Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.

Optically induced abnormal terahertz absorption in black silicon

The absorption responses of blank silicon and black silicon（silicon with micro/nano-conical surface structures） wafers to an 808-nm continuous-wave（CW） laser are investigated at room temperature by terahertz time-domain spectroscopy. The transmission of the blank silicon shows an appreciable change, from ground state to the pump state, with amplitude varying up to 50%, while that of the black silicon（BS） with different cone sizes is observed to be more stable. Furthermore,the terahertz transmission through BS is observed to be strongly dependent on the size of the conical structure geometry.The conductivities of blank silicon and BS are extracted from the experimental data with and without pumping. The non-photo-excited conductivities increase with increasing frequency and agree well with the Lorentz model, whereas the photo-excited conductivities decrease with increasing frequency and fit well with the Drude–Smith model. Indeed, for BS, the conductivity, electron density and mobility are found to correlate closely with the size of the conical structure.This is attributed to the influence of space confinement on the carrier excitation, that is, the carriers excited at the BS conical structure surface have a stronger localization effect with a backscattering behavior in small-sized microstructures and a higher recombination rate due to increased electron interaction and collision with electrons, interfaces and grain boundaries.

Subtle Variations in Surface Properties of Black Silicon Surfaces Influence the Degree of Bactericidal Efficiency

One of the major challenges faced by the biomedical industry is the development of robust synthetic surfaces that can resist bacterial colonization. Much inspiration has been drawn recently from naturally occurring mechano-bactericidal surfaces such as the wings of cicada(Psaltoda claripennis) and dragonfly(Diplacodes bipunctata) species in fabricating their synthetic analogs. However,the bactericidal activity of nanostructured surfaces is observed in a particular range of parameters reflecting the geometry of nanostructures and surface wettability. Here,several of the nanometer-scale characteristics of black silicon(bSi) surfaces including the density and height of the nanopillars that have the potential to influence the bactericidal efficiency of these nanostructured surfaces have been investigated. The results provide important evidence that minor variations in the nanoarchitecture of substrata can substantially alter their performance as bactericidal surfaces.

Challenges in Processing Diamond Wire Cut and Black Silicon Wafers in Large-Scale Manufacturing of High Efficiency Solar Cells

Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut wafers and the abundant presence of amorphous silicon content, which are introduced from wafer manufacturing industry during sawing of multi-crystalline wafers using ultra-thin diamond wires. The industry standard texturing process for multi-crystalline wafers cannot deliver a homogeneous etched silicon surface, thereby requiring an additive compound, which acts like a surfactant in the acidic etch bath to enhance the texturing quality on diamond wire cut wafers. Black silicon wafers on the other hand require completely a different process chemistry and are normally textured using a metal catalyst assisted etching technique or by plasma reactive ion etching technique. In this paper, various challenges associated with cell processing steps using diamond wire cut and black silicon wafers along with cell electrical results using each of these wafer types are discussed.

High-dielectric loss black silicon decorated with multi-nanostructure for wide-band mid-infrared absorption

Because of the excellent light-trapping ability of black silicon,it has emerged as a versatile substrate for photothermic applications.In this paper,multi-nanostructured black silicon with wide-band mid-infrared absorption properties for application in pyroelectric detectors is reported.Black silicon is fabricated on a substrate surface masked by Ag nanoparticle arrays using single-step etching of C_(4)F_(8)and SF_(6)plasma.The low absorption of black silicon in the mid-infrared region is improved when a secondary nanostructure with Pt nanoparticles and SiO_(2)thin films is deposited on the surface of the prepared black silicon by microelectromechanical system(MEMS)processes.Electrons are scattered at particle boundary,resulting in dielectric loss to incident infrared(IR)region.Compared to single black silicon,the structure decorated with the multi-nanostructure can achieve higher infrared absorption,which is contributed to the high-dielectric loss properties of the Pt nanoparticles.Simulations and experiments show that the thickness of black silicon and number of layers of platinum particles contribute to mid-infrared absorption,with wavelength ranging from 2.5 to 20.0μm,and the absorption reaches~90%.The proposed absorber provides a promising solution for thermal detectors.

INFLUENCES OF MODIFIERS ON SURFACE PROPERTIES OF WHITE CARBON BLACK AND MECHANICAL PROPERTIES OF SILICONE RUBBER

Various of modifiers were used to modify the surface activity of white carbon black. The oil absorption, viscosity, hydrophobic rate and burning loss of white carbon black and the mechanical propertiess of silicone rubber were measured. The influences of the modifiers on the properties of white carbon black and the mechanical properties of silicone rubber were discussed.

Formation mechanism of multi-functional black silicon based on optimized deep reactive ion etching technique with SF_6/C_4F_8

This paper reports a controllable multi-functional black silicon surface with nanocone-forest structures fabricated by an optimized deep reactive ion etching(DRIE)technique using SF6/C4F8 in cyclic etching-passivation process,which is maskless,effective and controllable.The process conditions are investigated by systematically comparative experiments and core parameters have been figured out,including etching process parameters,pre-treatment,patterned silicon etching and inclined surface etching.Based on the experimental data,the formation mechanism of nanocone shape is developed,which provides a novel view for in-depth understanding of abnormal phenomena observed in the experiments under different process situations.After the optimization of the process parameters,the black silicon surfaces exhibit superhydrophobicity with tunable reflectance.Additionally,the quantitative relationship between nanocones aspect ratio and surface reflectance and static contact angle is obtained,which demonstrates that black silicon surfaces with unique functional properties(i.e.,cross-combination of reflectance and wettability)can be achieved by controlling the morphology of nanostructures.

Electrochemical behavior of insulin on pretreated carbon black electrode enhanced with silicon carbide nanostructure

We previously reported the direct electrochemical detection of insulin at bare carbon electrodes. Here a novel modified acetylene carbon black paste electrode(SiC/CB-CPE), based on the outstanding characteristics of silicon carbide nanostructure,was developed for the electrooxidation of insulin in alkaline solution and it was characterized by cyclic voltammetry(CV) and electrochemical impedance spectroscopy(EIS) in 5 mmol/L Fe(CN)63-/4- solution. It is found that silicon carbide nanostructure doped into the CB-CPE greatly facilitates the redox electrochemistry of Fe(CN)63-/4- probe and the electrochemical oxidation of insulin. The electrooxidation of insulin is a one-electron and one-proton reaction and an irreversible adsorption-controlled electrode process. The anodic oxidation current increases linearly with the concentration of insulin from 1×10-7mol/L to1.2×10-6mol/L in 0.1 mol/L Na2CO3-NaHCO3 buffer solution(pH 10.0) and the detection limit was 50 nmol/L. In addition, the SiC/CB-CPE shows good sensitivity, reproducibility, renewability and capacity of resisting disturbance.

圆珠笔笔芯脂的设计开发与性能评价

随着我国圆珠笔产能的不断提升,我国已逐渐成为世界公认的制笔大国。在国家有关部门及相关政策的大力扶持下,圆珠笔墨水和配件加工技术等阻碍我国圆珠笔行业自主化发展的技术壁垒逐步被打破,然而现阶段国内关于笔芯脂的研究仍处于起步阶段,中高端笔芯脂产品仍主要依赖于国外进口。为此,采用无机稠化剂和硅油基础油为原料,并辅以一定的改性剂增强其稳定性,研制出一款高性能笔芯脂产品,相较于国外某高端笔芯脂产品具有更好的高低温性、抗挥发性、黏温性和储存稳定性,通过装笔测试对其使用性能进行全面评价,研制的笔芯脂表现出良好的高低温稳定性、耐冲击性和书写随动性,能够全面满足圆珠笔的使用要求.

基体模量对用于柔性传感器的导电聚合物复合材料电阻黏弹性的影响

导电聚合物复合材料(CPC)被广泛用于柔性电阻式传感器的制备。然而由于聚合物基体的黏弹性,导致其电阻响应呈现松弛、滞后等黏弹性现象,这将会对制备的传感器精确表征造成不利影响,故在材料制备阶段减小电阻黏弹性对基于CPC的柔性电阻式传感器具有重要意义。选择了常用的零维炭黑(CB)及一维多壁碳纳米管(MWCNT)为导电填料,并通过在质量分数3%~7%间改变硅橡胶(SR)固化剂质量分数来调节基体模量,研究了基体模量及纳米填料维数对CPC电阻黏弹性的影响。研究结果显示,纳米填料质量分数为3%时,随着基体模量的增加,CB/SR的电阻松弛比从15%增加到34%,多壁碳纳米管/硅橡胶(MWCNT/SR)的电阻松弛比从40%增加到47%;动态循环加载下的应变灵敏度也随基体模量的增加而下降。相同固化剂质量分数即相同基体模量时,与MWCNT/SR相比,CB/SR的电阻松弛比、动态循环加载下的应变灵敏度下降程度和“肩峰”更小。因此,在制备过程中减小基体模量、使用零维导电纳米填料CB,均可减小CPC的电阻黏弹性。

Sunlight loss for femtosecond microstructured silicon with two impurity bands

Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells. Taking chalcogen as an example, we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te^0（0.307 eV） and Te＋（0.411 eV） are doped into microstructured silicon. Finally, problems needed to be resolved in analysing the relationship between conversion efficiency of the ideal four-band silicon solar cell and the position of the introduced two intermediated bands in silicon according to detailed balance theory are pointed out with great emphasis.

Modeling of the impurity-induced silicon nanocone growth by low energy helium plasma irradiation

The formation mechanism of nanocone structure on silicon(Si)surface irradiated by helium plasma has been investigated by experiments and simulations.Impurity(molybdenum)aggregated as shields on Si was found to be a key factor to form a high density of nanocone in our previous study.Here to concrete this theory,a simulation work has been developed with SURO code based on the impurity concentration measurement of the nanocones by using electron dispersive x-ray spectroscopy.The formation process of the nanocone from a flat surface was presented.The modeling structure under an inclining ion incident direction was in good agreement with the experimental result.Moreover,the redeposition effect was proposed as another important process of nanocone formation based on results from the comparison of the cone diameter and sputtering yield between cases with and without the redeposition effect.

积雪变化对东北农田黑土盐基离子及有效硅铝含量的影响

[目的]为探究冬季积雪深度变化下东北农田黑土盐基离子及有效硅铝含量的季节性变化特征。[方法]采用人工控制积雪深度的方法,通过测定除雪处理组(SR)、减雪处理组(SL)、自然积雪对照组(C)、增雪处理组(SA)的东北农田黑土环境因子(温湿度、含水率、pH、总有机碳)、盐基离子、有效硅以及活性铝,分析土壤盐基离子及有效硅铝的含量变化过程,以及两者对土壤环境因子的响应关系。[结果]积雪深度的降低使季节性雪被覆盖下黑土受到积雪的保温作用减弱,0-30 cm土壤温度及湿度(未冻水含量)显著下降,使水盐运移过程中未冻水携带的HCO_(3)^(-)含量减少,土壤平均pH受HCO _(3)^(-)含量影响分别变化-0.06,-0.04,-0.02,0.01。土壤的碱性降低,低价阳离子对高价阳离子在土壤胶体吸附电位的置换能力增强,使得交换态一价阳离子(Na^(+)、K^(+))含量升高,同时使交换态及碳酸盐态二价阳离子(Ca ^(2+)、Mg^(2+))含量降低。碳酸盐态二价阳离子与交换态Na+分别对TOC含量构成正向和负向的影响,使土壤平均总有机碳(TOC)含量随积雪深度的降低分别增长0.87,1.09,1.32,1.48 g/kg。盐基离子与土壤pH、TOC的相互影响关系使在积雪深度降低的条件下土壤pH与TOC含量降低,进而对土壤有效硅铝含量构成间接影响。TOC含量的降低削弱了土壤对低活性腐殖酸铝(Al-HA)的固持作用,pH的降低促进低活性铝向高活性交换态铝(Ex-Al)与单聚体羟基铝(Hy-Al)的转化,土壤铝毒性提升,同时促进有效硅的溶解,造成土壤硅的流失。[结论]气候变暖引起的中高纬度地区季节性积雪覆盖面积减少将影响冬季东北地区农田黑土的物质能量分布状态,并由此改变生长季节农作物的生长发育环境,研究提示为冬季东北黑土区土壤矿质元素的季节性变化过程提供了一定的科学依据。

加成型液体硅橡胶用白炭黑改性研究进展

气相法白炭黑作为一种性能优异的补强填料,在硅橡胶领域有着广泛的应用,但白炭黑在基体中的分散性不佳会影响其补强效果,一定程度上限制了其应用。介绍了白炭黑的补强机理及改性方法,并对未来白炭黑的研究方向进行了展望。

Study on Synthesis of Nanometer SiC Precursors with Sol-Gel of SiO_2-Lignin in the Pulp Black Liquor

In the process of synthesis of nanometer SiC precursors with sol-gel of SiO2 and lignin , the products of all sizes required can be controlled by the concentration of reac-t ants , pH, temperature, reaction and ageing time , and so on . The best conditions in this research are : the concentration of Na2SiO3 and organic matters are 4. 50% and 26.4% respectively, pH = 3.3 , T = 65℃ , ageing time is 30min , dried at 150 ℃ , the size of SiC precursors is about 2.0μm .

硅橡胶-炭黑导电橡胶的逾渗特性研究

以炭黑为导电相填充硅橡胶制备导电橡胶,并基于Matlab软件建立了相应体系的逾渗模型,对比研究了炭黑含量及粒径对导电橡胶体系粒子逾渗特性和导电性能的影响。结果表明,当炭黑粒径一定时,炭黑含量是影响所制导电橡胶导电性能的重要因素,当炭黑含量达到逾渗阈值,材料电阻急剧减小,炭黑粒径越小,所制材料的逾渗阈值越低。不同炭黑粒径下,导电橡胶体系的分形维数均随着炭黑含量增加而增大,并且炭黑粒径越小,体系分形维数越小,而分形维数较小的体系在逾渗状态前形成导电集团的能力更强。对比实验和数值模拟结果可知,本文构建的逾渗模型能较好地反映硅橡胶-炭黑导电橡胶中导电相的结合特性。

流化床法制备锂离子电池硅碳负极材料的研究

采用流化床法,把硅烷和乙烯混合物作为原料气相沉积在导电碳黑的表面,然后固相烧结制备了循环性能优良的锂离子电池硅碳共包覆导电碳黑负极材料。利用流化床优化了硅烷与乙烯共沉积的工艺参数,得到硅烷与乙烯的进气料比,硅烷浓度,共沉积温度和固相烧结温度,并对样品物相和微观形貌以及电化学性能进行表征。测试表明,在硅烷和乙烯进料比为2∶1,共沉积温度为500℃,固相烧结温度为800℃时,共包覆导电碳黑作为锂离子电池负极材料性能最优,其首圈充放电效率为88.19%,首圈充放电比容量达到2 205.0 mAh/g,在25圈循环后充放电比容量均在1010.0 mAh/g。

导电炭黑/硅橡胶复合材料的电阻-应变响应特性

导电聚合物复合材料(CPCs)在隔震支座的应变监测具有广阔的应用前景。本工作采用机械共混法制备了导电炭黑(CB)/甲基乙烯基硅橡胶(VMQ)复合材料,通过场发扫描电镜(SEM)分析,发现适量的CB能够均匀分散在VMQ中,形成三维隧穿导电网络,复合材料的渗流阈值为7.51wt%,传感范围大于150%,灵敏度GF大于2.87,在不同应变下多次循环中具有稳定的电阻-应变响应信号,特别是在5 000次循环中展现出优异的电阻信号稳定性,同时克服了电阻-应变响应信号中的肩峰现象。通过隧道效应理论模型分析,解释了复合材料的电阻-应变响应机理。该复合材料具有对大变形下隔震支座的应变监测的潜力。

湘鄂西下寒武统牛蹄塘组黑色页岩发育特征及沉积环境

湘鄂西地区下寒武统牛蹄塘组是我国南方页岩气勘探的重要目标。通过鄂西古城村和湘西岩屋潭2个剖面的下寒武统牛蹄塘组黑色页岩层系的岩石学特征与地球化学分析,开展了黑色页岩沉积的物源和构造背景研究,并探讨了其沉积环境。研究结果表明:(1)鄂西古城村和湘西岩屋潭2个剖面的牛蹄塘组黑色页岩沉积差异明显,古城村剖面牛蹄塘组页岩主要为泥质页岩,厚度小,底部发育少量硅质页岩;岩屋潭剖面牛蹄塘组页岩则以硅质页岩为主,厚度大,底部富集硅磷质结核及镍、钴、钒等多种金属。岩屋潭剖面的石英含量远高于古城村剖面,并且黄铁矿也更富集。(2)研究区2个剖面的黑色岩系沉积环境、物源背景与构造背景均存在明显差异。古城村剖面物源以长英质火成岩和石英质沉积岩为主,沉积于被动大陆边缘大陆架上的弱还原-弱氧化环境;岩屋潭剖面物源以长英质火成岩、石英质沉积岩和大陆拉斑玄武岩为主,并伴随热液物源的输入,沉积于被动大陆边缘大陆坡上的还原环境。(3)早寒武世,鄂西鹤峰古城村的沉积以黑色炭质页岩和灰岩为主,且有机质与硅质含量均较低,水体相对较浅,受海平面波动影响明显,为陆棚环境;湘西的沉积厚度大,有机质含量高,且由于靠近深大断裂,热液硅来源丰富,为大陆坡环境。