Effect of ZnO films on CdTe solar cells

The ZnO high resistivity transparent （HRT） layers were prepared by DC magnetron sputtering on the 1 mm borosilicate glass with 150 nm ITO coating. The structural, optical and electrical properties of the as-deposited films were investigated by XRD, UV/Vis spectroscopy and four-probe technology. The interface characters of the 1TO/ZnO and ZnO/CdS systems were studied by ultraviolet photoelectron spectroscopy （UPS） and X-ray pho- toelectron spectroscopy （XPS） depth profiling tests. The results show that ZnO has good optical and electrical properties. The insertion of the ZnO films decreases the energy barrier between ITO and CdS films. The energy conversion efficiency and quantum efficiency were found to be 12.77% （8.9%） and 〉 90% （79%） with or （without） ZnO films of CdTe solar cells. Furthermore, the effect of thickness, mobility and carrier density of ZnO films on CdTe solar cells was analyzed by AMPD-1D.

Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy （DLTS）, we study the deep levels in CdS/CdTe thin film solar cells with Te：Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at Ev＋0.128~eV, originates from the vacancy of Cd （VCd. The electron trap E1, found at Ec-0.178~eV, is considered to be correlated with the interstitial Cui= in CdTe.

Preparation and Properties of CdTe Polycrystalline Films for Solar Cells

The structure and characteristics of CdTe thin filrns are closely dependent on the whole deposition process in close-space sublimation （CSS）. The physical mechanism of CSS was analyzed aud the temperature distribution in CSS system was measured, and the influences of the increasing-temperature process and pressure on the preliminary nucleus creation were studied. The resuits indicate ： tire samples deposited at different pressures hare a cubical structure of CdTe and the diffraction peaks of CdS and SnO2 ： F. As the atmosphere pressure increases, the crystal size of CdTe decreases, the rate of the transparency of the thin film decreases and the absorption side moves towards the short-wave direction. After a 4-minute depositing process with a substrate teraw.rature of 500℃ and a source temperature of 620 ℃, the polycostallinc thin films can be mmade , so the production of high-quality integrated cell with StrO2： F/ CdS/ CdTe/ Au structure is hopeful.

Recombination-induced voltage-dependent photocurrent collection loss in CdTe thin film solar cell

Recently, the efficiency of CdTe thin film solar cell has been improved by using new type of window layer Mg_(x)Zn_(1-x)O(MZO). However, it is hard to achieve such a high efficiency as expected. In this report a comparative study is carried out between the MZO/CdTe and CdS/CdTe solar cells to investigate the factors affecting the device performance of MZO/CdTe solar cells. The efficiency loss quantified by voltage-dependent photocurrent collection efficiency(ηC(V′)) is 3.89% for MZO/CdTe and 1.53% for CdS/CdTe solar cells. The higher efficiency loss for the MZO/CdTe solar cell is induced by more severe carrier recombination at the MZO/CdTe p-n junction interface and in CdTe bulk region than that for the CdS/CdTe solar cell. Activation energy(Ea) of the reverse saturation current of the MZO/CdTe and CdS/CdTe solar cells are found to be 1.08 e V and 1.36 e V, respectively. These values indicate that for the CdS/CdTe solar cell the carrier recombination is dominated by bulk Shockley-Read-Hall(SRH) recombination and for the MZO/CdTe solar cell the carrier recombination is dominated by the p-n junction interface recombination. It is found that the tunneling-enhanced interface recombination is also involved in carrier recombination in the MZO/CdTe solar cell. This work demonstrates the poor device performance of the MZO/CdTe solar cell is induced by more severe interface and bulk recombination than that of the CdS/CdTe solar cell.

A High Efficiency Ultrathin CdTe Solar Cell for Nano-Area Applications

Due to limited availability and the rising price of telluride, the biggest challenge in solar Photo-voltaic (PV) is to successfully design and fabricate optimized CdTe solar cells with reducing the cell thickness that show simultaneously high efficiency and current density. A novel structure of ultrathin CdTe solar cells is proposed in this paper that focuses on conversion efficiency. This structure achieved by rotating 90o in the base line structure that suggests high efficiency due to the high current density. The result showed a considerable improvement over the 15% efficiency of the reference solar cell. The proposed structure is quite noteworthy in reducing the amount of material used and associated losses. Under global air mass (AM) 1.5 conditions, an open-circuit voltage (Voc) of 866 mV, a short-circuit current density (Jsc) of 74.84 mA/cm2, and a fill factor (FF) of 48.2% were obtained corresponding to a conversion efficiency of 31.2%.

Influence of Cu_xS back contact on CdTe thin film solar cells

We present a detailed study on CuxS polycrystalline thin films prepared by chemical bath method and utilized as back contact material for CdTe solar cells.The characteristics of the films deposited on Si-substrate are studied by XRD.The results show that as-deposited CuxS thin film is in an amorphous phase while after annealing,samples are in polycrystalline phases with increasing temperature.The thickness of CuxS thin films has great impact on the performance of CdS/CdTe solar cells.When the thickness of the film is about 75 nm the performance of CdS/CdTe thin film solar cells is found to be the best.The energy conversion efficiency can be higher than 12.19%,the filling factor is higher than 68.82% and the open-circuit voltage is more than 820 mV.

Thermionic emission theory and diffusion theory applied to CdTe PV devices

In this work, a comprehensive model that takes the phenomenon of carrier thermionic-emission within the frame work of a diffusion theory of current conducting into account in the type Ⅱ hetero-junction Cd Te solar cell is developed. According to this model, it is found that the total current flowing through the Cd Te solar cell is limited by the thermionic process for very thin quasi-neutral regions and limited by the diffusion process for the reverse case. In future research of the Cd Te solar cell, such an approach may enable the determination of the boundary conditions for all doping profiles and computation of the conversion efficiency, etc.