A three-dimensional finite element model for phase change random access memory （PCRAM） is established for comprehensive electrical and thermal analysis during SET operation. The SET behaviours of the heater additio...A three-dimensional finite element model for phase change random access memory （PCRAM） is established for comprehensive electrical and thermal analysis during SET operation. The SET behaviours of the heater addition structure （HS） and the ring-type contact in bottom electrode （RIB） structure are compared with each other. There are two ways to reduce the RESET current, applying a high resistivity interracial layer and building a new device structure. The simulation resuIts indicate that the variation of SET current with different power reduction ways is little. This study takes the RESET and SET operation current into consideration, showing that the RIB structure PCRAM cell is suitable for future devices with high heat efficiency and high-density, due to its high heat efficiency in RESET operation.展开更多
Recently,two dimensional transition metal dichalcogenides MX_2(M = Mo,W,etc; X = S,Se,Te) have ignited immense interests because of their unique structural and physical properties for the potential applications in the...Recently,two dimensional transition metal dichalcogenides MX_2(M = Mo,W,etc; X = S,Se,Te) have ignited immense interests because of their unique structural and physical properties for the potential applications in the nano-optoelectronics,valley-spintronics etc. In terms of the structural compatibility and van der Waals interaction,two dimensional(2D) MX_2 layers can be fabricated into various lateral and vertical hetero-structures. The atomically-thin hetero-structures comprising different layered MX_2 provide a new platform for exploring fundamental physics and device technologies with unprecedented phenomenon and extraordinary functionalities. In this review,we report the recent progress about the fabrication,properties and applications of 2D hetero-structures based on transition metal dichalcogenides.展开更多
文摘A three-dimensional finite element model for phase change random access memory （PCRAM） is established for comprehensive electrical and thermal analysis during SET operation. The SET behaviours of the heater addition structure （HS） and the ring-type contact in bottom electrode （RIB） structure are compared with each other. There are two ways to reduce the RESET current, applying a high resistivity interracial layer and building a new device structure. The simulation resuIts indicate that the variation of SET current with different power reduction ways is little. This study takes the RESET and SET operation current into consideration, showing that the RIB structure PCRAM cell is suitable for future devices with high heat efficiency and high-density, due to its high heat efficiency in RESET operation.
基金supported by the joint fund of the National Natural Science Foundation Committee of China Academy of Engineering Physics(U1630108)the National Natural Science Foundation of China(21373196,11434009)
文摘Recently,two dimensional transition metal dichalcogenides MX_2(M = Mo,W,etc; X = S,Se,Te) have ignited immense interests because of their unique structural and physical properties for the potential applications in the nano-optoelectronics,valley-spintronics etc. In terms of the structural compatibility and van der Waals interaction,two dimensional(2D) MX_2 layers can be fabricated into various lateral and vertical hetero-structures. The atomically-thin hetero-structures comprising different layered MX_2 provide a new platform for exploring fundamental physics and device technologies with unprecedented phenomenon and extraordinary functionalities. In this review,we report the recent progress about the fabrication,properties and applications of 2D hetero-structures based on transition metal dichalcogenides.
