Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition （CVD） method with vapour-solid （VS） mechanism.Tin powders are used to...Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition （CVD） method with vapour-solid （VS） mechanism.Tin powders are used to control oxygen concentration in the furnace,thereby assisting the growth of the tungsten oxide nanowires.The grown tungsten oxide nanowires are determined to be of crystalline W18O49. I-V curves are measured by an in situ transmission electron microscope （TEM） to investigate the electrical properties of the nanowires.All of the I-V curves observed are symmetric,which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I-V curves by using a metal semiconductor-metal （MSM） model give some intrinsic parameters of the tungsten oxide nanowires,such as the carrier concentration,the carrier mobility and the conductivity.展开更多
穿透硅通孔(Through Si via interconnect)是3D IC集成中的一种重要工艺。钨化学气相淀积在半导体工业中被广泛应用,其在接触孔/通孔填充中出色的台阶覆盖能力。但采用其作为填充金属时,会产生巨大的拉应力(tensile stress)。这是一种...穿透硅通孔(Through Si via interconnect)是3D IC集成中的一种重要工艺。钨化学气相淀积在半导体工业中被广泛应用,其在接触孔/通孔填充中出色的台阶覆盖能力。但采用其作为填充金属时,会产生巨大的拉应力(tensile stress)。这是一种钨淀积与刻蚀在同一反应腔内连续作业的填充高深宽比硅通孔工艺的方法。主要研究了反应腔压力、喷淋头与基座之间的距离、氩气流量主要工艺参数对钨刻蚀工艺的影响,最终获得了一种深硅通孔无缝填充的稳定工艺。展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No 50671053)
文摘Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition （CVD） method with vapour-solid （VS） mechanism.Tin powders are used to control oxygen concentration in the furnace,thereby assisting the growth of the tungsten oxide nanowires.The grown tungsten oxide nanowires are determined to be of crystalline W18O49. I-V curves are measured by an in situ transmission electron microscope （TEM） to investigate the electrical properties of the nanowires.All of the I-V curves observed are symmetric,which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I-V curves by using a metal semiconductor-metal （MSM） model give some intrinsic parameters of the tungsten oxide nanowires,such as the carrier concentration,the carrier mobility and the conductivity.
文摘穿透硅通孔(Through Si via interconnect)是3D IC集成中的一种重要工艺。钨化学气相淀积在半导体工业中被广泛应用,其在接触孔/通孔填充中出色的台阶覆盖能力。但采用其作为填充金属时,会产生巨大的拉应力(tensile stress)。这是一种钨淀积与刻蚀在同一反应腔内连续作业的填充高深宽比硅通孔工艺的方法。主要研究了反应腔压力、喷淋头与基座之间的距离、氩气流量主要工艺参数对钨刻蚀工艺的影响,最终获得了一种深硅通孔无缝填充的稳定工艺。
