Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest incr...Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest increase in complexity of fabrication process. Speed of these devices is mainly determined by transit time of minority carriers across the device. Base transit time is the most important component of the total transit time. An analytical model is developed here to predict the variation of base transit time with Ge content, base doping concentration, temperature, and other device parameters. Studies have been made for both uniform and exponential doping distributions with different Ge profiles in the base region. Band gap narrowing effect due to high doping concentration is also taken into account in the model.展开更多
The doping profile function of a double base epilayer is constructed according to drift-diffusion theory. Then an analytical model for the base transit time τb is developed assuming a small-level injection based on t...The doping profile function of a double base epilayer is constructed according to drift-diffusion theory. Then an analytical model for the base transit time τb is developed assuming a small-level injection based on the characteristics of the 4H-SiC material and the principle of the 4H-SiC BJTs. The device is numerically simulated and validated based on two-dimensional simulation models. The results show that the built-in electric field generated by the double base epilayer configuration can accelerate the carriers when transiting the base region and reduce the base transit time. From the simulation results, the base transit time reaches a minimal value when the ratio of L2/L1 is about 2.展开更多
文摘Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest increase in complexity of fabrication process. Speed of these devices is mainly determined by transit time of minority carriers across the device. Base transit time is the most important component of the total transit time. An analytical model is developed here to predict the variation of base transit time with Ge content, base doping concentration, temperature, and other device parameters. Studies have been made for both uniform and exponential doping distributions with different Ge profiles in the base region. Band gap narrowing effect due to high doping concentration is also taken into account in the model.
基金Project supported by the National Natural Science Foundation of China (No.60876061)the Pre-Research Project (No.51308040302)
文摘The doping profile function of a double base epilayer is constructed according to drift-diffusion theory. Then an analytical model for the base transit time τb is developed assuming a small-level injection based on the characteristics of the 4H-SiC material and the principle of the 4H-SiC BJTs. The device is numerically simulated and validated based on two-dimensional simulation models. The results show that the built-in electric field generated by the double base epilayer configuration can accelerate the carriers when transiting the base region and reduce the base transit time. From the simulation results, the base transit time reaches a minimal value when the ratio of L2/L1 is about 2.
