Photoluminescence （PL） spectroscopy and photoreflectance （PR） spectroscopy are very useful techniques for studying the properties of materials. In this paper, the same material of Cu-rich metal-organic vapour phas...Photoluminescence （PL） spectroscopy and photoreflectance （PR） spectroscopy are very useful techniques for studying the properties of materials. In this paper, the same material of Cu-rich metal-organic vapour phase epitaxy （MOVPE） grown CuGaSe2 layer is investigated in a temperature range from 20 to 300 K to compare these two techniques. Both PL and PR spectra appear red shifted, less intense and broadened. The temperature dependence of interband transitions is studied by using the Manoogian Leclerc equation. The values of the band gap energy at T=0K and the effective phonon temperature are estimated. The temperature dependences of intensities and broadenings of PL and PR spectral lines are also analysed. Based on the results of the comparison, the features and applications of the PL and PR can be shown in detail.展开更多
Composition dependence of quaternary CuIn1-x GaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm^-1 for CuInSe2 to 185cm^-1 for CuGaSe2 in an app...Composition dependence of quaternary CuIn1-x GaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm^-1 for CuInSe2 to 185cm^-1 for CuGaSe2 in an approximately polynomial curve other than a linear curve, indicating existence of asymmetric distribution of Ga and In on a microscopic scale in films. With Ga content x 〉 0.3, the significantly broadening and intensity decrease of A1 modes suggest the degradation of crystalline quality of chalcopyrite phase. Additionally, the quenching of additional Raman band at 183cm^-1 for the Ga-rich films reveals that CuAu-ordered phase can coexist in nominal chalcopyrite CuInSe2 films but not in CuGaSe2, due to Ga inhibition effect.展开更多
Polycrystalline CuGaSe2 thin films on Mo-coated soda-lime glass substrates have been synthesized by coevaporation process from Cu, Ga and Se sources. Structural and electrical properties of the as-grown CuGaSe2 films ...Polycrystalline CuGaSe2 thin films on Mo-coated soda-lime glass substrates have been synthesized by coevaporation process from Cu, Ga and Se sources. Structural and electrical properties of the as-grown CuGaSe2 films strongly depend on the film composition. Stoichiometric CuGaSe2 is fabricated, as indicated by x-ray diffraction spectroscope （XRD） and x-ray fluorescence （XRF）. A two-phase region is composed of CuGaSe2 and Cu2-xSe phases for Cu-rich films, and CuGaSe2 and CuGa3Se5 phases for Ga-rich films, respectively. Morphological properties are detected by scanning electron microscope （SEM） for various compositional films, the grain sizes of the CuGaSe2films decrease with the extent of deviation from stoichiometric composition. Raman spectroscopy of Cu-rich samples shows that there exist large Cu-Se particles on the film surface. The results from Hall effect measurements for typical samples indicate that CuGaSe2 films are always of p-type semiconductor from Cu-rich to Ga-rich. Stoichiometric CuGaSe2 films exhibit relatively large mobility than any other compositional films. Finally, polycrystalline CuGaSe2 thin film solar cell with a best conversion efficiency of 6.02% has been achieved under the standard air mass （AM）1.5 spectrum for 100mW/cm^2 at room temperature （aperture area, 0.24cm^2）. The open circuit voltage of the CuGaSe2 solar cells is close to770 mV.展开更多
Ternary Ⅰ–Ⅲ–Ⅵquantum dots（QDs） of chalcopyrite semiconductors exhibit excellent optical properties in solar cells. In this study, ternary chalcopyrite CuGaS2nanocrystals（2–5 nm） were one-pot anchored on TiO2...Ternary Ⅰ–Ⅲ–Ⅵquantum dots（QDs） of chalcopyrite semiconductors exhibit excellent optical properties in solar cells. In this study, ternary chalcopyrite CuGaS2nanocrystals（2–5 nm） were one-pot anchored on TiO2nanoparticles（TiO2@CGS） without any long ligand. The solar cell with TiO2@CuGaS2/N719 has a power conversion efficiency of7.4%, which is 23% higher than that of monosensitized dye solar cell. Anchoring CuGaS2 QDs on semiconductor nanoparticles to form QDs/dye co-sensitized solar cells is a promising and feasible approach to enhance light absorption,charge carrier generation as well as to facilitate electron injection comparing to conventional mono-dye sensitized solar cells.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos 50405025 and 50535030)the Program for New Century Excellent Talents in University
文摘Photoluminescence （PL） spectroscopy and photoreflectance （PR） spectroscopy are very useful techniques for studying the properties of materials. In this paper, the same material of Cu-rich metal-organic vapour phase epitaxy （MOVPE） grown CuGaSe2 layer is investigated in a temperature range from 20 to 300 K to compare these two techniques. Both PL and PR spectra appear red shifted, less intense and broadened. The temperature dependence of interband transitions is studied by using the Manoogian Leclerc equation. The values of the band gap energy at T=0K and the effective phonon temperature are estimated. The temperature dependences of intensities and broadenings of PL and PR spectral lines are also analysed. Based on the results of the comparison, the features and applications of the PL and PR can be shown in detail.
基金Supported by China Postdoctoral Science Foundation under Grant No 2005037539, and the National High Technology Programme of China under Grant No 2004AA513020.
文摘Composition dependence of quaternary CuIn1-x GaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm^-1 for CuInSe2 to 185cm^-1 for CuGaSe2 in an approximately polynomial curve other than a linear curve, indicating existence of asymmetric distribution of Ga and In on a microscopic scale in films. With Ga content x 〉 0.3, the significantly broadening and intensity decrease of A1 modes suggest the degradation of crystalline quality of chalcopyrite phase. Additionally, the quenching of additional Raman band at 183cm^-1 for the Ga-rich films reveals that CuAu-ordered phase can coexist in nominal chalcopyrite CuInSe2 films but not in CuGaSe2, due to Ga inhibition effect.
基金Project supported by the National High Technology Joint Research Program of China (Grant No 2004AA513020)
文摘Polycrystalline CuGaSe2 thin films on Mo-coated soda-lime glass substrates have been synthesized by coevaporation process from Cu, Ga and Se sources. Structural and electrical properties of the as-grown CuGaSe2 films strongly depend on the film composition. Stoichiometric CuGaSe2 is fabricated, as indicated by x-ray diffraction spectroscope （XRD） and x-ray fluorescence （XRF）. A two-phase region is composed of CuGaSe2 and Cu2-xSe phases for Cu-rich films, and CuGaSe2 and CuGa3Se5 phases for Ga-rich films, respectively. Morphological properties are detected by scanning electron microscope （SEM） for various compositional films, the grain sizes of the CuGaSe2films decrease with the extent of deviation from stoichiometric composition. Raman spectroscopy of Cu-rich samples shows that there exist large Cu-Se particles on the film surface. The results from Hall effect measurements for typical samples indicate that CuGaSe2 films are always of p-type semiconductor from Cu-rich to Ga-rich. Stoichiometric CuGaSe2 films exhibit relatively large mobility than any other compositional films. Finally, polycrystalline CuGaSe2 thin film solar cell with a best conversion efficiency of 6.02% has been achieved under the standard air mass （AM）1.5 spectrum for 100mW/cm^2 at room temperature （aperture area, 0.24cm^2）. The open circuit voltage of the CuGaSe2 solar cells is close to770 mV.
基金the financial support from the National Key Research and Development Program of China(2016YFA0201001)the National Natural Science Foundation of China(11627801,51102172 and 11772207)+7 种基金Science and Technology Plan of Shenzhen City(JCYJ20160331191436180)the Leading Talents of Guangdong Province Program(2016LJ06C372)the Natural ScienceFoundation for Outstanding Young Researcher in Hebei Province(E2016210093)the Key Program of Educational Commission of Hebei Province of China(ZD2016022)the Youth Top-notch Talents Supporting Plan of Hebei Provincethe Graduate Innovation Foundation of Shijiazhuang Tiedao UniversityHebei Provincial Key Laboratory of Traffic Engineering materialsHebei Key Discipline Construction Project
文摘Ternary Ⅰ–Ⅲ–Ⅵquantum dots（QDs） of chalcopyrite semiconductors exhibit excellent optical properties in solar cells. In this study, ternary chalcopyrite CuGaS2nanocrystals（2–5 nm） were one-pot anchored on TiO2nanoparticles（TiO2@CGS） without any long ligand. The solar cell with TiO2@CuGaS2/N719 has a power conversion efficiency of7.4%, which is 23% higher than that of monosensitized dye solar cell. Anchoring CuGaS2 QDs on semiconductor nanoparticles to form QDs/dye co-sensitized solar cells is a promising and feasible approach to enhance light absorption,charge carrier generation as well as to facilitate electron injection comparing to conventional mono-dye sensitized solar cells.
