420nm thick CH_3NH_3PbI_(3-x)Br_x capping layers for efficient TiO_2 nanorod array perovskite solar cells

The rutile TiO2 nanorod arrays with 240 nm in length, 30 nm in diameter, and 420 btm 2 in areal density were prepared by the hydrothermal method to replace the typical 200-300 nm thick mesoporous TiO2 thin films in perovskite solar cells. The CH3NH3PbI3 xBrx capping layers with different thicknesses were obtained on the TiO2 nanorod arrays using different concentration PbI2.DMSO complex precursor solutions in DMF and the photovoltaic performances of the corresponding solar cells were compared. The perovskite solar cells based on 240 nm long TiO2 nanorod arrays and 420 nm thick CH3NH3PbI3 xBrx capping layers showed the best photoelectric conversion efficiency （PCE） of 15.56% and the average PCE of 14.93 ± 0.63% at the relative humidity of 50%-54% under the illumination of simulated AM 1.5 sunlight （100 mW.cm-2）.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown（TDDB） characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy（SIMS） analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio Nit/Not are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo（kMC） method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.

Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

The strain relaxation of an A1GaN barrier layer may be influenced by a thin cap layer above, and affects the transport properties of A1GaN/GaN heterostructures. Compared with the slight strain relaxation found in A1GaN barrier layer without cap layer, it is found that a thin cap layer can induce considerable changes of strain state in the A1GaN barrier layer. The degree of relaxation of the A1GaN layer significantly influences the transport properties of the two-dimensional electron gas （2DEG） in A1GaN/GaN heterostructures. It is observed that electron mobility decreases with the increasing degree of relaxation of the A1GaN barrier, which is believed to be the main cause of the deterioration of crystalline quality and morphology on the A1GaN/GaN interface. On the other hand, both GaN and A1N cap layers lead to a decrease in 2DEC density. The reduction of 2DEG caused by the GaN cap layer may be attributed to the additional negative polarization charges formed at the interface between CaN and A1GaN, while the reduction of the piezoelectric effect in the A1GaN layer results in the decrease of 2DEC density in the case of A1N cap layer.

Influence of an Fe cap layer on the structural and magnetic properties of Fe_(49)Pt_(51)/Fe bi-layers

The influences of an Fe cap layer on the structural and magnetic properties of FePt/Fe bi-layers are investigated. Compared with single FePt alloy films, a thin Fe layer can affect the crystalline orientation and improve the chemical ordering of L10 FePt films. Moreover, the coercivity increases when a thin Fe layer covers the FePt layer. Beyond a critical thickness, however, the Fe cover layer quickens the magnetization reversal of Fe49Pt51/Fe bi-layers by their exchange coupling.

Parameterization for the Depth of the Entrainment Zone above the Convectively Mixed Layer

It has been noted that when the convective Richardson number Ri* is used to characterize the depth of the entrainment zone, various parameterization schemes can be obtained. This situation is often attributed to the invalidity of parcel theory. However, evidence shows that the convective Richardson number Ri* might be an improper characteristic scaling parameter for the entrainment process. An attempt to use an innovative parameter to parameterize the entrainment-zone thickness has been made in this paper. Based on the examination of the data of water-tank experiments and atmospheric measurements, it is found that the total lapse rate of potential temperature across the entrainment zone is proportional to that of the capping inversion layer. Inserting this relationship into the so-called parcel theory, it thus gives a new parameterization scheme for the depth of the entrainment zone. This scheme includes the lapse rate of the capping inversion layer that plays an important role in the entrainment process. Its physical representation is reasonable. The new scheme gives a better ordering of the data measured in both water-tank and atmosphere as compared with the traditional method using Ri*. These indicate that the parcel theory can describe the entrainment process suitably and that the new parameter is better than Ri*.

The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence （PL） measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal- optical （LO） phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton-LO-phonon coupling is strongly affected by the thickness of the cap layer.

Effects of GaN cap layer thickness on an AlN/GaN heterostructure

In this study, we investigate the effects of Ga N cap layer thickness on the two-dimensional electron gas（2DEG）electron density and 2DEG electron mobility of Al N/Ga N heterostructures by using the temperature-dependent Hall measurement and theoretical fitting method. The results of our analysis clearly indicate that the Ga N cap layer thickness of an Al N/Ga N heterostructure has influences on the 2DEG electron density and the electron mobility. For the Al N/Ga N heterostructures with a 3-nm Al N barrier layer, the optimized thickness of the Ga N cap layer is around 4 nm and the strained a-axis lattice constant of the Al N barrier layer is less than that of Ga N.

Design and simulation to improve the structural efficiency of green light emission of GaN/InGaN/AIGaN light emitting diode

This study considered the design of an efficient, high brightness polar InGaN/GaN light emitting diode （LED） structure with A1GaN capping layer for green light emission. The deposition of high In （〉 15%） composition within InGaN quantum well （QW） has limitations when providing intense green light. To design an effective model for a highly efficient InGaN green LEDs, this study considered the compositions of indium and aluminum for InxGal xN QW and AlyGal yN cap layers, along with different layer thicknesses of well, barrier and cap. These structural properties significantly affect different properties. For example, these properties affect electric fields of layers, polarization, overall elastic stress energy and lattice parameter of the structure, emission wavelength, and intensity of the emitted light. Three models with different composition and layer thicknesses are simulated and analyzed to obtain green light with in-plane equilibrium lattice parameter close to GaN （3.189 A ） with the highest oscillator strength values. A structure model is obtained with an oscillator strength value of 1.18 × 10-1 and least in-plane equilibrium lattice constant of 3.218 A. This emitter can emit at a wavelength of 540 nm, which is the expected design for the fabrication of highly efficient, bright green LEDs.

Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

Simulations are carried out to explore the possibility of achieving high breakdown voltage of Gain HEMT （high-electron mobility transistor）. GaN cap layers with gradual increase in the doping concentration from 2 x 10^16 to 5 x 10^19 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/A1GaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID （un-intentionally doped） GaN/A1GaN/GaN HEMT. We calculated and analyzed the distribution of electrons＇ density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices.