Analysis and Optimum Design of Differential Inductors Using Distributed Capacitance Model

A distributed capacitance model for monolithic inductors is developed to predict the equivalently parasitical capacitances of the inductor.The ratio of the self-resonant frequency (f SR) of the differential-driven symmetric inductor to the f SR of the single-ended driven inductor is firstly predicted and explained.Compared with a single-ended configuration,experimental data demonstrate that the differential inductor offers a 127% greater maximum quality factor and a broader range of operating frequencies.Two differential inductors with low parasitical capacitance are developed and validated.

Time lag characteristics of sap flow in seed-maize and their implications for modeling transpiration in an arid region of Northwest China

Plant capacity for water storage leads to time lags between basal stem sap flow and transpiration in various woody plants. Internal water storage depends on the sizes of woody plants. However, the changes and its influencing factors in time lags of basal stem flow during the development of herbaceous plants including crops remain unclear. A field experiment was conducted in an arid region of Northwest China to examine the time lag characteristics of sap flow in seed-maize and to calibrate the transpiration modeling. Cross-correlation analysis was used to estimate the time lags between stem sap flow and meteorological driving factors including solar radiation（R_s） and vapor pressure deficit of the air（VPD_（air））. Results indicate that the changes in seed-maize stem sap flow consistently lagged behind the changes in R_s and preceded the changes in VPD_（air） both on hourly and daily scales, suggesting that light-mediated stomatal closures drove sap flow responses. The time lag in the maize＇s sap flow differed significantly during different growth stages and the difference was potentially due to developmental changes in capacitance tissue and/or xylem during ontogenesis. The time lags between stem sap flow and R_s in both female plants and male plants corresponded to plant use of stored water and were independent of total plant water use. Time lags of sap flow were always longer in male plants than in female plants. Theoretically, dry soil may decrease the speed by which sap flow adjusts ahead of shifts in VPD_（air） in comparison with wet soil and also increase the speed by which sap flow adjusts to R_s. However, sap flow lags that were associated with R_s before irrigation and after irrigation in female plants did not shift. Time series analysis method provided better results for simulating seed-maize sap flow with advantages of allowing for fewer variables to be included. This approach would be helpful in improving the accuracy of estimation for canopy transpiration and conductance using meteorological measurements.

Analytical capacitance model for 14 nm Fin FET considering dual-k spacer

The conformal mapping of an electric field has been employed to develop an accurate parasitic capacitance model for nanoscale fin field-effect transistor（Fin FET） device. Firstly, the structure of the dual-layer spacers and the gate parasitic capacitors are thoroughly analyzed. Then, the Cartesian coordinate is transferred into the elliptic coordinate and the equivalent fringe capacitance model can be built-up by some arithmetical operations. In order to validate our proposed model, the comparison of statistical analysis between the proposed calculation and the 3D-TCAD simulation has been carried out, and several different material combinations of the dual-k structure have been considered. The results show that the proposed analytical model can accurately calculate the fringe capacitance of the Fin FET device with dual-k spacers.

Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations

We consider intrinsic gate capacitance variations due to random dopants in the nanometer metal oxide semi- conductor field effect transistor （MOSFET） channel. The variations of total gate capacitance and gate transcapacitances are investigated and the strong correlations between the trans-capacitance variations are discovered. A simple statistical model is proposed for accurately capturing total gate capacitance variability based on the correlations. The model fits very well with the Monte Carlo simulations and the average errors are -0.033% for n-type metal-oxide semiconductor and -0.012% for p-type metal-oxide semiconductor, respectively. Our simulation studies also indicate that, owing to these correlations, the total gate capacitance variability will not dominate in gate capacitance variations.

Simulation of Dual-Electrode Capacitively Coupled Plasma Discharges

Dual-electrode capacitively coupled plasma discharges are investigated here to lower the non-uniformity of plasma density. The dual-electrode structure proposed by Jung splits the electrode region and increases the flexibility of fine tuning non-uniformity. Different RF voltages,frequencies, phase-shifts and electrode areas are simulated and the influences are discussed. RF voltage and electrode area have a non-monotonic effect on non-uniformity, while frequency has a monotonic effect. Phase-shift has a cyclical influence on non-uniformity. A special combination of 224 V voltage and 11% area ratio with 10 MHz lowers the non-uniformity of the original set（200 V voltage and 0% area ratio with 10 MHz） by 46.5%. The position of the plasma density peak at the probe line has been tracked and properly tuning the phase-shift can obtain the same trace as tuning frequency or voltage.