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Energy Recovery Capacitance Coupling Logic and Its Synthesis Methodology
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作者 杨骞 周润德 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第7期1334-1339,共6页
A novel energy recovery logic style ERCCL (energy recovery capacitance coupling logic) , which has good energy performance compared to the conventional CMOS logic and other advanced energy recovery logic, is propose... A novel energy recovery logic style ERCCL (energy recovery capacitance coupling logic) , which has good energy performance compared to the conventional CMOS logic and other advanced energy recovery logic, is proposed. ERCCL uses capacitance coupling to perform a logic function, so it can energy-efficiently implement a high fan-in complex logic in a single gate. ERCCL is also a type of threshold logic. The gate count of a system based on ERCCL can be significantly reduced,which,in turn,will decrease the energy loss. A threshold logic synthesis methodology for ERCCL is also presented. MCNC benchmarks are run through the proposed synthesis methodology. The results indicate that about an 80% reduction in gate count can be obtained when compared with the synthesis results of SIS. 展开更多
关键词 energy recovery threshold logic logic synthesis capacitance coupling CMOS circuits
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Engineering Model for Detecting Sensitivity of the Coupling Capacitance Detector 被引量:2
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作者 王伟 邓甲昊 +1 位作者 尹君 黄艳 《Journal of Beijing Institute of Technology》 EI CAS 2004年第1期54-57,共4页
The sensitivity engineering model of the coupling capacitance detector is built to provide the theoretic foundation for designing its circuits and electrodes scientifically. The sensitivity concept model of the capaci... The sensitivity engineering model of the coupling capacitance detector is built to provide the theoretic foundation for designing its circuits and electrodes scientifically. The sensitivity concept model of the capacitance proximity detector is discussed, and the detecting sensitivity of the coupling capacitance detector is analyzed theoretically. Then the sensitivity engineering model, which can reflect the main parameters relationship of the detecting circuit is set up based on the foregoing analyses. It is concluded that: ① the sensitivity is mainly correlative with some parameters including the voltage transmission factor of the demodulator, the oscillating voltage amplitude and the amplitude variation constant of the oscillator; ② the sensitivity is also influenced by the areas of electrodes and the distance between electrodes of the detector. 展开更多
关键词 proximity detector coupling capacitance detector sensitivity engineering model
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Capacitive coupling induced Kondo–Fano interference in side-coupled double quantum dots 被引量:1
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作者 Fu-Li Sun Yuan-Dong Wang +1 位作者 Jian-Hua Wei Yi-Jing Yan 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第6期426-435,共10页
We report capacitive coupling induced Kondo–Fano(K–F) interference in a double quantum dot(DQD) by systematically investigating its low-temperature properties on the basis of hierarchical equations of motion evaluat... We report capacitive coupling induced Kondo–Fano(K–F) interference in a double quantum dot(DQD) by systematically investigating its low-temperature properties on the basis of hierarchical equations of motion evaluations. We show that the interdot capacitive coupling U12 splits the singly-occupied(S-O) state in quantum dot 1(QD1) into three quasi-particle substates: the unshifted S-O0 substate, and elevated S-O1 and S-O2. As U12 increases, S-O2 and S-O1 successively cross through the Kondo resonance state at the Fermi level(ω = 0), resulting in the so-called Kondo-I(KI), K–F, and Kondo-II(KII) regimes. While both the KI and KII regimes have the conventional Kondo resonance properties, remarkable Kondo–Fano interference features are shown in the K–F regime. In the view of scattering, we propose that the phase shift η(ω)is suitable for analysis of the Kondo–Fano interference. We present a general approach for calculating η(ω) and applying it to the DQD in the K–F regime where the two maxima of η(ω = 0) characterize the interferences between the Kondo resonance state and S-O2 and S-O1 substates, respectively. 展开更多
关键词 Kondo effect Fano effect quantum dot capacitive coupling
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Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal-oxide-semiconductor field-effect transistors
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作者 徐雁冰 杨红官 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第12期469-474,共6页
An improved method of extracting the coupling capacitances of quantum dot structure is reported. This method is based on measuring the charge transfer current in the silicon nanowire metal-oxide-semiconductor field-ef... An improved method of extracting the coupling capacitances of quantum dot structure is reported. This method is based on measuring the charge transfer current in the silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET), in which the channel closing and opening are controlled by applying alternating-current biases with a half period phase shift to the dual lower gates. The capacitances around the dot, including fringing capacitances and barrier capacitances, are obtained by analyzing the relation between the transfer current and the applied voltage. This technique could be used to extract the capacitance parameters not only from the bulk silicon devices, but also from the silicon-on-insulator (SOI) MOSFETs. 展开更多
关键词 nanowire MOSFETs coupling capacitance fringing capacitance quantum dot
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A New Configuration for Planar Magnetic Elements to Reduce Capacitive Couplings
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作者 N. Shahabi A.A Boora F. Zare G. Ledwich A. Ghosh 《Journal of Energy and Power Engineering》 2011年第10期966-971,共6页
This paper presents an analysis of planar magnetic element configurations in order to reduce capacitive couplings between the windings. The capacitive couplings between layers of planar magnetic elements introduce a s... This paper presents an analysis of planar magnetic element configurations in order to reduce capacitive couplings between the windings. The capacitive couplings between layers of planar magnetic elements introduce a stray capacitor which can conduct high frequency currents when high dv/dt voltage is applied. High frequency current may cause electromagnetic interference (EMI) and harmonic problems. The investigation and simulation results, both 2D and 3D Finite Element (FE) show the effect of shifting the planar layers in reduction of the capacitive couplings. The simulation results are compared with test results to validate the proposition. 展开更多
关键词 Planar magnetic elements capacitive coupling finite element.
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Customized modulation on plasma uniformity by non-uniform magnetic field in capacitively coupled plasma
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作者 王森 张权治 +2 位作者 马方方 Maksudbek YUSUPOV 王友年 《Plasma Science and Technology》 SCIE EI CAS CSCD 2024年第6期79-87,共9页
A two-dimensional fluid model based on COMSOL Multiphysics is developed to investigate the modulation of static magnetic field on plasma homogeneity in a capacitively coupled plasma(CCP)chamber. To generate a static m... A two-dimensional fluid model based on COMSOL Multiphysics is developed to investigate the modulation of static magnetic field on plasma homogeneity in a capacitively coupled plasma(CCP)chamber. To generate a static magnetic field, direct current is applied to a circular coil located at the top of the chamber. By adjusting the magnetic field's configuration, which is done by altering the coil current and position, both the plasma uniformity and density can be significantly modulated. In the absence of the magnetic field, the plasma density exhibits an inhomogeneous distribution characterized by higher values at the plasma edge and lower values at the center. The introduction of a magnetic field generated by coils results in a significant increase in electron density near the coils. Furthermore, an increase in the sets of coils improves the uniformity of the plasma. By flexibly adjusting the positions of the coils and the applied current,a substantial enhancement in overall uniformity can be achieved. These findings demonstrate the feasibility of using this method for achieving uniform plasma densities in industrial applications. 展开更多
关键词 COMSOL capacitively coupled plasma plasma uniformity magnetic field
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Abnormal transition of the electron energy distribution with excitation of the second harmonic in low-pressure radio-frequency capacitively coupled plasmas
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作者 余乐怡 陆文琪 张丽娜 《Plasma Science and Technology》 SCIE EI CAS CSCD 2024年第8期58-63,共6页
The self-excited second harmonic in radio-frequency capacitively coupled plasma was significantly enhanced by adjusting the external variable capacitor.At a lower pressure of 3 Pa,the excitation of the second harmonic... The self-excited second harmonic in radio-frequency capacitively coupled plasma was significantly enhanced by adjusting the external variable capacitor.At a lower pressure of 3 Pa,the excitation of the second harmonic caused an abnormal transition of the electron energy probability function,resulting in abrupt changes in the electron density and temperature.Such changes in the electron energy probability function as well as the electron density and temperature were not observed at the higher pressure of 16 Pa under similar harmonic changes.The phenomena are related to the influence of the second harmonic on stochastic heating,which is determined by both amplitude and the relative phase of the harmonics.The results suggest that the self-excited high-order harmonics must be considered in practical applications of lowpressure radio-frequency capacitively coupled plasmas. 展开更多
关键词 RADIO-FREQUENCY capacitively coupled plasma HARMONICS the electron energy probability function
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Plasma density enhancement in radio-frequency hollow electrode discharge
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作者 贺柳良 何锋 欧阳吉庭 《Plasma Science and Technology》 SCIE EI CAS CSCD 2024年第4期44-51,共8页
The plasma density enhancement outside hollow electrodes in capacitively coupled radio-frequency(RF) discharges is investigated by a two-dimensional(2D) particle-in-cell/Monte-Carlo collision(PIC/MCC) model. Results s... The plasma density enhancement outside hollow electrodes in capacitively coupled radio-frequency(RF) discharges is investigated by a two-dimensional(2D) particle-in-cell/Monte-Carlo collision(PIC/MCC) model. Results show that plasma exists inside the cavity when the sheath inside the hollow electrode hole is fully collapsed, which is an essential condition for the plasma density enhancement outside hollow electrodes. In addition, the existence of the electron density peak at the orifice is generated via the hollow cathode effect(HCE), which plays an important role in the density enhancement. It is also found that the radial width of bulk plasma at the orifice affects the magnitude of the density enhancement, and narrow radial plasma bulk width at the orifice is not beneficial to obtain high-density plasma outside hollow electrodes.Higher electron density at the orifice, combined with larger radial plasma bulk width at the orifice,causes higher electron density outside hollow electrodes. The results also imply that the HCE strength inside the cavity cannot be determined by the magnitude of the electron density outside hollow electrodes. 展开更多
关键词 RF capacitively coupled plasma sources plasma density enhancement hollow cathodeeffect hollow electrode
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Effect of a negative DC bias on a capacitively coupled Ar plasma operated at different radiofrequency voltages and gas pressures
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作者 相垚君 王晓坤 +1 位作者 刘永新 王友年 《Plasma Science and Technology》 SCIE EI CAS CSCD 2024年第5期62-71,共10页
The effect of a negative DC bias,|V_(dc)|,on the electrical parameters and discharge mode is investigated experimentally in a radiofrequency(RF)capacitively coupled Ar plasma operated at different RF voltage amplitude... The effect of a negative DC bias,|V_(dc)|,on the electrical parameters and discharge mode is investigated experimentally in a radiofrequency(RF)capacitively coupled Ar plasma operated at different RF voltage amplitudes and gas pressures.The electron density is measured using a hairpin probe and the spatio-temporal distribution of the electron-impact excitation rate is determined by phase-resolved optical emission spectroscopy.The electrical parameters are obtained based on the waveforms of the electrode voltage and plasma current measured by a voltage probe and a current probe.It was found that at a low|V_(dc)|,i.e.inα-mode,the electron density and RF current decline with increasing|V_(dc)|;meanwhile,the plasma impedance becomes more capacitive due to a widened sheath.Therefore,RF power deposition is suppressed.When|V_(dc)|exceeds a certain value,the plasma changes toα–γhybrid mode(or the discharge becomes dominated by theγ-mode),manifesting a drastically growing electron density and a moderately increasing RF current.Meanwhile,the plasma impedance becomes more resistive,so RF power deposition is enhanced with|V_(dc)|.We also found that the electrical parameters show similar dependence on|V_(dc)|at different RF voltages,andα–γmode transition occurs at a lower|V_(dc)|at a higher RF voltage.By increasing the pressure,plasma impedance becomes more resistive,so RF power deposition and electron density are enhanced.In particular,theα–γmode transition tends to occur at a lower|V_(dc)|with increase in pressure. 展开更多
关键词 RF capacitively coupled plasma DC-overlapped RF discharge power deposition discharge mode transition
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Shielding Effectiveness of Rural Concealed Communication Cable of Asymmetric/Symmetric Slots with Different Shapes
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作者 帅春江 《Agricultural Science & Technology》 CAS 2012年第8期1781-1783,共3页
With the rural concealed communication cable as the study object, the shielding effectiveness of different slot shapes was analyzed by using LBEM (linear boundary element method). The engineering example results sho... With the rural concealed communication cable as the study object, the shielding effectiveness of different slot shapes was analyzed by using LBEM (linear boundary element method). The engineering example results showed that for twocore shielded cable, the coupling capacitance of trapezoid slots (asymmetric and symmetric) changed the most, followed by rectangular slots (asymmetric and symmetric), and the changes of wedge slots were the smallest, but the change tenden- cies were consistent. In addition, with the increase of slot width of different slots, the coupling capacitance of tow-cored shielded cable showed small change. 展开更多
关键词 Rural concealed communication cable Slot with asymmetric and symmetric shapes coupling capacitance Linear boundary element method (LBEM)
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Crosstalk Estimation and Optimization in Deep Sub-Micron VLSI 被引量:4
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作者 刘庆华 唐璞山 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第5期535-542,共8页
RLC model is used to estimate the coupling noise between interconnect wires and make some analysis through the simulation result. Based on the analysis conclusion,some algorithms are developed to adjust the rou ting ... RLC model is used to estimate the coupling noise between interconnect wires and make some analysis through the simulation result. Based on the analysis conclusion,some algorithms are developed to adjust the rou ting result with crosstalk constraint. 展开更多
关键词 CROSSTALK coupling capacitance coupling inductance
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Characteristics of dual-frequency capacitively coupled SF_6/O_2 plasma and plasma texturing of multi-crystalline silicon 被引量:2
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作者 徐东升 邹帅 +2 位作者 辛煜 苏晓东 王栩生 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第6期361-369,共9页
Due to it being environmentally friendly, much attention has been paid to the dry plasma texturing technique serving as an alternative candidate for multicrystalline silicon (mc-Si) surface texturing. In this paper,... Due to it being environmentally friendly, much attention has been paid to the dry plasma texturing technique serving as an alternative candidate for multicrystalline silicon (mc-Si) surface texturing. In this paper, capacitively coupled plasma (CCP) driven by a dual frequency (DF) of 40.68 MHz and 13.56 MHz is first used for plasma texturing of mc-Si with SF6/O2 gas mixture. Using a hairpin resonant probe and optical emission techniques, DF-CCP characteristics and their influence on mc-silicon surface plasma texturing are investigated at different flow rate ratios, pressures, and radio-frequency (RF) input powers. Experimental results show that suitable plasma texturing of mc-silicon occurs only in a narrow range of plasma parameters, where electron density ne must be larger than 6.3 x 109 cm-3 and the spectral intensity ratio of the F atom to that of the O atom ([F]/[O]) in the plasma must be between 0.8 and 0.3. Out of this range, no cone-like structure is formed on the mc-silicon surface. In our experiments, the lowest reflectance of about 7.3% for mc-silicon surface texturing is obtained at an [F]/[O] of 0.5 and ne of 6.9 × 109 cm-3. 展开更多
关键词 dual frequency capacitively coupled plasma plasma texturing multi-crystalline silicon electrondensity
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Frequency Matching Effects on Characteristics of Bulk Plasmas and Sheaths for Dual-Frequency Capacitively Coupled Argon Discharges: One-Dimensional Fluid Simulation 被引量:2
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作者 王帅 徐翔 +1 位作者 宋远红 王友年 《Plasma Science and Technology》 SCIE EI CAS CSCD 2008年第1期57-60,共4页
A one-dimensional fluid model is proposed to simulate the dual-frequency capacitively coupled plasma for Ar discharges. The influences of the low frequency on the plasma density, electron temperature, sheath voltage d... A one-dimensional fluid model is proposed to simulate the dual-frequency capacitively coupled plasma for Ar discharges. The influences of the low frequency on the plasma density, electron temperature, sheath voltage drop, and ion energy distribution at the powered electrode are investigated. The decoupling effect of the two radio-frequency sources on the plasma parameters, especially in the sheath region, is discussed in detail. 展开更多
关键词 capacitively coupled plasmas dual frequency HYDRODYNAMICS SHEATH
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Plasma Uniformity in a Dual Frequency Capacitively Coupled Plasma Reactor Measured by Optical Emission Spectroscopy 被引量:2
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作者 赵国利 徐勇 +3 位作者 尚建平 刘文耀 朱爱民 王友年 《Plasma Science and Technology》 SCIE EI CAS CSCD 2011年第1期61-67,共7页
Local measurement of plasma radial uniformity was performed in a dual frequency capacitively coupled argon plasma (DF-CCP) reactor using an optical probe. The optical probe collects the light emission from a small s... Local measurement of plasma radial uniformity was performed in a dual frequency capacitively coupled argon plasma (DF-CCP) reactor using an optical probe. The optical probe collects the light emission from a small separate volume in plasma, thus enabling to diagnose the plasma uniformity for different experimental parameters. Both the gas pressure and the low- frequency (LF) power have apparent effects on the radial uniformity of argon plasma. With the increase in either pressure or LF power, the emission profiles changed from a bell-shaped to a double-peak distribution. The influence of a fused-silica ring around the electrodes on the plasma uniformity was also studied using the optical probe. Possible reasons that result in nonuniform plasmas in our experiments are discussed. 展开更多
关键词 dual frequency capacitively coupled plasma optical probe plasma uniformity
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A One-Dimensional Hybrid Simulation of DC/RF Combined Driven Capacitive Plasma 被引量:1
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作者 WANG Shuai XU Xiang WANG Younian 《Plasma Science and Technology》 SCIE EI CAS CSCD 2012年第1期32-36,共5页
We developed a one-dimensional hybrid model to simulate the DC/RF combined driven capacitively coupled plasma for argon discharges. The numerical results are used to analyze the influence of the DC source on the plasm... We developed a one-dimensional hybrid model to simulate the DC/RF combined driven capacitively coupled plasma for argon discharges. The numerical results are used to analyze the influence of the DC source on the plasma density distribution, ion energy distributions (IEDs) and ion angle distributions (IADs) on both the RF and DC electrodes. The increase in DC voltage drives more high-energy ions to the electrode applied to the DC source, which makes the IEDs at the DC electrode shift towards higher energy, and the peaks in the IADs shift towards small angle regions. At the same time, it also decreases the ion energy at the RF electrode and enlarges the incident angles of the ions, which strike the RF electrode. 展开更多
关键词 capacitively coupled plasmas DC/RF combined driven hybrid model IEDs IADs
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Surface modification of silicone rubber by CF4 radio frequency capacitively coupled plasma for improvement of flashover 被引量:1
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作者 Chenxu WANG Bo ZHANG +5 位作者 Sile CHEN Yuhao SUN Xiong YANG Yanan PENG Xingyu CHEN Guanjun ZHANG 《Plasma Science and Technology》 SCIE EI CAS CSCD 2022年第2期107-116,共10页
The flashover performance of insulating materials plays an important role in the development of high-voltage insulation systems.In this paper,silicone rubber(SIR)is modified by CF4 radio frequency capacitively coupled... The flashover performance of insulating materials plays an important role in the development of high-voltage insulation systems.In this paper,silicone rubber(SIR)is modified by CF4 radio frequency capacitively coupled plasma(CCP)for the improvement of surface insulation performance.The discharge mode and active particles of CCP are diagnosed by the digital single-lens reflex and the spectrometer.Scanning electron microscopy and x-ray photoelectron spectroscopy are used for the surface physicochemical properties of samples,while the surface charge dissipation,charge accumulation measurement,and flashover test are applied for the surface electrical characteristics.Experimental results show that the fluorocarbon groups can be grafted and the surface roughness increases after plasma treatment.Besides,the surface charge dissipation is decelerated and the positive charge accumulation is inhibited obviously for the treated samples.Furthermore,the surface flashover voltage can be increased by 26.67%after 10 min of treatment.It is considered that strong electron affinity of C–F and increased surface roughness can contribute to deepening surface traps,which not only inhibits the development of secondary electron emission avalanche but also alleviates the surface charge accumulation and finally improves the surface flashover voltage of SIR. 展开更多
关键词 silicon rubber CF4 radio frequency capacitively coupled plasma surface modification FLASHOVER
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Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C4F8/Ar Dual-Frequency Capacitively Coupled Plasma 被引量:1
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作者 XU Yijun WU Xuemei YE Chao 《Plasma Science and Technology》 SCIE EI CAS CSCD 2013年第10期1066-1070,共5页
Dry etching of 6H silicon carbide (6H-SiC) wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma (DF-CCP) was investigated. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) wer... Dry etching of 6H silicon carbide (6H-SiC) wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma (DF-CCP) was investigated. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy (OES) was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency (LF) source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CχFγ films' deposition, and reduce surface residues. 展开更多
关键词 SIC plasma etching dual-frequency capacitively coupled plasma X-ray photoelectron spectroscopy optical emission spectroscopy
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Signal Acquisition and Processing Method for Capacitive Electromagnetic Flowmeter 被引量:1
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作者 Hong-Yu Yang Yan Chen Hui Zhao 《Journal of Electronic Science and Technology》 CAS CSCD 2021年第1期79-88,共10页
A kind of signal acquisition circuit and the related signal processing method of the capacitanceelectromagnetic flowmeter (EMF) were introduced. The circuit can eliminate the influence of distributed capacitanceon the... A kind of signal acquisition circuit and the related signal processing method of the capacitanceelectromagnetic flowmeter (EMF) were introduced. The circuit can eliminate the influence of distributed capacitanceon the input impedance of the operational amplifier, and greatly improve the input impedance of the detection circuitto overcome the disadvantage of high signal source impedance. The rotating capacitor filter is a signal processingmethod based on the phase-sensitive detection technology. It can extract the weak signal from the strong and widebandbackground noise, so it is very suitable for the processing of capacitive electromagnetic flow signals. Throughthe comparison of the signal amplitude obtained at different flow rates and the comparison of signal spectrumcomponents before and after the filter, the effectiveness of the bootstrap signal acquisition circuit and rotatingcapacitor filtering method is verified. 展开更多
关键词 Bootstrap circuit capacitive coupling electromagnetic induction fluid flow measurement lock-in amplifier.
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The investigation of DARC etch back in DRAM capacitor oxide mask opening 被引量:1
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作者 Jianqiu Hou Zengwen Hu +5 位作者 Kuowen Lai Yule Sun Bo Shao Chunyang Wang Xinran Liu Karson Liu 《Journal of Semiconductors》 EI CAS CSCD 2021年第7期88-92,共5页
Opening the silicon oxide mask of a capacitor in dynamic random access memory is a critical process on a capacitive coupled plasma(CCP)etch tool.Three steps,dielectric anti-reflective coating(DARC)etch back,silicon ox... Opening the silicon oxide mask of a capacitor in dynamic random access memory is a critical process on a capacitive coupled plasma(CCP)etch tool.Three steps,dielectric anti-reflective coating(DARC)etch back,silicon oxide etch and strip,are contained.To acquire good performance,such as low leakage current and high capacitance,for further fabricating capacitors,we should firstly optimize DARC etch back.We developed some experiments,focusing on etch time and chemistry,to evalu-ate the profile of a silicon oxide mask,DARC remain and critical dimension.The result shows that etch back time should be con-trolled in the range from 50 to 60 s,based on the current equipment and condition.It will make B/T ratio higher than 70%mean-while resolve the DARC remain issue.We also found that CH_(2)F_(2) flow should be~15 sccm to avoid reversed CD trend and keep in-line CD. 展开更多
关键词 dynamic random access memory(DRAM) oxide mask open of capacitor capacitive coupled plasma(CCP)etch dielectric anti-reflective coating(DARC) etch back(EB)
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Measurements of argon metastable density using the tunable diode laser absorption spectroscopy in Ar and Ar/O2 被引量:1
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作者 Dao-Man Han Yong-Xin Liu +3 位作者 Fei Gao Wen-Yao Liu Jun Xu You-Nian Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第6期298-306,共9页
Densities of Ar metastable states 1s5 and 1s3 are measured by using the tunable diode laser absorption spectroscopy(TDLAS) in Ar and Ar/O2 mixture dual-frequency capacitively coupled plasma(DF-CCP). We investigate... Densities of Ar metastable states 1s5 and 1s3 are measured by using the tunable diode laser absorption spectroscopy(TDLAS) in Ar and Ar/O2 mixture dual-frequency capacitively coupled plasma(DF-CCP). We investigate the effects of high-frequency(HF, 60 MHz) power, low-frequency(LF, 2 MHz) power, and working pressure on the density of Ar metastable states for three different gas components(0%, 5%, and 10% oxygen mixed in argon). The dependence of Ar metastable state density on the oxygen content is also studied at different working pressures. It is found that densities of Ar metastable states in discharges with different gas components exhibit different behaviors as HF power increases. With the increase of HF power, the metastable density increases rapidly at the initial stage, and then tends to be saturated at a higher HF power. With a small fraction(5% or 10%) of oxygen added in argon plasma, a similar change of the Ar metastable density with HF power can be observed, but the metastable density is saturated at a higher HF power than in the pure argon discharge. In the DF-CCP, the metastable density is found to be higher than in a single frequency discharge, and has weak dependence on LF power. As working pressure increases, the metastable state density first increases and then decreases,and the pressure value, at which the density maximum occurs, decreases with oxygen content increasing. Besides, adding a small fraction of oxygen into argon plasma will significantly dwindle the metastable state density as a result of quenching loss by oxygen molecules. 展开更多
关键词 argon metastable states tunable diode laser absorption spectroscopy capacitively coupled plasmas
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