目的探讨镉暴露对HepG2细胞转录因子NF-E2相关因子2(NRF2)信号通路的影响。方法采用甲臢比色法测定CdCl_2(0、1、2.5、5、10、25、50、100、200μmol/L)处理24 h后,HepG2细胞活力变化;应用蛋白免疫印迹法检测CdCl_2(1、2、5、10、20μmo...目的探讨镉暴露对HepG2细胞转录因子NF-E2相关因子2(NRF2)信号通路的影响。方法采用甲臢比色法测定CdCl_2(0、1、2.5、5、10、25、50、100、200μmol/L)处理24 h后,HepG2细胞活力变化;应用蛋白免疫印迹法检测CdCl_2(1、2、5、10、20μmol/L)处理细胞6 h后,NRF2蛋白水平;采用RT-q PCR方法检测10μmol/L CdCl_2处理细胞2、4、6、12、24 h后,GCLC、GCLM、HO1和AKR1C1 m RNA水平变化,检测CdCl_2(1、2、5、10、20μmol/L)处理细胞6 h后,GCLC、GCLM、HO1和AKR1C1 m RNA水平变化。结果 HepG2细胞活力随镉处理剂量升高而降低(P<0.05);与对照组(0.60±0.01)比较,1、2、5、10、20μmol/L镉处理组HepG2细胞NRF2蛋白表达水平[分别为(0.65±0.01)、(1.37±0.04)、(1.94±0.05)、(2.24±0.07)、(2.22±0.05)]均明显升高(P<0.05);与对照组比较,镉处理6 h时,HepG2细胞内GCLC、GCLM、HO1和AKR1C1 m RNA水平[分别为(45.76±7.04)、(114.21±5.23)、(59.52±1.50)、(674.13±27.12)]明显升高(P<0.05);与对照组比较,5μmol/L镉处理组HepG2细胞内GCLC和GCLM m RNA水平[分别为(24.77±2.16)、(29.93±0.67)]升高,2μmol/L镉处理组HepG2细胞内HO1和AKR1C1 m RNA水平[分别(28.55±2.02)、(186.32±12.63)]升高(P<0.05)。结论镉暴露能激活HepG2细胞系中NRF2信号通路。展开更多
The main aim of this research is to investigate the effect of salt concentration on the dielectric properties （AC （CrAC）, permittivity （d）, dielectric loss （d＇）, and dielectric relaxation process） and melting...The main aim of this research is to investigate the effect of salt concentration on the dielectric properties （AC （CrAC）, permittivity （d）, dielectric loss （d＇）, and dielectric relaxation process） and melting behavior of polyethylene oxide （PEO）/CdC12 complexes. The dielectric study was carried out over a frequency range 10-335 kHz and a temperature range 25--45~C. The AC conductivity, permittivity and dielectric loss of the PEO/CdC12 complexes increase with increasing salt concentration and temperature. Also, it was found that the addition of CdC12 salt to PEO host reduced the melting temperature of PEO host. Dielectric results reveal that the relaxation process of these complexes is due to viscoelastic relaxation or non-Debye relaxation at room temperature. Additionally, it was found that relaxation behavior remained viscoelastic at different temperatures and salt concentrations.展开更多
文摘目的探讨镉暴露对HepG2细胞转录因子NF-E2相关因子2(NRF2)信号通路的影响。方法采用甲臢比色法测定CdCl_2(0、1、2.5、5、10、25、50、100、200μmol/L)处理24 h后,HepG2细胞活力变化;应用蛋白免疫印迹法检测CdCl_2(1、2、5、10、20μmol/L)处理细胞6 h后,NRF2蛋白水平;采用RT-q PCR方法检测10μmol/L CdCl_2处理细胞2、4、6、12、24 h后,GCLC、GCLM、HO1和AKR1C1 m RNA水平变化,检测CdCl_2(1、2、5、10、20μmol/L)处理细胞6 h后,GCLC、GCLM、HO1和AKR1C1 m RNA水平变化。结果 HepG2细胞活力随镉处理剂量升高而降低(P<0.05);与对照组(0.60±0.01)比较,1、2、5、10、20μmol/L镉处理组HepG2细胞NRF2蛋白表达水平[分别为(0.65±0.01)、(1.37±0.04)、(1.94±0.05)、(2.24±0.07)、(2.22±0.05)]均明显升高(P<0.05);与对照组比较,镉处理6 h时,HepG2细胞内GCLC、GCLM、HO1和AKR1C1 m RNA水平[分别为(45.76±7.04)、(114.21±5.23)、(59.52±1.50)、(674.13±27.12)]明显升高(P<0.05);与对照组比较,5μmol/L镉处理组HepG2细胞内GCLC和GCLM m RNA水平[分别为(24.77±2.16)、(29.93±0.67)]升高,2μmol/L镉处理组HepG2细胞内HO1和AKR1C1 m RNA水平[分别(28.55±2.02)、(186.32±12.63)]升高(P<0.05)。结论镉暴露能激活HepG2细胞系中NRF2信号通路。
文摘The main aim of this research is to investigate the effect of salt concentration on the dielectric properties （AC （CrAC）, permittivity （d）, dielectric loss （d＇）, and dielectric relaxation process） and melting behavior of polyethylene oxide （PEO）/CdC12 complexes. The dielectric study was carried out over a frequency range 10-335 kHz and a temperature range 25--45~C. The AC conductivity, permittivity and dielectric loss of the PEO/CdC12 complexes increase with increasing salt concentration and temperature. Also, it was found that the addition of CdC12 salt to PEO host reduced the melting temperature of PEO host. Dielectric results reveal that the relaxation process of these complexes is due to viscoelastic relaxation or non-Debye relaxation at room temperature. Additionally, it was found that relaxation behavior remained viscoelastic at different temperatures and salt concentrations.
