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High voltage generator circuit with low power and high efficiency applied in EEPROM 被引量:1
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作者 刘彦 张世林 赵毅强 《Journal of Semiconductors》 EI CAS CSCD 2012年第6期79-83,共5页
This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory(EEPROM).The low power is minimized by a capacitance divider circuit ... This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory(EEPROM).The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage(V_(th)) MOSFET and the charge transfer switch(CTS) charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48μW and a higher pumping efficiency(83.3%) than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation. 展开更多
关键词 cts charge pump high efficiency high voltage generator circuit low power EEPROM oscillation zero V_(th)
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