This work shows that despite a lattice mismatch of almost 20%, CdMnTe/CdTe/CdMnTe heterostructures grown directly on Si(111) have surprisingly good optical emission properties. The investigated structures were grown b...This work shows that despite a lattice mismatch of almost 20%, CdMnTe/CdTe/CdMnTe heterostructures grown directly on Si(111) have surprisingly good optical emission properties. The investigated structures were grown by molecular beam epitaxy and characterized by scanning transmission electron microscopy, macro-and micro-photoluminescence. Low temperature macro-photoluminescence experiments indicate three emission bands which depend on the CdTe layer thickness and have different confinement characteristics. Temperature measurements reveal that the lower energy emission band (at 1.48 eV)is associated to defects and bound exciton states, while the main emission at 1.61 eV has a weak 2D character and the higher energy one at 1.71 eV has a well-defined (zero-dimensional, 0D) 0D nature. Micro-photoluminescence measurements show the existence of sharp and strongly circularly polarized (up to 40%) emission lines which can be related to the presence of Mn in the heterostructure. This result opens the possibility of producing photon sources with the typical spin control of the diluted magnetic semiconductors using the low-cost silicon technology.展开更多
Cadmium telluride(CdTe)thin film solar cells have gained significant attention in the photovoltaic industry due to their high efficiency and low cost.CdTe solar cells have achieved a high-power conversion efficiency o...Cadmium telluride(CdTe)thin film solar cells have gained significant attention in the photovoltaic industry due to their high efficiency and low cost.CdTe solar cells have achieved a high-power conversion efficiency of 23.1%.To further boost the device's performance,it is crucial to systematically tune the doping concen-tration and carrier concentration,which are dominated by the doping approach and the following dopant activation processes.Both Group I elements(e.g.,Cu)and Group V elements(e.g.,As)doping have demonstrated high efficiency and utilizing various doping techniques.This review provides an overview of the history of the CdTe thin film technology,doping mechanisms,doping techniques,challenges,and potential solutions to further improve device performance.展开更多
基金the financial support by the Brazilian funding agencies CAPES, CNPq (306201/2022-4)FAPEMIG (APQ-00371-17, APQ-02500-22, APQ-00388-22, and RED00223-23)FAPESP (2021/06803-4)。
文摘This work shows that despite a lattice mismatch of almost 20%, CdMnTe/CdTe/CdMnTe heterostructures grown directly on Si(111) have surprisingly good optical emission properties. The investigated structures were grown by molecular beam epitaxy and characterized by scanning transmission electron microscopy, macro-and micro-photoluminescence. Low temperature macro-photoluminescence experiments indicate three emission bands which depend on the CdTe layer thickness and have different confinement characteristics. Temperature measurements reveal that the lower energy emission band (at 1.48 eV)is associated to defects and bound exciton states, while the main emission at 1.61 eV has a weak 2D character and the higher energy one at 1.71 eV has a well-defined (zero-dimensional, 0D) 0D nature. Micro-photoluminescence measurements show the existence of sharp and strongly circularly polarized (up to 40%) emission lines which can be related to the presence of Mn in the heterostructure. This result opens the possibility of producing photon sources with the typical spin control of the diluted magnetic semiconductors using the low-cost silicon technology.
基金supported by the National Science Foundation under contract No.ECCS-2413632,MOMS-2330728,TI-2329871,DMR-2330738,CMMI-2226918,and DMREF-2323766。
文摘Cadmium telluride(CdTe)thin film solar cells have gained significant attention in the photovoltaic industry due to their high efficiency and low cost.CdTe solar cells have achieved a high-power conversion efficiency of 23.1%.To further boost the device's performance,it is crucial to systematically tune the doping concen-tration and carrier concentration,which are dominated by the doping approach and the following dopant activation processes.Both Group I elements(e.g.,Cu)and Group V elements(e.g.,As)doping have demonstrated high efficiency and utilizing various doping techniques.This review provides an overview of the history of the CdTe thin film technology,doping mechanisms,doping techniques,challenges,and potential solutions to further improve device performance.
