High performance X8R dielectric ceramics were prepared by dopingBi2O3 to BaTiO3-based ceramics.The effect of small amounts（≤1.2 mol%） ofBi2O3 additive on the microstructure and dielectric properties of BaTiO3-based...High performance X8R dielectric ceramics were prepared by dopingBi2O3 to BaTiO3-based ceramics.The effect of small amounts（≤1.2 mol%） ofBi2O3 additive on the microstructure and dielectric properties of BaTiO3-based ceramics have been investigated.The Bi2O3 ,acting as a sintering additive,can effectively lower the sintering temperature of BaTiO3-based ceramics from 1300 to 1130 °C.The bulk density of BaTiO3-based ceramics increased and reached the maximum value with increasingBi2O3 content.The dielectric constant increased with increasingBi2O3 until it reached the maximum value with 0.8 mol%Bi2O3 additive,and the dielectric loss decreased with increasingBi2O3 content.Optimal dielectric properties of ε=2470,tanδ=0.011 and △ε/ε 25 ≤±9%（-55-150 °C） were obtained for the BaTiO3-based ceramics doped with 0.8 mol%Bi2O3 sintered at 1130 °C for 6 h.展开更多
The present work aimed to explore a kind of microwave dielectric materials with middle-permittivity, high Qf, near-zero τf, and lower sintering temperature. A series of Y2Ti2O7 microwave dielectric ceramics were synt...The present work aimed to explore a kind of microwave dielectric materials with middle-permittivity, high Qf, near-zero τf, and lower sintering temperature. A series of Y2Ti2O7 microwave dielectric ceramics were synthesized by conventional solid-state method. For improving the dielectric properties of Y2Ti2O7 system, Bi2O3, Nd2O3 and Nb2O5 were added and their effects on phase composition, micro-structure, and dielectric properties at microwave frequencies were investigated by means of X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The queuing score method for multi-target orthogonal design was used to obtain the optimum prescription. The results showed that the Y2Ti2O7 ceramics with 8 wt.% Bi2O3 and 1 mol.% Nd2O3-Nb2O5 were well sintered at 1350 ℃, exhibiting excellent dielectric characteristics, i.e. εr≈76, Qf≈18980 GHz, τf =＋25.5 ppm/℃.展开更多
基金supported by the Tianjin Natural Science Foundation, China (Grant No. 06YFJMJC01000)
文摘High performance X8R dielectric ceramics were prepared by dopingBi2O3 to BaTiO3-based ceramics.The effect of small amounts（≤1.2 mol%） ofBi2O3 additive on the microstructure and dielectric properties of BaTiO3-based ceramics have been investigated.The Bi2O3 ,acting as a sintering additive,can effectively lower the sintering temperature of BaTiO3-based ceramics from 1300 to 1130 °C.The bulk density of BaTiO3-based ceramics increased and reached the maximum value with increasingBi2O3 content.The dielectric constant increased with increasingBi2O3 until it reached the maximum value with 0.8 mol%Bi2O3 additive,and the dielectric loss decreased with increasingBi2O3 content.Optimal dielectric properties of ε=2470,tanδ=0.011 and △ε/ε 25 ≤±9%（-55-150 °C） were obtained for the BaTiO3-based ceramics doped with 0.8 mol%Bi2O3 sintered at 1130 °C for 6 h.
基金supported by the Key University Science Research of Jiangsu Province (08KJA430002)the Priority Academic Program D velopment of Jiangsu Higher Education Institute
文摘The present work aimed to explore a kind of microwave dielectric materials with middle-permittivity, high Qf, near-zero τf, and lower sintering temperature. A series of Y2Ti2O7 microwave dielectric ceramics were synthesized by conventional solid-state method. For improving the dielectric properties of Y2Ti2O7 system, Bi2O3, Nd2O3 and Nb2O5 were added and their effects on phase composition, micro-structure, and dielectric properties at microwave frequencies were investigated by means of X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The queuing score method for multi-target orthogonal design was used to obtain the optimum prescription. The results showed that the Y2Ti2O7 ceramics with 8 wt.% Bi2O3 and 1 mol.% Nd2O3-Nb2O5 were well sintered at 1350 ℃, exhibiting excellent dielectric characteristics, i.e. εr≈76, Qf≈18980 GHz, τf =＋25.5 ppm/℃.
