KH2PO4 （KDP） crystal with excellent optical properties is a very important element of inertial confinement fusion （ICF） device. However, KDP crystal surface micro-defects severely reduce the crystal laser damage t...KH2PO4 （KDP） crystal with excellent optical properties is a very important element of inertial confinement fusion （ICF） device. However, KDP crystal surface micro-defects severely reduce the crystal laser damage threshold, affecting the crystal service life. In this paper, Gaussian repaired pit is used to replace the crystal surface micro-defects, in order to improve the laser damage resistance of the KDP crystal with surface micro-defects. At first, the physical model of Gaussian repaired pit is built by Fourier model method, and the accuracy of the method is analyzed. It is found that the calculation error can be reduced by increasing the product of the width-period ratio and the truncation constant of the repaired pit. The calculation results about the physical model of Gaussian repaired pit show that the light intensity distribution within the crystal is symmetrical, and there are evidently enhanced light intensity regions in the crystal. Meanwhile, the maximum relative intensity inside the KDP crystal decreases gradually with the increase of the width of the Gaussian repaired pit. Secondly, the Gaussian repaired pits with different widths and the same depth of 20 μm are processed by micro-milling. Their surfaces are very smooth and present the ductile cutting state under the microscope. Finally, the laser damage threshold of the Gaussian repaired pits on the surface of the KDP crystal sample is measured by a 3 ω, 6-ns laser. The results showthat the maximum threshold of the Gaussian repaired pits is 3.12 J/cm2, which is 60% higher than the threshold of initial damage point, and the laser damage threshold increases with the increase of the width of the Gaussian repaired pit.展开更多
The KH2PO4 crystal is a key component in optical systems of inertial confinement fusion （ICF）. The microwaviness on a KH2PO4 crystal surface is strongly related to its damage threshold which is a key parameter for a...The KH2PO4 crystal is a key component in optical systems of inertial confinement fusion （ICF）. The microwaviness on a KH2PO4 crystal surface is strongly related to its damage threshold which is a key parameter for application. To study the laser induced damage mechanism caused by microwaviness, in this paper the near-field modulation properties of microwaviness to the incident wave are discussed by the Fourier modal method. Research results indicate that the microwaviness on the machined surface will distort the incident wave and thus lead to non-uniform distribution of the light intensity inside the crystal; in a common range of microwaviness amplitude, the light intensity modulation degree increases about 0.03 whenever the microwaviness amplitude increases 10 nm; 1 order diffraction efficiencies are the key factors responsible for light intensity modulation inside the crystal; the light intensity modulation is just around the microwaviness in the form of an evanescent wave, not inside the crystal when the microwaviness period is below 0.712μm; light intensity modulation degree has two extreme points in microwaviness periods of 1.064μm and 1.6μm, remains unchanged between periods of 3μm and 150μm, and descends above the period of 150μm to 920μm.展开更多
基金Project support by the National Natural Science Foundation of China(Grant No.51275113)the National Science and Technology Major Project of China(Grant No.2013ZX04006011-215)
文摘KH2PO4 （KDP） crystal with excellent optical properties is a very important element of inertial confinement fusion （ICF） device. However, KDP crystal surface micro-defects severely reduce the crystal laser damage threshold, affecting the crystal service life. In this paper, Gaussian repaired pit is used to replace the crystal surface micro-defects, in order to improve the laser damage resistance of the KDP crystal with surface micro-defects. At first, the physical model of Gaussian repaired pit is built by Fourier model method, and the accuracy of the method is analyzed. It is found that the calculation error can be reduced by increasing the product of the width-period ratio and the truncation constant of the repaired pit. The calculation results about the physical model of Gaussian repaired pit show that the light intensity distribution within the crystal is symmetrical, and there are evidently enhanced light intensity regions in the crystal. Meanwhile, the maximum relative intensity inside the KDP crystal decreases gradually with the increase of the width of the Gaussian repaired pit. Secondly, the Gaussian repaired pits with different widths and the same depth of 20 μm are processed by micro-milling. Their surfaces are very smooth and present the ductile cutting state under the microscope. Finally, the laser damage threshold of the Gaussian repaired pits on the surface of the KDP crystal sample is measured by a 3 ω, 6-ns laser. The results showthat the maximum threshold of the Gaussian repaired pits is 3.12 J/cm2, which is 60% higher than the threshold of initial damage point, and the laser damage threshold increases with the increase of the width of the Gaussian repaired pit.
基金Project supported by the National Natural Science Foundation of China (Grant No.50875066)the National High Technology Research and Development Program of China (Grant No.2009AA044305)
文摘The KH2PO4 crystal is a key component in optical systems of inertial confinement fusion （ICF）. The microwaviness on a KH2PO4 crystal surface is strongly related to its damage threshold which is a key parameter for application. To study the laser induced damage mechanism caused by microwaviness, in this paper the near-field modulation properties of microwaviness to the incident wave are discussed by the Fourier modal method. Research results indicate that the microwaviness on the machined surface will distort the incident wave and thus lead to non-uniform distribution of the light intensity inside the crystal; in a common range of microwaviness amplitude, the light intensity modulation degree increases about 0.03 whenever the microwaviness amplitude increases 10 nm; 1 order diffraction efficiencies are the key factors responsible for light intensity modulation inside the crystal; the light intensity modulation is just around the microwaviness in the form of an evanescent wave, not inside the crystal when the microwaviness period is below 0.712μm; light intensity modulation degree has two extreme points in microwaviness periods of 1.064μm and 1.6μm, remains unchanged between periods of 3μm and 150μm, and descends above the period of 150μm to 920μm.
