The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantu...The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.展开更多
Large-signal modulation capability, as an important performance indicator, is directly related to the high-speed optical communication technology involved. We experimentally and theoretically investigate the large-sig...Large-signal modulation capability, as an important performance indicator, is directly related to the high-speed optical communication technology involved. We experimentally and theoretically investigate the large-signal modulation characteristics of the simultaneous ground-state （GS） and the excited-state （ES） lasing in InAs/OaAs quantum dot laser diodes. The large-signal modulation capability of total light intensity in the transition regime from OS lasing to two-state lasing is unchanged as the bias-current increases. However, GS and ES large-signal eye diagrams show obvious variations during the transition. Relaxation oscillations and large-signal eye diagrams for OS, ES, and total light intensities are numerically simulated and analyzed in detail by using a rate-equation model. The -ndings show that a complementary relationship between the light intensities for OS and ES lasing exists in both the transition regime and the two-state lasing regime, leading to a much smaller overshooting power and a shorter settling time for the total light intensity. Therefore, the eye diagrams of GS or ES lasing are diffuse whereas those of total light intensity are constant as the bias-current increases in the transition regime.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11434010,11574356 and 11504415the Funds from the Royal Society,the Defense Science Technology Laboratory and UK Engineering and Physics Research Council
文摘The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.
基金Supported by the National Key Research and Development Program of China under Grant No 2016YFB0402302the National Natural Science Foundation of China under Grant No 91433206
文摘Large-signal modulation capability, as an important performance indicator, is directly related to the high-speed optical communication technology involved. We experimentally and theoretically investigate the large-signal modulation characteristics of the simultaneous ground-state （GS） and the excited-state （ES） lasing in InAs/OaAs quantum dot laser diodes. The large-signal modulation capability of total light intensity in the transition regime from OS lasing to two-state lasing is unchanged as the bias-current increases. However, GS and ES large-signal eye diagrams show obvious variations during the transition. Relaxation oscillations and large-signal eye diagrams for OS, ES, and total light intensities are numerically simulated and analyzed in detail by using a rate-equation model. The -ndings show that a complementary relationship between the light intensities for OS and ES lasing exists in both the transition regime and the two-state lasing regime, leading to a much smaller overshooting power and a shorter settling time for the total light intensity. Therefore, the eye diagrams of GS or ES lasing are diffuse whereas those of total light intensity are constant as the bias-current increases in the transition regime.
