the barrier property of copolymer was slightly inferior to that of maltosependant polymer. However, under dry condition, it can be seen that the nanocomposite of copolymer improves the barrier property more effectively than the case of conventional composite of maltose-pendant polymer.
文摘This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition (PECVD) for the application of transparent barrier packaging. The variations of 02/Tetramethyldisiloxane (TMDSO) ratio and input power in radio frequency (RF) plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate (WVTR), oxygen transmission rate (OTR), and atomic force microscopy analysers. It is found that the 02/TMDSO ratio exceeding 2:1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier (WVTR and OTR) properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.
基金The project supported by the Key Foundation of Tianjin City Committee of Science Technology and ABB Corporate Research Ltd., Switzerland
文摘The fabrication of a-C:H films from methane has been performed using dielectric-barrier discharges at atmospheric pressure. The effect of combined-feed gas, such as carbon dioxide, carbon monoxide or acetylene on the formation of a-C:H films has been investigated. It has been demonstrated that the addition of carbon monoxide or acetylene into methane leads to a remarkable improvement in the fabrication of a-C:H films. The characterization of carbon film obtained has been conducted using FT-IR, Raman and SEM.
文摘The gas barrier film formation technique using simultaneous photo-irradiation and heat-treatment has been researched on alicyclic polyimide film coated with a polysilazane solution. A fine SiO2 thin film on polyimide film was formed at low temperatures, which greatly improved the substrate’s gas barrier characteristics by this technique. The values of gas barrier characteristics depended on the substrate temperature at the time of photo-irradiation. For photo-irradiated thin film heat-treated to 150°C, the water vapor transmission rate and oxygen transmission rate fell below the equipment measurement limit of 0.02 g/m2/day and 0.02 cm3/m2/day, respectively. This polyimide film with a gas-barrier film coating has good transmittance in the region of visible light, heat resistance, and flexibility.
基金National Natural Science Foundation of China(No.10405005)
文摘Plasma polymerized fluorocarbon (FC) films have been deposited on silicon substrates from dielectric barrier discharge (DBD) plasma of C4Fs at room temperature under a pressure of 25~125 Pa. The effects of the discharge pressure and frequency of power supply on the films have been systematically investigated. FC films with a less cross linked structure may be formed at a relatively high pressure. Increase in the frequency of power supply leads to a significant increase in the deposition rate. Static contact angle measurements show that deposited FC films have a stable, hydrophobic surface property. All deposited films show smooth surfaces with an atomic surface roughness. The relationship between plasma parameters and the properties of the deposited FC films are discussed.
基金the Natural Science Foundation of China for its financial support under the granted No.59931010.
文摘A novel co-sputtering method that combined magnetron sputtering (MS) with ion beam sputtering (IBS) was used to fabricate CuCr alloy films without breaking vacuum after depositing diffusion barrier with IBS. Different bombardment energies were used to improve the comprehensive properties of Cu alloy film. The results indicated that the effects of diffusion barriers and bombardment energy on adhesive strength could be evaluated by a rolling contact fatigue adhesion test. Diffusion barrier can enhance the adhesive strength, and the adhesion of CuCr/CrN was higher than that of CuCr/TiN. When bombarding energy was higher, the adhesive strength of CuCr/TiN films was higher due to the broader transition zone.
文摘The effects of excimer light irradiation on polysilazane coatings formed on PET films with vacuum-evaporated SiO2 coatings and the effects of these coatings on gas barrier characteristics have been investigated. The temperature during light irradiation has a large effect on the coating’s molecular structure and gas barrier characteristics. When irradiation was performed at 100℃, the polysilazane coating transformed into a silica coating, and a compact silica coating at a much lower temperature than with heat treatment alone was produced. Surface irregularities in the vapor-deposited silica coating were smoothed out by the formation of a polysilazane coating, which was transformed into a compact silica coating when irradiated with light, resulting in a significant improvement in the gas barrier characteristics. The water vapor permeability of the thin coating irradiated with excimer light at 100℃ showed only 0.04 g/m2•day (40℃, 90% RH). According to the results of investigation of temperature variation of water-vapor permeability, it is inferred that the developed film has an excellent gas barrier value, namely, 4.90 × 10–4 g/m2•day at 25℃. This gas barrier coated PET film is transparent and flexible, and can be used in the fabrication of flexible electronics. Also, the proposed fabrication method effectively provides a simple low-cost and low-temperature fabrication technique without the need for high vacuum facility.
基金supported by the Science Council of Shanghai (No. 0352 nm035)
文摘A homogeneous atmospheric pressure dielectric barrier discharge is studied. It is in argon with small admixtures of titanium tetrachloride vapour and oxygen for the deposition of thin titania films on glass substrates. A special electrode configuration was applied in order to deposit the titania film uniformly. The sustaining voltage (6 kV to 12 kV), current density (about 3 mA/cm^2) and total optical emission spectroscopy were monitored to characterize the discharge in the gap of 2 mm. Typical deposition rates ranged from approximately 30 nm/min to 120 nm/min. The film morphology was investigated by using scanning electron microscopy (SEM) and the composition was determined with an energy dispersive x-ray spectroscopy (EDS) analysis tool attached to the SEM. The crystal structure and phase composition of the films were studied by x-ray diffraction (XRD). Several parameters such as the discharge power, the ratio of carrier gas to the precursor gas, the deposition time on the crystallization behavior, the deposition rate and the surface morphology of the titania film were extensively studied.
基金supported by the Fundamental Research Funds for the Central Universities of China (No. DUT10JN08)
文摘Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon (μc-Si:H) for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a significant effect on the structures of the films. The obtained Al3Ni2 film was amorphous, while polycrystalline films were obtained when the ratio of aluminum to nickel was 1:1 and 2:3. An auger electron spectroscope and four-point probe system were applied to test the resistance to the interdiffusion between aluminum and silicon, as well as the conductivities of the AlxNiy barriers. The data of auger depth profile showed that the content of silicon was the minimum in the aluminum layer after sputtering for 4 min using AlNi thin film as the barrier layer. Compared to other AlxNiy alloys, the AlNi thin film possessed the lowest sheet resistance.
基金supported by National Natural Science Foundation of China(Nos.10875025 and 20803007)Fundamental Research Funds for Central Universities of China(Nos.DC12010116 and DC13010106)Program for Liaoning Excellent Talents in University(LJQ20l3128)
文摘Low-pressure dielectric barrier discharge(DBD) TiCl4/O2and N2 plasmas have been used to deposit titanium oxide films at different power supply driving frequencies. A homemade large area low pressure DBD reactor was applied, characterized by the simplicity of the experimental set-up and a low consumption of feed gas and electric power, as well as being easy to operate. Atomic force microscopy, scanning electron microscopy, energy dispersive spectroscopy,and contact angle measurements have been used to characterize the deposited films. Experimental results show all deposited films are uniform and hydrophilic with a contact angle of about 15 o.Compared to titanium oxide films deposited in TiCl4/O2gas mixtures, those in TiCl4/O2/N2gas mixtures are much more stable. The contact angle of titanium oxide films in TiCl4/O2/N2gas mixtures with the addition of 50% N2 and 20% TiCl4 is still smaller than 20 o, while that of undoped titanium oxide films is larger than 64 owhen they are measured after one week. The low-pressure TiCl4/O2plasmas consist of pulsed glow-like discharges with peak widths of several microseconds, which leads to the uniform deposition of titanium oxide films. Increasing a film thickness over several hundreds of nm leads to the film’s fragmentation due to the over-high film stress. Optical emission spectra(OES) of TiCl4/O2DBD plasmas at various power supply driving frequencies are presented.
文摘High-temperature sterilization is applied when film-laminated steel is used as food-can packaging material. To study the effect of this sterilization on the barrier property of biaxially oriented polyester (BOPET) film,the water vapor transmission, thermal properties, and microstructure of BOPET that had undergone different sterilization time were analyzed. Results show that water vapor transmission is decreased by sterilization, and that with increased sterilization treatment time,the melting point and melting enthalpy of BOPET increases. Moreover, the microstructure of BOPET film also can be improved by sterilization ,in which the quantity of crystal nuclei and the crystallization density increase to form a network-like structure, which is beneficial to the barrier property of BOPET film.
基金Project(60371046) supported by the National Natural Science Foundation of China
文摘TaNx nanoscale thin-films and Cu/TaNx multilayer structures were deposited on P-type Si(100) substrates by DC reactive magnetron sputtering. The characteristics of TaNx films and thermal stabilities of Cu/TaNx/Si systems annealed at various temperatures were studied by four-point probe(FPP) sheet resistance measurement, atomic force microscopy(AFM), scanning electron microscope-energy dispersive spectrum (SEM-EDS), Alpha-Step IQ Profilers and X-ray diffraction(XRD), respectively. The results show that the surfaces of deposited TaNx thin-films are smooth. With the increasing of N2 partial pressure, the deposition rate and root-mean-square(RMS) decrease, while the content of N and sheet resistance of the TaNx thin-films increase, and the diffusion barrier properties of TaNx thin-films is improved. TaN1.09 can prevent interdiffusion between Cu and Si effectively after annealing up to 650 ℃ for 60 s. The failure of TaNx is mainly attributed to the formation of Cu3Si on TaN/Si interface, which results from Cu diffusion along the grain boundaries of polycrystalline TaN.
文摘Dielectric barrier discharge at atmospheric presure has been applied to prepare hydrocarbon films on large- area glass and silicon substrates. When hydrogen and methane mixture(2:1) is used as discharge gas and the substrate is heated to 300 C, hard hydrogenated amorphous carbon film is deposited. From the IR deconvolution analysis of the C-H stretching absorption for the coating, the hydrocarbon group ration (CH3:CH2:CH) and C-C bond type ratio (sp3c/sp2c) are about 10%: 21%: 69% and 3:1~6:1,respectively. Their Knoop hardness is up to 10Gpa. No film isdeposited when the content of methane in the mixed gases is decreased to 5% at 300 C silicon substrate.