Orientation dependence on piezoresponse of lead-free piezoelectric sodium bismuth titanate epitaxial thin films

Lead-free piezoelectric sodium bismuth titanate((Bi0.5Na0.5)TiO3,BNT)thin films were epitaxially grown onto(001)-,(110)-,and(111)-oriented Nb:SrTiO3(STO)single crystal substrates prepared by sol-gel processing.Highly oriented growth in(001),(110),and(111)BNT thin films was obtained in this work benefiting from the lattice match between the BNT film and the STO substrate.The different growth models in thin films with various orientations result in various surface morphologies dependent on the film orientation.The piezoresponse of the BNT thin films was represented exhibiting a strong orientation dependence that(110)>(001)>(111).This is contributed by the various domain switching contribution related to the crystal symmetry and polarization distribution in the three oriented thin films.

Preparation,crystallization,microstructure and dielectric properties of lead bismuth titanate borosilicate glass ceramics

Various bulk and transparent glasses were prepared by rapid melt quenching technique in the glass system 55[(Pb_(x)Bi_(1-x))TiO_(3)]-44[2Si_(O)2B_(2)O_(3)]-La2O3(x=0-0.7).The X-ray diffraction(XRD)studies of the glass samples confirmed the amorphous nature.The differential thermal analyses(DTA)were carried out from room temperature to 900℃with a heating rate of 10℃/min.The DTA patterns of the samples showed one or more exothermic sharp peaks shifting towards lower temperature side with increasing concentration of bismuth oxide(BiO).On the basis of DTA results,the solid solution of bismuth titanum oxide(Bi_(2)Ti_(2)O_(7))/lead bismuth titanium oxide(Pb3Bi4Ti6O21)was precipitated in borosilicate glassy matrix as a major phase.The glasses were subjected to 4 h and 8 h heat treatment schedules to convert into glass ceramics.XRD analysis of these glass ceramic samples showed that the major crystalline phase of the entire glass ceramic samples with 0≤x≤0.5 is found to have cubic crystal structure,while it is tetragonal for glass ceramic sample with x=0.7.The scanning electron microscopy(SEM)micrographs indicated the uniform distribution of Bi_(2)Ti_(2)O_(7)and Pb3Bi4Ti6O21 crystallites in the glassy matrix.

Analyses of temperature-dependent interface states,series resistances,and AC electrical conductivities of Al/p Si and Al/Bi_4Ti_3O_(12)/p Si structures by using the admittance spectroscopy method

In this study, Al/p-Si and Al/Bi4Ti3O12/p-Si structures are fabricated and their interface states （Nss）, the values of series resistance （Rs）, and AC electrical conductivity （σac） are obtained each as a function of temperature using admit- tance spectroscopy method which includes capacitance-voltage （C-V） and conductance-voltage （G-V） measurements. In addition, the effect of interfacial Bi4Ti3012 （BTO） layer on the performance of the structure is investigated. The voltage- dependent profiles of Nss and Rs are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that Nss and Rs, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of Nss and the reordering and restructuring of Nss under the effect of temperature. The values of activation energy （Ea）, obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the Ea of the metal-ferroelectric-semiconductor （MFS） structure is found to be half that of the metal-semiconductor （MS） structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms （NA）, built-in potential （Vbi）, Fermi energy （EF）, image force barrier lowering （△φb）, and barrier height （φb）, are extracted using reverse bias C 2-V characteristics as a function of temperature.

Ferroelectric and dielectric properties of La/Mn co-doped Bi_4Ti_3O_12 ceramics

La/Mn co-doped Bi4Ti3O12 ceramics, Bi3.25La0.75Ti3-xMnxO12 （x = 0.02, 0.04, 0.06, 0.08）, were prepared by the solid-state reaction method. The influence of manganese substitution for the titanium part in Bi3.25La0.75Ti3O12 on the sintering behaviour, microstructure, Raman spectra and electrical properties was investigated. The experimental results show that the phase composition of all samples with and without manganese doping, sintered at 1000 ℃, consists of a single phase with a bismuth-layered structure belonging to the crystalline phase Bi4Ti3O12. There is no evidence of any impurity phase, but a small change in crystallographic orientation is observed. The Curie temperature of Bi3.25La0.75Ti3-xMnxO12 ceramics is steadily shifted to lower temperature with increasing Mn-doping content. Moreover, the remnant polarisation （Pr） of Bi3.25La0.75Ti3- xMnxO12 samples increases with Mn-doping content, and the Bi3.25La0.75Ti2.92Mn0.08O12 sample exhibits the largest Pr of 16.6 μC/cm^2.

Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

The ferroelectric response of bismuth titanate Bi4Ti3O12 （BIT） thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms： the electric field applied in the z direction, the nearest dipole-dipole interaction in the transversal （x-y） direction, and the nearest dipole-dipole interaction in the direction perpendicular to the thin film （the z axis）. In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response.

Effects of Processing Conditions on Hydrothermal Synthesis of K_(0.5)Bi_(0.5)TiO_3 Nano-Powders

Potassium bismuth titanate nanosized powders were prepared by the hydrothermal method using Ti(C_4H_9O)_4 and Bi(NO_3)_3·5H_2O as raw materials in alkaline solution.The phase composition,particle size and morphology of the powders were studied by XRD and TEM analysis.The results showed that the powders were well crystallized and dispersed.The crystal phase of the powders was K_(0.5)Bi_(0.5)TiO_3 with the grain size of about 50 nm～100 nm.Hydrothermal temperature and alkaline concentrations had great effects on the phase composition and morphology of the resultant powders.Pure K_(0.5)Bi_(0.5)TiO_3 powders could be synthesized at 170℃～180℃with KOH concentration of 8 mol/L～12 mol/L.

Lanthanum-doped Bi_4Ti_3O_(12) ceramics prepared by high-pressure technique

We present an effective way in this paper to increase the density of lanthanum doped bismuth titanate ceramics, Bi4-xLaxTi3O12 （BLT）, thereby significantly improving the performance of the BLT ceramics. Dense BLT ceramicses, Bi4-xLaxTi3O12 （x = 0.25, 0.5, 0.75, 1.0）, are prepared by using nanocrystalline powders fabricated by a -gel method and high-pressure technique. The microstructures of the BLT ceramicses prepared separately by conventional-pressure and high-pressure techniques are investigated by using x-ray diffraction and transmission electron microscope. The influence of La-doping on the densification of bismuth titanate ceramics is investigated. The experimental results indicate that the phase compositions of all samples with various lanthanum dopings sintered at 900℃ possess layer- structure of Bi4Ti3O12. The green compacts are pressed under 2.5 GPa, 3.0 GPa, 3.5 GPa and 4.0 GPa, separately. It is found that the density of BLT ceramics is significantly increased due to the decreasing of porosity in the green compacts by high-pressure process.

Investigation of Ceramic Based Composites by Using 2D Graphene Filler

The ceramic composites of sodium bismuth titanate with reduce graphene oxide NBT/rGO of different compositions were fabricated by solid state sintering method and characterized. In this work, the graphene oxide (GO) and reduce graphene oxide (rGO) was successfully synthesized by Hummer’s modified method which is confirmed by FTIR and XRD results. The reduce graphene oxide used as 2D filler in piezoelectric creamic material. The crystalline structure of NBT/rGO composite was confirmed by X-ray diffraction with rhombohedral symmetry. The dispersion of rGO in the ceramic can be detect by the optical microcopy images. The electrical conductivity of sodium bismuth titanate shows increase at higher values of frequency and conductivity nanocomposites of different wt% were start decreases up to certain value of frequency. The broadening of peaks in frequency explicit plots of electrical conductivity with the help of LCR Meter (Impedance Capacitance and Resistance). The crystalline size of reduced graphene oxide and NBT is calculated by Scherrer’s formula of XRD peaks.

Synthesis and Piezoelectric Properties of Lead-free (Bi_(0.5)Na_ (0.5))_ 1-x(Ba_aSr_b)_xTiO_3 Ceramics

A new group of lead-free piezoelectric ceramics,（Bi0.5 Na0.5）1-x（BaaSrb）xTiO3（abbreviated as BNBST[100x-100a/100b],0〈x〈1,a＋b=1）,was synthesized.The ceramics were prepared by conventional ceramic sintering technique,and the ceramics with density of 95% of the theoretical one can be sintered without the atmosphere control during the sintering process.The results of the X-ray diffraction（XRD） data show that the ceramics possess a single perovskite phase.The measurements of dielectric and piezoelectric properties reveal that the ceramics provide relatively high piezoelectric charge constant d33 and high planar electromechanical coupling factor kp.For the BNBST6-95/5 ceramics,d33 is equal to 170pC/N,and kp is equal to 32.0%.The fabrication technique for these ceramics is conventional and stable.

Structure and Electric Properties of (1-x)(Bi_(1/2)Na_(1/2)) TiO_3-xBaTiO_3 Systems

The structural, dielectric and piezoelectric properties of （1-x）（Bi1/2Na1/2） TiO3-xBaTiO3 ceramics were investigated for the compositional range, x=0.02, 0.04, 0.06, 0.08, 0.10. The samples were synthesized by a conventional solid-state reaction technique. All compositions show a single perovskite structure, and X-ray powder diffraction patterns can be indexed using a rhombohedral structure. Lattice constants and lattice distortion increase while the amount of BaTiO3 increases. The X-ray diffraction results show the morphotropic phase boundary （MPB） of （1-x）（Bi1/2Na12） TiO3-xBaTiO3 exists in near x=0.06-0.08. Temperature dependence of dielectric constant eT33/ε0 measurement reveals that all compositions experience one structural phase and two ferroelectric phases transition below 400℃： rhombohedral （or rhombohedral plus tetragonal） ferroelectric phase ←→ tetragonal antiferroelectric phase ←→ tetragonal paraelectric phase. Relaxor behaviors exist in the course of ferroelectric to antiferroelectric phase transition. Dielectric and piezoelectric properties are enhanced in the MPB range for （ 1-x）（Bi1/2Na1/2）TiO3-xBaTiO3.

Oxygen vacancy migration and its lattice structural origin in A-site non-stoichiometric bismuth sodium titanate perovskites

Off-stoichiometry of perovskite structural Bi0.5Na0.5TiO3(BNT)ferroelectrics can give rise to considerable oxide-ion conductivity.The inherent structural characteristics are urgent to be resolved due to its particular sensitivity of the conduction mechanism to the nominal composition and synthesis process.Herein,a thorough study of the temperature-dependent neutron,X-ray diffraction and Raman spectrum is carried out on a series of equivalently substituted A-site deficient non-stoichiometric and pristine BNT.Phase transition and defect association are systemically investigated in these dominated rhombohedral phases at room temperature,associated with well saturated ferroelectric states.Significant structural evolution identified by Rietveld refinements and the origin of the electrical performance are clarified at elevated temperatures,focusing on the subtle distortions of ionic displacements,oxygen octahedral tilts and local chemical environments for oxygen vacancies.The ion migration ability mediated by oxygen vacancies that are not energetically favorable in BNT mainly depends on the external substitutional disorder,and is strongly affected by the dopant concentration.Together with the lone pair substitution concept,superior oxide ionic conductivity is achieved,and an alternative strategy is provided in designing BNT based oxide ion conductors.

Dielectric properties of bismuth-containing pyrochlores:A comparative analysis

The comparative analysis of the dielectric properties of bismuth-containing pyrochlores with different manifestation of atomic order/disorder was carried out.We examined the dielectric properties(including behavior in electric fields)of two pyrochlore compounds:BZN(presumably a composition close to Bi_(1.5)Zn_(0.5)Nb_(1.5)O_(6.5))ceramics with chemical disorder in both A and B cation sublattices and Bi_(2)Ti_(2)O_(7)single crystal with fully chemical ordered structure.The fundamental differences between the dielectric properties of the BZN ceramics and Bi_(2)Ti_(2)O_(7)single crystal were shown.In particular,in the dielectric relaxation behavior(which cannot be described via Arrhenius law in the Bi_(2)Ti_(2)O_(7))or in the influence of the electric fields on the dielectric permittivity(split-ting of the field-cooled and zero-field-cooled behaviors was observed for Bi_(2)Ti_(2)O_(7)below estimated freezing temperature).The results of this study highlights the special role of Bi_(2)Ti_(2)O_(7)as a candidate material for studying aspects of geometric frustration related with pyrochlore structure in non-magnetic medium and specifies the future directions of research.

Construction of charge transfer chain in Bi_(12)TiO_(20)-Bi_(4)Ti_(3)O_(12)/α-Bi_(2)O_(3)composites to accelerate photogenerated charge separation

Photogenerated charge separation and transfer is one of the bottleneck steps in photocatalysis,and efficient charge separation strategies are strongly desired.Here,mimicking the electron transport chain in natural photosynthesis,we report the design and fabrication of a charge transfer chain using bismuth-based semiconductor as a proof-of-concept.In view of the thermodynamic energy band positions and structural similarity based on the density functional theory(DFT)analysis,heterostructured combination ofα-Bi_(2)O_(3),perovskite-like Bi_(4)Ti_(3)O_(12),and sillenite Bi12TiO20 was designed for fabrication of charge transfer chain.By tuning the molar ratio of Bi and Ti precursors,the Bi_(4)Ti_(3)O_(12)and Bi12TiO20 particles were formed on the surface ofα-Bi_(2)O_(3)by an insitu transformation process,giving rise to Bi_(12)TiO_(20)-Bi_(4)Ti_(3)O_(12)/α-Bi_(2)O_(3)composites with charge transfer chain.We propose that the effective charge transfer is accomplished amongα-Bi_(2)O_(3),Bi12TiO20,and Bi_(4)Ti_(3)O_(12),which significantly improves the photogenerated charge separation and transfer,as indicated by photoluminescene,time-resolved photoluminescene,and electrochemical impedance spectra results.As expected,the Bi_(12)TiO_(20)-Bi_(4)Ti_(3)O_(12)/α-Bi_(2)O_(3)shows the superior photocatalytic activity for the degradation of environmental pollutants with high concentration.Even for the refractory pollutants like 4-chlorophenol,the optimal Bi_(12)TiO_(20)-Bi_(4)Ti_(3)O_(12)/α-Bi_(2)O_(3)composite shows 28 times higher than that ofα-Bi_(2)O_(3)for photocatalytic degradation,verifying the superiority of photogenerated charge transfer chain in photocatalysis.This work demonstrates the feasibility of the charge transfer chain strategy to boost the photogenerated charge separation,which is of great significance for designing energy and environmental-related materials in heterogonous photocatalysis.

Structure and Piezoelectric Properties of Lead-Free Na_(0.5)Bi_(0.5)TiO_3 Nanofibers Synthesized by Electrospinning

Lead-free Na0.5Bi0.5TiO 3（NBT） nanofibers with the perovskite structure were prepared by the electrospinning method.The nanofibers were about 200-300 nm in diameter and up to several hundred microns in length.The crystal structures and morphologies of the nanofibers were characterized by X-ray diffraction（XRD）,Raman spectroscopy,scanning electron microscopy（SEM）,and transmission electron microscopy（TEM）.The effective piezoelectric property of individual NBT nanofiber was examined by piezoresponse force microscopy（PFM）.The NBT nanofibers crystallized in pure perovskite phase after annealing above 700℃in air and comprised a great number of fine particles with size of 60-80 nm.In addition,the electromechanical energy conversion models for NBT nanofibers were built and demonstrated high voltage output as high as several millivolts.Such a result qualifies NBT nanofibers as a promising candidate for leadfree electromechanical conversion devices.

Effect of rare earth on physical properties of Na_(0.5)Bi_(0.5)TiO_(3)system:A density functional theory investigation

Na_(0.5)(Bi_(3/4)RE_(1/4))_(0.5)TiO_(3)(RENBT,RE=Nd,Gd,Dy,and Ho)compounds were investigated in the framework of first-principles calculations using the full potential linearized augmented plane wave(FP-LAPW)method based on the spin-polarized density functional theory implemented in the WIEN2k code.Combined charge density distribution and Ti K-edge X-ray absorption spectra reveal that the RENBT compositions with high polarization values are accompanied by a higher TiO_(6)distortion,DyNBT,and NdNBT compounds.The effect of the rare-earth elements on the polarization is confirmed experimentally with the collection of the hysteresis loops.The investigation of the electronic properties of the compounds highlights the emergence of a magnetization owing to the 4f orbital effect of the rare-earth elements.Besides,the investigation of the chemical ordering shows a short-range chemical ordering for the pure composition and an increased A-site disorder for dysprosium doped NBT system.The increased disorder may speak for increased relaxor properties in the RE doped compositions.

NaNbO_(3) modulated phase transition behavior and antiferroelectric stability evolution in 0.88(Bi_(0.5)Na_(0.5))TiO_(3)-0.12BaTiO_(3) lead-free ceramics

Giant strains in(Bi_(0.5)Na_(0.5))TiO_(3) based ceramics are usually attributed to electric field induced nonpolar to polar phase transition.Whether it is an ergodic relaxor R3c/P4mm ferroelectric(FE)to long-range ordered FE phase transformation or a reversible P4bm antiferroelectric(AFE)to FE phase transition is still unclear.Herein,lead-free(0.88-x)(Bi_(0.5)Na_(0.5))TiO_(3)-0.12BaTiO_(3-x)NaNbO_(3) ceramics exhibit a compositionmodulated FE tetragonal P4mm to relaxor AFE tetragonal P4bm phase transition,in which double hysteresis loop,sprout-shaped S-E curves,near-zero quasi-static d33 together with a large volume change suggest the AFE characteristics of P4bm phase.An interesting finding is that the reversibility of fieldinduced AFE P4bm phase to FE P4mm phase transition strongly depends on the NN content,from being completely irreversible at x=0.01e0.02,to partially reversible at x=0.03e0.05,and finally to completely reversible at x=0.06e0.08.It is indicated that the variation of reversibility should be attributed to the change of relative free energy caused by decreasing the FE to AFE phase transition temperature with increasing the NN content.

Structural and Dielectric Properties of ZnO Added (Na_(1/2)Bi_(1/2))TiO_3 Ceramics

Structural and dielectric properties of polycrystalline samples of lead-free （l-x）（Nal/2Bil/2）TiO3-xZnO, prepared using a high-temperature solid-state reaction method, were investigated in the composition range of 0≤x≤0.10. Rietveld analyses of X-ray diffraction data indicated the formation of a single-phase hexagonal structure with R3c symmetry. Williamson-Hall approach was applied to estimate the apparent particle size and lattice strain of the compounds. Temperature dependence of dielectric constant showed that the addition of ZnO to （Na1/2Bi1/2）TiO3 shifted the phase transition temperature towards higher side, a property favourable for practical applications of these ceramics. Further, temperature dependent permittivity data provided low temperature coefficient of capacitance （TCC〈8%） up to 100℃. Furthermore, a decrease in the value of dielectric loss with an increase in ZnO content was observed.

Dielectric properties of amorphous Bi-Ti-O thin films

We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi-Ti-O system.Films were deposited by RF magnetron reactive co-sputtering.In the composition range of 0.5<x<0.7,amorphous Bi_(1−x)Ti_(x)O_(y) exhibits excellent dielectric properties,with a high dielectric constant,ε_(r)~53,and a dissipation factor as low as tanδ=0.007.The corresponding maximum breakdown field reaches~1.6 MV/cm,yielding a maximum stored charge per unit area of up to 8μC/cm^(2).This work demonstrates the potential of amorphous Bi-Ti-O as a high-performance thin-film dielectric material that is compatible with high-performance integrated circuits.

Effect of Bi_2 Ti_2O_7 Seeding Layer on Capacitance-voltage Properties of Bi_(3.54)Nd_(0.46)Ti_3O_(12) Films

Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si structure has been fabricated with a preferentially （111）-orientated Bi 2 Ti 2 O 7 seeding layer as a ferroelectric gate of metal-ferroelectric-insulator field effect transistor.Bi 3.54 Nd 0.46 Ti 3 O 12 and Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 films are both well-crystallized when annealed at 680℃ for 40 min,and have smooth,dense and crack-free surfaces.The width of memory window of the ferroelectric gate increases with increasing electric field applied to the Bi 3.54 Nd 0.46 Ti 3 O 12 thin films.The width of memory window of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si with seeding layer is relatively wider than that of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Si at the same bias voltage,and the counterclockwise hysteresis curve of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si is referred to as polarization type switching at different voltages.Bi 2 Ti 2 O 7 seeding layer plays an important role in alleviating the element interdiffusion between Bi 3.54 Nd 0.46 Ti 3 O 12 and Si.

Structure and dielectric properties of NBT-xBT-ST lead-free ceramics for energy storage

(0:74-x)(Na_(0.5)Bi_(0.5))TiO_(3)-xBaTiO_(3)-0.26SrTiO_(3)(x=0~0.1)(abbreviated as NBT-xBT-ST)lead-free ceramics were fabricated by a solid-state reaction method.The effect of Ba doping amount x on the structure and energy storage properties of NBT-xBT-ST ceramics were investigated.All the NBT-xBT-ST ceramics showed single perovskite structure with a pseudocubic phase.Ba doping effectively suppressed grain growth,in favor of forming small and uniform grains.The ceramics with a composition of x=0.04,an optimized energy storage density(γ=0.47 J/cm^(3))and efficiency(η=48:67%),under an applied electric field of 50 kV/cm,should be a candidate for solid-state compact pulsed power capacitor materials.