GeSi Source/Drain Structure for Suppression of Short Channel Effect in SOI p-MOSFET's

GeSi source/drain structure is purposefully adopted in SOI p MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold voltage rolling off and DIBL effect is thoroughly investigated,as well as the influence of the Ge concentration and silicon film thickness.The Ge concentration should be carefully chosen as a tradeoff between the driving current and SCE improvement.The detailed physics is explained.

Channel effect of the modified powdery mixture of ammonium nitrate and fuel oil

The modified powdery mixture of ammonium nitrate and fuel oil （MPANFO） is a new breed of industrial explosives developed years ago in China. As one of the important properties of an industrial explosive, the channel effect of MPANFO was reported in this paper. A series of experiments were conducted to determine the channel effect of MPANFO. The blasthole diameter range was estimated to avoid the channel effect of MPANFO. Three empirical formulae for predicting the detonation length of MPANFO were provided in terms of the channel effect. Experiments and theoretical analysis indicate that the channel effect of MPANFO is very serious. The reason why the channel effect of MPANFO is worse than that of other industrial explosives is explained at a theoretical level. In addition, some properties of MPANFO, such as sympathetic distance, detonation velocity and brisance, are determined.

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs

The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.

Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.

Static characteristics and short channel effect in enhancement-mode AlN/GaN/AlN N-polar MISFET with self-aligned source/drain regions

This paper aims to simulate the I–V static characteristic of the enhancement-mode（E-mode） Npolar GaN metal–insulator–semiconductor field effect transistor（MISFET） with self-aligned source/drain regions.Firstly, with SILVACO TCAD device simulation, the drain–source current as a function of the gate–source voltage is calculated and the dependence of the drain–source current on the drain–source voltage in the case of different gate–source voltages for the device with a 0.62 m gate length is investigated. Secondly, a comparison is made with the experimental report. Lastly, the transfer characteristic with different gate lengths and different buffer layers has been performed. The results show that the simulation is in accord with the experiment at the gate length of 0.62 m and the short channel effect becomes pronounced as gate length decreases. The E-mode will not be held below a100 nm gate length unless both transversal scaling and vertical scaling are being carried out simultaneously.

Microscopic phase-field study for oriented diffusion channel effect of nickel-based alloy and phases' effect mechanism

In this paper,a microscopic phase-field model was used to investigate the effect of the oriented diffusion channel and the phases' effect mechanism for the Ni75Al6.0V19.0 alloy during a phase transformation process.A diffusion channel of V was formed in the [100] direction.The oriented growth of DO22 in this direction,when an elastic misfit stress field existed,forced Al to form a diffusion channel next to DO22,resulting in L12-oriented growth.With an increase in stress,the oriented growth increased initially and then decreased.At a higher stress,the average values of the occupation probability for V atoms became constant later while Al atoms earlier.

High-speed and high-performance polarization-based quantum key distribution system without side channel effects caused by multiple lasers

Side channel effects such as temporal disparity and intensity fluctuation of the photon pulses caused by random bit generation with multiple laser diodes in high-speed polarization-based BB84 quantum key distribution(QKD) systems can be eliminated by increasing the DC bias current condition. However, background photons caused by the spontaneous emission process under high DC bias current degrade the performance of QKD systems. In this study, we investigated the effects of spontaneously emitted photons on the system performance in a high-speed QKD system at a clock rate of 400 MHz. Also, we show further improvements in the system performance without side channel effects by utilizing the temporal filtering technique with real-time fieldprogrammable gate array signal processing.

Short channel effect in deep submicron PDSOI nMOSFETs

Deep submicron partially depleted silicon on insulator （PDSOI） nMOSFETs were fabricated based on the 0.35μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences （IMECAS）. Mechanisms determining short-channel effects （SCE） in PDSOI nMOSFETs are clarified based on experimental results of threshold voltage dependence upon gate length. The effects of body bias, drain bias, temperature and body contact on the SCE have been investigated. The SCE in SOI devices is found to be dependent on body bias, drain bias and body contact. Floating body devices show a more severe reverse short channel effect （RSCE） than devices with body contact structure. Devices with low body bias and high drain bias show a more obvious SCE.

Performance optimization of tri-gate junctionless FinFET using channel stack engineering for digital and analog/RF design

This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale region using SiGe material for the channel.For the analysis,three different channel structures are used:(a)tri-layer stack channel(TLSC)(Si-SiGe-Si),(b)double layer stack channel(DLSC)(SiGe-Si),(c)single layer channel(SLC)(S_(i)).The I−V characteristics,subthreshold swing(SS),drain-induced barrier lowering(DIBL),threshold voltage(V_(t)),drain current(ION),OFF current(IOFF),and ON-OFF current ratio(ION/IOFF)are observed for the structures at a 20 nm gate length.It is seen that TLSC provides 21.3%and 14.3%more ON current than DLSC and SLC,respectively.The paper also explores the analog and RF factors such as input transconductance(g_(m)),output transconductance(gds),gain(gm/gds),transconductance generation factor(TGF),cut-off frequency(f_(T)),maximum oscillation frequency(f_(max)),gain frequency product(GFP)and linearity performance parameters such as second and third-order harmonics(g_(m2),g_(m3)),voltage intercept points(VIP_(2),VIP_(3))and 1-dB compression points for the three structures.The results show that the TLSC has a high analog performance due to more gm and provides 16.3%,48.4%more gain than SLC and DLSC,respectively and it also provides better linearity.All the results are obtained using the VisualTCAD tool.

Effects of the Reynolds number on the mean skin friction decomposition in turbulent channel flows

As the Reynolds number increases, the skin friction has been identified as the dominant drag in many practical applications. In the present paper, the effects of the Reynolds number on the mean skin friction decomposition in turbulent channel flows up to Reτ= 5 200 are investigated based on two different methods, i.e., the FukagataIwamoto-Kasagi(FIK) identity(FUKAGATA, K., IWAMOTO, K., and KASAGI, N.Contribution of Reynolds stress distribution to the skin friction in wall-bounded flows.Physics of Fluids, 14(11), L73–L76(2002)) and the Renard-Deck(RD) identity(DECK,S., RENARD, N., LARAUFIE, R., and WEISS, P.′E. Large-scale contribution to mean wall shear stress in high-Reynolds-number flat-plate boundary layers up to Reθ= 13 650.Journal of Fluid Mechanics, 743, 202–248(2014)). The direct numerical simulation(DNS) data provided by Lee and Moser(LEE, M. and MOSER, R. D. Direct numerical simulation of turbulent channel flow up to Reτ≈ 5 200. Journal of Fluid Mechanics,774, 395–415(2015)) are used. For these two skin friction decomposition methods, their decomposed constituents are discussed and compared for different Reynolds numbers.The integrands of the decomposed constituents are locally analyzed across the boundary layer to assess the actions associated with the inhomogeneity and multi-scale nature of turbulent motion. The scaling of the decomposed constituents and their integrands are presented. In addition, the boundary layer is divided into three sub-regions to evaluate the contributive proportion of each sub-region with an increase in the Reynolds number.

Bonding effect on channeling of C ions in a carbon nanotube

The channeling phenomenon of carbon ions in single-wall carbon nanotubes (SWCNTs) is investigated by using the molecular dynamics simulation with analytical potentials.The relationship between the channeling critical angles in the SWCNT and the bonding interaction is analyzed.It was found that,at 200-5000 eV and 10°-20° of incident angle,the ions with the bonding interaction or chemical effect,have decreased dechanneling probabilities and increased critical angles,compared to that of non-bonding ions.So the bonding effect cannot be ignored in the channeling mechanism of carbon ions through a SWCNT.

High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification

This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafiuorophthalocyaninatocopper （F16CuPc）/copper phthalocyanine （CuPc） and F16CuPc/pentacene as the active layers. Compared with a single-layer device, it reports that an improved field-effect mobility and a 6-fold higher drain current are observed. The highest mobility of 0.081 cm^2/（V. s） was obtained from F16CuPc/CuPc heterojunction devices. This result is attributed to the dual effects of the organic heterojunction and interface modification. Furthermore, for two heterojunction devices, the performance of the F16CuPc/CuPc-based transistor is better than that of F16CuPc/pentacene. This is attributed to the morphologic match of two organic components.

Effective Channel Length Degradation under Hot-Carrier Stressing

This article describes the effective channel length degradation under hot carrier stressing. The extraction is based on the IDs-Vcs characteristics by maximum transconductance （maximum slope of IDs ＆ VGS） in the linear region. The transconductance characteristics are determine for the several devices of difference drawn channel length. The effective channel length of submicron LDD （Lightly Doped Drain） NMOSFETs （Metal Oxide Semiconductor Field Effect Transistor） under hot carrier stressing was measured at the stress time varying from zero to 10,000 seconds. It is shown that the effective channel length was increased with time. This is caused by charges trapping in the oxide during stress. The increased of effective channel length （△Leff） is seem to be increased sharply as the gate channel length is decrease.

Numerical Prediction of Wall Effect on Propeller in Restricted Channel

In restricted channel, the hydrodynamic performance of propeller is affected by the wall. In the present work, two cylindrical channels with different diameters being 1.8D and 5.0D are adopted to study the influence of wall on the hydrodynamic performance and wake field of the propeller model DTMB4119. The numerical simulations are carried out by the single-phase solver pimpleDyMFoam in open source platform OpenFOAM. The Reynolds Averaged Navier-Stokes equations (RANS) are adopted to solve the flow field. The arbitrary mesh interface (AMI) method is used to simulate the rotation of propeller. The designed advance ratio, J = 0.833, is applied in all the computations. For the 5.0 D case, the predicted results of open water performance are in good agreement with experiment data. In restricted channel, the predicted results of thrust and torque coefficients are larger than the open water case. The pressure on the wall of restricted channel downstream increases and approaches the results in open water gradually. Due to the flux conservation, higher negative induced velocity is investigated in the flow field of the propeller in restricted channel.

The study on mechanism and model of negative bias temperature instability degradation in P-channel metal-oxide-semiconductor field-effect transistors

Negative Bias Temperature Instability （NBTI） has become one of the most serious reliability problems of metaloxide-semiconductor field-effect transistors （MOSFETs）. The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25-0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction-diffusion model with H^＋ related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H^＋ generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H^＋ generated during NBTI stress.

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In_(0.18) Al_(0.82) N/AlN/GaN heterostructure field-effect transistors

By making use of the quasi-two-dimensional （quasi-2D） model, the current-voltage （l-V） characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors （HFETs） with different gate lengths are simulated based on the measured capacitance-voltage （C-V） characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas （2DEG） with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.

5G Oriented Exponential Effective Signal to Interference plus Noise Ratio Mapping Algorithm Based on Channel Classification

In the future the fifth generation( 5 G) communication systems,channel models may be very complicated and it is difficult to calculate equivalent signal to interference plus noise ratio( SINR)of a random fading channel. Therefore,methods for the calculation of equivalent SINR of a random fading channel are very necessary.In this paper,an enhanced algorithm on the exponential effective SINR mapping( EESM) model for random fading channels was proposed. First, the optimal adjustment parameters of typical channel fading models including extended pedestrian A( EPA)model,extended vehicular A( EVA) model and extended typical urban( ETU) model were obtained by simulation. Then the proposed solution was used to actualize channel classification according to the maximum multipath delay and the average power of the random channel. The solution can determine the typical channel closest to random channel for obtaining the optimal adjustment value of EESM. The evaluation results indicate that the proposed one can improve the whole system throughput significantly and meanwhile the accuracy of the link prediction algorithm is also guaranteed.