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A 2.2-V 2.9-ppm/℃BiCMOS bandgap voltage reference with full temperature-range curvature-compensation 被引量:1
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作者 周泽坤 马颖乾 +2 位作者 明鑫 张波 李肇基 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第7期91-95,共5页
A high precision high-order curvature-compensated bandgap reference compatible with the standard Bi-CMOS process,which uses a simple structure to realize a novel exponential curvature compensation in lower temperature... A high precision high-order curvature-compensated bandgap reference compatible with the standard Bi-CMOS process,which uses a simple structure to realize a novel exponential curvature compensation in lower temperature ranges,and a piecewise curvature correction in higher temperature ranges,is presented.Experiment results of the proposed bandgap reference implemented with a 0.6-μm BCD process demonstrate that a temperature coefficient of 2.9 ppm/℃is realized at a 3.6-V power supply,a power supply rejection ratio of 85 dB is achieved,and the line regulation is better than 0.318 mV/V for 2.2-5 V supply voltage dissipating a maximum supply current of 45μA.The active area of the presented bandgap reference is 260×240μm;. 展开更多
关键词 high-order curvature compensation exponential curvature compensation piecewise curvature compensation bicmos bandgap reference temperature coefficient PSRR
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