采用光学浮区法生长了层状过渡金属氧化物Bi2Sr2-x Ca x Co2O y(x=0,2)晶体。通过XRD,SEM和TEM结构表征,表明了生长的晶体为层状晶体,并确定了晶体生长的方向垂直与c轴。研究了晶体的热电性能,包括Bi2Ca2Co2O y和Bi2Sr2Co2O y晶体ab面的...采用光学浮区法生长了层状过渡金属氧化物Bi2Sr2-x Ca x Co2O y(x=0,2)晶体。通过XRD,SEM和TEM结构表征,表明了生长的晶体为层状晶体,并确定了晶体生长的方向垂直与c轴。研究了晶体的热电性能,包括Bi2Ca2Co2O y和Bi2Sr2Co2O y晶体ab面的Seeback系数和电阻率,表明了Bi2Ca2Co2O y具有较好的热电势和电导,并分析了电输运性能与晶体失配结构的关系。展开更多
High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resisti...High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,展开更多
We report a reproducible approach in preparing high-quality overdoped Bi2 Sr2 CaCu2 08＋δ （Bi2212） single crystals by annealing Bi2212 crystals in high oxygen pressure followed by a fast quenching. In this way, hig...We report a reproducible approach in preparing high-quality overdoped Bi2 Sr2 CaCu2 08＋δ （Bi2212） single crystals by annealing Bi2212 crystals in high oxygen pressure followed by a fast quenching. In this way, high-quality overdoped and heavily overdoped Bi2212 single crystals are obtained by controlling the annealing oxygen pressure. We find that, beyond a limit of oxygen pressure that can achieve most heavily overdoped Bi2212 with a Tc N63 K, the annealed Bi2212 begins to decompose. This accounts for the existence of the hole-doping limit and thus the Tc limit in the heavily overdoped region of Bi2212 by the oxygen annealing process. These results provide a reliable way in preparing high-quality overdoped and heavily overdoped Bi2212 crystals that are important for studies of the physical properties, electronic structure and superconductivity mechanism of the cuprate superconductors.展开更多
Three Bi2Sr2Co2Oy thin films with different microstructures have been prepared by chemical solution deposition on LaAlO 3（001） through varying the annealing temperature.With the decrease in the annealing temperature...Three Bi2Sr2Co2Oy thin films with different microstructures have been prepared by chemical solution deposition on LaAlO 3（001） through varying the annealing temperature.With the decrease in the annealing temperature,both the size and c-axis alignment degree of grains in the film decrease as well,leading to an increase in the film resistivity.In addition,the decrease in the annealing temperature also results in a slight increase in the Seebeck coefficient due to the enhanced energy filtering effect of the small-grain film.The nanostructured Bi2Sr2Co2Oy film with an average grain size of about 100 nm shows a power factor comparable to that of films with larger grains.Since the thermal conductivity of the nanostructured films can be depressed due to the enhanced phonon scattering by grain boundary,a higher figure of merit is expected in Bi2Sr2Co2Oy thin film with grains in nanometer size.展开更多
A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties ar...A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices.展开更多
The growth of crystals of the high T c oxide superconductors has been hampe red by the complexities of the materials and their phase diagrams.The most common crys tal growth technique adopted for these oxides is the ...The growth of crystals of the high T c oxide superconductors has been hampe red by the complexities of the materials and their phase diagrams.The most common crys tal growth technique adopted for these oxides is the “flux”method,where the st arting materials are solved in a melt,which is usually formed by excess CuO and BaO or a KCl/NaCl mixture.The crystals are produced by slow cooling of the heate d solvent.This method,however,suffers from several disadvantages: (1) the crystals are contaminated with the crucible material, (2) the crystals are difficult to remove from the crucible, (3) the crystals contain flux inclusions.展开更多
Mesa-structured submicron intrinsic Josephson junctions are successfully fabricated and well characterized on underdoped Bi2Sr2Ca1-xYxCu2O8＋δ single crystals with a Tc of 80 K. Tunneling spectra at the temperatures ...Mesa-structured submicron intrinsic Josephson junctions are successfully fabricated and well characterized on underdoped Bi2Sr2Ca1-xYxCu2O8＋δ single crystals with a Tc of 80 K. Tunneling spectra at the temperatures ranging from 4.2 K to 295 K are measured. A pulse technique is used to reduce sample heating for the measurement near pseudogap opening temperature T^＊ - 280 K. Our experimental results show that the superconducting gap, the peakdip separation, and the pseudogap opening temperature are all increased as compared with those from near optimally doped samples, which requires further theoretical analysis in the future.展开更多
文摘采用光学浮区法生长了层状过渡金属氧化物Bi2Sr2-x Ca x Co2O y(x=0,2)晶体。通过XRD,SEM和TEM结构表征,表明了生长的晶体为层状晶体,并确定了晶体生长的方向垂直与c轴。研究了晶体的热电性能,包括Bi2Ca2Co2O y和Bi2Sr2Co2O y晶体ab面的Seeback系数和电阻率,表明了Bi2Ca2Co2O y具有较好的热电势和电导,并分析了电输运性能与晶体失配结构的关系。
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 10904030)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20091301120002)
文摘High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,
基金Supported by the National Natural Science Foundation of China under Grant Nos 11190022,11334010 and 11534007the National Basic Research Program of China under Grant No 2015CB921000the Strategic Priority Research Program(B)of Chinese Academy of Sciences under Grant No XDB07020300
文摘We report a reproducible approach in preparing high-quality overdoped Bi2 Sr2 CaCu2 08＋δ （Bi2212） single crystals by annealing Bi2212 crystals in high oxygen pressure followed by a fast quenching. In this way, high-quality overdoped and heavily overdoped Bi2212 single crystals are obtained by controlling the annealing oxygen pressure. We find that, beyond a limit of oxygen pressure that can achieve most heavily overdoped Bi2212 with a Tc N63 K, the annealed Bi2212 begins to decompose. This accounts for the existence of the hole-doping limit and thus the Tc limit in the heavily overdoped region of Bi2212 by the oxygen annealing process. These results provide a reliable way in preparing high-quality overdoped and heavily overdoped Bi2212 crystals that are important for studies of the physical properties, electronic structure and superconductivity mechanism of the cuprate superconductors.
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 10904030)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20091301120002 )
文摘Three Bi2Sr2Co2Oy thin films with different microstructures have been prepared by chemical solution deposition on LaAlO 3（001） through varying the annealing temperature.With the decrease in the annealing temperature,both the size and c-axis alignment degree of grains in the film decrease as well,leading to an increase in the film resistivity.In addition,the decrease in the annealing temperature also results in a slight increase in the Seebeck coefficient due to the enhanced energy filtering effect of the small-grain film.The nanostructured Bi2Sr2Co2Oy film with an average grain size of about 100 nm shows a power factor comparable to that of films with larger grains.Since the thermal conductivity of the nanostructured films can be depressed due to the enhanced phonon scattering by grain boundary,a higher figure of merit is expected in Bi2Sr2Co2Oy thin film with grains in nanometer size.
基金Project supported by the National Basic Research Program of China (Grant No.2011CB612305)the National Natural Science Foundation of China (Grant No.51372064)+1 种基金the One Hundred Persons Project of Hebei Province of China (Grant No.CPRC001)the Science and Technology Research Project of Colleges and Universities in Hebei Province,China (Grant No.QN20131040)
文摘A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices.
文摘The growth of crystals of the high T c oxide superconductors has been hampe red by the complexities of the materials and their phase diagrams.The most common crys tal growth technique adopted for these oxides is the “flux”method,where the st arting materials are solved in a melt,which is usually formed by excess CuO and BaO or a KCl/NaCl mixture.The crystals are produced by slow cooling of the heate d solvent.This method,however,suffers from several disadvantages: (1) the crystals are contaminated with the crucible material, (2) the crystals are difficult to remove from the crucible, (3) the crystals contain flux inclusions.
基金Project supported by the National Natural Science Foundation of China(Grant No.10974242)
文摘Mesa-structured submicron intrinsic Josephson junctions are successfully fabricated and well characterized on underdoped Bi2Sr2Ca1-xYxCu2O8＋δ single crystals with a Tc of 80 K. Tunneling spectra at the temperatures ranging from 4.2 K to 295 K are measured. A pulse technique is used to reduce sample heating for the measurement near pseudogap opening temperature T^＊ - 280 K. Our experimental results show that the superconducting gap, the peakdip separation, and the pseudogap opening temperature are all increased as compared with those from near optimally doped samples, which requires further theoretical analysis in the future.
