The nonstoichiometric β-SIC powders were synthesized via combustion reaction of Si and C system in a 0.1 MPa nitrogen atmosphere, using Teflon as the chemical activator. The prepared powders were invistigated by XRD ...The nonstoichiometric β-SIC powders were synthesized via combustion reaction of Si and C system in a 0.1 MPa nitrogen atmosphere, using Teflon as the chemical activator. The prepared powders were invistigated by XRD and Raman spectra. The results indicates that the cell parameters of all the prepared β-SIC powder are smaller than the standard value of β-SIC because of generation of CSi defects. The complex permittivity of prepared products was carried out in the frequency range of 8.2-12.4 GHz. It shows that the dielectric property of prepared β-SiC powder decrease with increasing PTFE content. The effect of CSi defects on dielectric property of β-SiC powder has been discussed.展开更多
基金supported by the National Natural Science Foundation of China under grant No. 50572090the fund of the Slate Key Laboratory of Solidification Processing in NWPU, No. KP200901
文摘The nonstoichiometric β-SIC powders were synthesized via combustion reaction of Si and C system in a 0.1 MPa nitrogen atmosphere, using Teflon as the chemical activator. The prepared powders were invistigated by XRD and Raman spectra. The results indicates that the cell parameters of all the prepared β-SIC powder are smaller than the standard value of β-SIC because of generation of CSi defects. The complex permittivity of prepared products was carried out in the frequency range of 8.2-12.4 GHz. It shows that the dielectric property of prepared β-SiC powder decrease with increasing PTFE content. The effect of CSi defects on dielectric property of β-SiC powder has been discussed.
