期刊文献+
共找到3篇文章
< 1 >
每页显示 20 50 100
A 0.18μm CMOS dual-band low power low noise amplifier for a global navigation satellite system 被引量:1
1
作者 李兵 庄奕琪 +1 位作者 李振荣 靳刚 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第12期94-100,共7页
This paper presents a dual-band low noise amplifier for the receiver of a global navigation satellite system. The differences between single band and multi-band design methods are discussed. The relevant parameter ana... This paper presents a dual-band low noise amplifier for the receiver of a global navigation satellite system. The differences between single band and multi-band design methods are discussed. The relevant parameter analysis and the details of circuit design are presented. The test chip was implemented in a TSMC 0.18 μm 1P4M RF CMOS process. The LNA achieves a gain of 16.8 dB/18.9 dB on 1.27 GHz/1.575 GHz. The measured noise figure is around 1.5-1.7 dB on both bands. The LNA consumes less than 4.3 mA of current from a 1.8 V power supply. The measurement results show consistency with the design. And the LNA can fully satisfy the demands of the GNSS receiver. 展开更多
关键词 cmos low noise amplifier low power DUAL-BAND noise figure GPS RF frontend
原文传递
A 2.4-GHz low power dual gain low noise amplifier for ZigBee
2
作者 高佩君 闵昊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第7期109-113,共5页
This paper presents a fully differential dual gain low noise amplifier(DGLNA) for low power 2.45-GHz ZigBee/IEEE 802.15.4 applications.The effect of input parasitics on the inductively degenerated cascode LNA is ana... This paper presents a fully differential dual gain low noise amplifier(DGLNA) for low power 2.45-GHz ZigBee/IEEE 802.15.4 applications.The effect of input parasitics on the inductively degenerated cascode LNA is analyzed.Circuit design details within the guidelines of the analysis are presented.The chip was implemented in SMIC 0.18-μm 1P6M RF/mixed signal CMOS process.The DGLNA achieves a maximum gain of 8 dB and a minimum gain of 1 dB with good input return loss.In high gain mode, the measured noise figure(NF) is 2.3-3 dB in the whole 2.45-GHz ISM band.The measured 1-dB compression point, IIP3 and IIP2 is-9, 1 and 33 dBm, respectively.The DGLNA consumes 2 mA of current from a 1.8 V power supply. 展开更多
关键词 cmos low noise amplifier input parasitics low power noise figure ZIGBEE IEEE 802.15.4
原文传递
A low-noise widely tunable Gm-C filter with frequency calibration
3
作者 王彧 刘静 +1 位作者 闫娜 闵昊 《Journal of Semiconductors》 EI CAS CSCD 2016年第9期88-95,共8页
A fourth-order Gm-C Chebyshev low-pass filter is presented as channel selection filter for reconfigurable multi-mode wireless receivers. Low-noise technologies are proposed in optimizing the noise characteristics of b... A fourth-order Gm-C Chebyshev low-pass filter is presented as channel selection filter for reconfigurable multi-mode wireless receivers. Low-noise technologies are proposed in optimizing the noise characteristics of both the Gm cells and the filter topology. A frequency tuning strategy is used by tuning both the transconductance of the Gm cells and the capacitance of the capacitor banks. To achieve accurate cut-off frequencies, an on-chip calibration circuit is presented to compensate for the frequency inaccuracy introduced by process variation. The filter is fabricated in a 0.13 m CMOS process. It exhibits a wide programmable bandwidth from 322.5 k Hz to20 MHz. Measured results show that the filter has low input referred noise of 5.9 n V/(Hz)^(1/2) and high out-of-band IIP3 of 16.2 d Bm. It consumes 4.2 and 9.5 m W from a 1 V power supply at its lowest and highest cut-off frequencies respectively. 展开更多
关键词 Gm-C filter cmos technology operational transconductance amplifier low noise frequency calibration
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部