The effect of Tb407 on electrical behavior of the ZnO-Pr6Oll-based varistor ceramics was investigated. Microstructural analysis indicated that the addition of Tb407 decreased average grain size from 3.6 to 3.2 and inc...The effect of Tb407 on electrical behavior of the ZnO-Pr6Oll-based varistor ceramics was investigated. Microstructural analysis indicated that the addition of Tb407 decreased average grain size from 3.6 to 3.2 and increased the sintered density from 5.58 to 5.68 g/cm3. As the amount ofTb407 increased, the breakdown field increased from 9393 to 12437 V/cm and the nonlinear coefficient increased from 50 to 65. The varistor ceramics added with 0.5 mol.% in the amount of Tb407 exhibited an excellent stability by exhibiting 0. 1% in the variation rate of the breakdown field, 0% in the variation rate of the nonlinear coefficient, and 8.8% in the variation rate of the leakage current density for DC-accelerated aging stress of 0.85 E1 mA/115 ℃/24 h.展开更多
The critical electric fields of hot SF6 are calculated including both electron and ion kinetics in wide ranges of temperature and pressure, namely from 300 K up to 4000 K and 2 atmospheres up to 32 atmospheres respect...The critical electric fields of hot SF6 are calculated including both electron and ion kinetics in wide ranges of temperature and pressure, namely from 300 K up to 4000 K and 2 atmospheres up to 32 atmospheres respectively. Based on solving a multi-term electron Boltz- mann equation the calculations use improved electron-gas collision cross sections for twelve SF6 dissociation products with a particular emphasis on the electron-vibrating molecule interactions. The ion kinetics is also considered and its role on the critical field becomes non negligible as the temperature is above 2000 K. These critical fields are then used in hydrodynamics simulations which correctly predict the circuit breaker behaviours observed in the case of breaking tests.展开更多
Water mist is one of the effective candidates for halon replacement used in electrical environment fire protec-tion. Water mist additives may greatly enhance fire suppres-sion effectiveness. In electrical environment,...Water mist is one of the effective candidates for halon replacement used in electrical environment fire protec-tion. Water mist additives may greatly enhance fire suppres-sion effectiveness. In electrical environment, electrical breakdown field strength (E) is one of the important factors that control the performance of electrical equipment. In this study the variation principles of electrical breakdown field strength and the electrical characteristics of MC additives were investigated by electrode discharging experiments. Ex-perimental results showed that electrical breakdown field strength was impacted obviously by the conductive metal ions and insulated fluorocarbon surfactants in MC additives. The attenuation percentages of E in different experimental cases were described, thus providing scientific guidance for the use of water mist and MC additives in electrical fire sup-pression.展开更多
A significant number of fire-induced power disruptions are observed in several countries every year. The faults are normally phase-to-phase short circuiting or conductor-to-ground discharges at mid-span region of the ...A significant number of fire-induced power disruptions are observed in several countries every year. The faults are normally phase-to-phase short circuiting or conductor-to-ground discharges at mid-span region of the high-voltage transmission system. In any case, the wildfire plumes provide a conductive path. The electrical conductivity is due to intense heat in combustion zone of the fire which creates ion and electrons from flame inherent particulates. Increase in the ion concentration increases the electrical conductivity of the fire plume. The main purpose of this study was to measure dielectric breakdown electric field for vegetation and hydrocarbon flames. The experimental data is needed for validation of simulation schemes which are necessary for evaluation of power grid systems reliability under extreme wildfire weather conditions. In this study, hydrocarbon and vegetation fuels were ignited in a cylindrically shaped steel burner which was fitted with type-K thermocouples to measure flame temperature. The fuels consisted of dried weeping wattle (Peltophorum africanum) litter, butane gas and candle wax. Two pinned copper electrodes supported by retort stands were mounted to the burner and energized to a high voltage. This generated a strong electric field sufficient to initiate dielectric breakdown in the flames. Breakdown electric field strength (Ecrit) obtained from the experiment decreased from 10.5 to 6.9 kV/cm for the flames with temperature range of 1003 to 1410 K, respectively.展开更多
The air breakdown is easily caused by the high-power microwave, which can have two mutually orthogonal and heterophase electric field components. For this case, the electron momentum conservation equation is employed ...The air breakdown is easily caused by the high-power microwave, which can have two mutually orthogonal and heterophase electric field components. For this case, the electron momentum conservation equation is employed to deduce the electric field power and effective electric field for heating electrons. Then the formula of the electric field power is introduced into the global model to simulate the air breakdown. The breakdown prediction from the global model agrees well with the experimental data. Simulation results show that the electron temperature is sensitive to the phase difference between the two electron field components, while the latter can affect obviously the growth of the electron density at low electron temperature amplitudes. The ionization of nitrogen and oxygen induces the growth of electron density, and the density loss due to the dissociative attachment and dissociative recombination is obvious only at low electron temperatures.展开更多
A reduced surface electric field in an AlGaN/GaN high electron mobility transistor （HEMT） is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas （2-DEG） channel as an electr...A reduced surface electric field in an AlGaN/GaN high electron mobility transistor （HEMT） is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas （2-DEG） channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional sourceconnected field plates and double field plates, the HEMT with a Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, Lm, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with VGS = -5 V, Lm 1.5 m, a peak Mg doping concentration of 8×10^17 cm-3 and a drift region length of 10 m, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.展开更多
Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltag...Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltage（BV） model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator（SOI） device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field（ENDIF）,from which the reduced surface field（RESURF） condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection（HVI） line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET（nLDMOS） with MSFP is realized.The experimental breakdown voltage（BV） and specific on-resistance（R on,sp） of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.展开更多
The carbon nanotube （CNT）-based materials can be used as vacuum device cathodes. Owing to the excellent field emission properties of CNT, it has great potentials in the applications of an explosive field emission ca...The carbon nanotube （CNT）-based materials can be used as vacuum device cathodes. Owing to the excellent field emission properties of CNT, it has great potentials in the applications of an explosive field emission cathode. The falling off of CNT from the substrate, which frequently appears in experiments, restricts its application. In addition, the onset time of vacuum breakdown limits the performance of the high-power explosive-emission-cathode-based diode. In this paper, the characteristics of the CNT, electric field strength, contact resistance and the kind of substrate material are varied to study the parameter effects on the onset time of vacuum breakdown and failure mechanism of the CNT by using the finite element method.展开更多
A novel A1GaN/GaN high electron mobility transistor （HEMT） with a source-connected T-shaped field-plate （ST-FP HEMT） is proposed for the first time in this paper. The source-connected T-shaped field-plate （ST-FP...A novel A1GaN/GaN high electron mobility transistor （HEMT） with a source-connected T-shaped field-plate （ST-FP HEMT） is proposed for the first time in this paper. The source-connected T-shaped field-plate （ST-FP） is composed of a source-connected field-plate （S-FP） and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP （S-FP HEMT） shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.展开更多
文摘The effect of Tb407 on electrical behavior of the ZnO-Pr6Oll-based varistor ceramics was investigated. Microstructural analysis indicated that the addition of Tb407 decreased average grain size from 3.6 to 3.2 and increased the sintered density from 5.58 to 5.68 g/cm3. As the amount ofTb407 increased, the breakdown field increased from 9393 to 12437 V/cm and the nonlinear coefficient increased from 50 to 65. The varistor ceramics added with 0.5 mol.% in the amount of Tb407 exhibited an excellent stability by exhibiting 0. 1% in the variation rate of the breakdown field, 0% in the variation rate of the nonlinear coefficient, and 8.8% in the variation rate of the leakage current density for DC-accelerated aging stress of 0.85 E1 mA/115 ℃/24 h.
文摘The critical electric fields of hot SF6 are calculated including both electron and ion kinetics in wide ranges of temperature and pressure, namely from 300 K up to 4000 K and 2 atmospheres up to 32 atmospheres respectively. Based on solving a multi-term electron Boltz- mann equation the calculations use improved electron-gas collision cross sections for twelve SF6 dissociation products with a particular emphasis on the electron-vibrating molecule interactions. The ion kinetics is also considered and its role on the critical field becomes non negligible as the temperature is above 2000 K. These critical fields are then used in hydrodynamics simulations which correctly predict the circuit breaker behaviours observed in the case of breaking tests.
基金This work was supported by the China National Key Basic Research Special Funds(Grant No.2001CB409600)the National Natural Science Foundation of China(Grant No.50323005)the Anhui Development Fund of Person with Ability(Grant No.2003Z019).
文摘Water mist is one of the effective candidates for halon replacement used in electrical environment fire protec-tion. Water mist additives may greatly enhance fire suppres-sion effectiveness. In electrical environment, electrical breakdown field strength (E) is one of the important factors that control the performance of electrical equipment. In this study the variation principles of electrical breakdown field strength and the electrical characteristics of MC additives were investigated by electrode discharging experiments. Ex-perimental results showed that electrical breakdown field strength was impacted obviously by the conductive metal ions and insulated fluorocarbon surfactants in MC additives. The attenuation percentages of E in different experimental cases were described, thus providing scientific guidance for the use of water mist and MC additives in electrical fire sup-pression.
文摘A significant number of fire-induced power disruptions are observed in several countries every year. The faults are normally phase-to-phase short circuiting or conductor-to-ground discharges at mid-span region of the high-voltage transmission system. In any case, the wildfire plumes provide a conductive path. The electrical conductivity is due to intense heat in combustion zone of the fire which creates ion and electrons from flame inherent particulates. Increase in the ion concentration increases the electrical conductivity of the fire plume. The main purpose of this study was to measure dielectric breakdown electric field for vegetation and hydrocarbon flames. The experimental data is needed for validation of simulation schemes which are necessary for evaluation of power grid systems reliability under extreme wildfire weather conditions. In this study, hydrocarbon and vegetation fuels were ignited in a cylindrically shaped steel burner which was fitted with type-K thermocouples to measure flame temperature. The fuels consisted of dried weeping wattle (Peltophorum africanum) litter, butane gas and candle wax. Two pinned copper electrodes supported by retort stands were mounted to the burner and energized to a high voltage. This generated a strong electric field sufficient to initiate dielectric breakdown in the flames. Breakdown electric field strength (Ecrit) obtained from the experiment decreased from 10.5 to 6.9 kV/cm for the flames with temperature range of 1003 to 1410 K, respectively.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61501358,61431010,and 61627901)the Fundamental Research Funds for the Central Universities,China
文摘The air breakdown is easily caused by the high-power microwave, which can have two mutually orthogonal and heterophase electric field components. For this case, the electron momentum conservation equation is employed to deduce the electric field power and effective electric field for heating electrons. Then the formula of the electric field power is introduced into the global model to simulate the air breakdown. The breakdown prediction from the global model agrees well with the experimental data. Simulation results show that the electron temperature is sensitive to the phase difference between the two electron field components, while the latter can affect obviously the growth of the electron density at low electron temperature amplitudes. The ionization of nitrogen and oxygen induces the growth of electron density, and the density loss due to the dissociative attachment and dissociative recombination is obvious only at low electron temperatures.
文摘A reduced surface electric field in an AlGaN/GaN high electron mobility transistor （HEMT） is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas （2-DEG） channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional sourceconnected field plates and double field plates, the HEMT with a Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, Lm, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with VGS = -5 V, Lm 1.5 m, a peak Mg doping concentration of 8×10^17 cm-3 and a drift region length of 10 m, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.
基金Project supported partially by the National Natural Science Foundation of China (Grant Nos. 60906038 and 61076082)
文摘Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltage（BV） model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator（SOI） device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field（ENDIF）,from which the reduced surface field（RESURF） condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection（HVI） line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET（nLDMOS） with MSFP is realized.The experimental breakdown voltage（BV） and specific on-resistance（R on,sp） of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.
基金supported by the National Natural Science Foundation of China(Grant Nos.11305263 and 61401484)
文摘The carbon nanotube （CNT）-based materials can be used as vacuum device cathodes. Owing to the excellent field emission properties of CNT, it has great potentials in the applications of an explosive field emission cathode. The falling off of CNT from the substrate, which frequently appears in experiments, restricts its application. In addition, the onset time of vacuum breakdown limits the performance of the high-power explosive-emission-cathode-based diode. In this paper, the characteristics of the CNT, electric field strength, contact resistance and the kind of substrate material are varied to study the parameter effects on the onset time of vacuum breakdown and failure mechanism of the CNT by using the finite element method.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574112,61334002,61306017,61474091,and 61574110)the Natural Science Basic Research Plan in Shaanxi Province,China(Grant No.605119425012)
文摘A novel A1GaN/GaN high electron mobility transistor （HEMT） with a source-connected T-shaped field-plate （ST-FP HEMT） is proposed for the first time in this paper. The source-connected T-shaped field-plate （ST-FP） is composed of a source-connected field-plate （S-FP） and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP （S-FP HEMT） shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.
