Small-Signal Equivalent Circuit Modeling of a Photodetector Chip

A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance into consideration,is first determined based on the device＇s physical structure. The photodetector＇s S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip＇s high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits.

Small Signal Equivalent Circuit Model and Modulation Properties of Vertical Cavity-Surface Emitting Lasers

Small signal equivalent circuit model and modulation properties of vertical cavity surface emitting lasers(VCSEL's) are presented.The modulation properties both in analytic equation calculation and in circuit model simulation are studied.The analytic equation calculation of the modulation properties is calculated by using Mathcad program and the circuit model simulation is simulated by using Pspice program respectively.The results of calculation and the simulation are in good agreement with each other.Experiment is performed to testify the circuit model.

Simulation of second-order RC equivalent circuit model of lithium battery based on variable resistance and capacitance

With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in this paper.The ampere-hour(Ah)integration method based on external characteristics is analyzed,and the open-circuit voltage(OCV)method is studied.The two methods are combined to estimate SOC.Considering the accuracy and complexity of the model,the second-order RC equivalent circuit model of lithium battery is selected.Pulse discharge and exponential fitting of lithium battery are used to obtain corresponding parameters.The simulation is carried out by using fixed resistance capacitance and variable resistance capacitor respectively.The accuracy of variable resistance and capacitance model is 2.9%,which verifies the validity of the proposed model.

Small Signal Circuit Model of Double Photodiodes

The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given.From analysis on the frequency domain of the circuit model the device has two poles.One has the relationship with junction capacitance and the DPD’s load,the other with the depth and the doping concentration of the N-well in the DPD.Different depth of the N-well and different area of the DPDs with bandwidth were compared.The analysis results are important to design the high speed DPDs.

Parametric Modeling of Circuit Model for AC Glow Discharge in Air

In the parametric modeling of the circuit model for glow discharge in air,a new method for the design of glow discharge circuit model is presented.The new circuit model is an important reference for the design of plasma power supply,the simulation of glow discharge plasma actuator and the simulation of glow discharge plasma anemometer.The modeling approach consists in developing an electrical model of the glow discharge in air based on circuit components.The structure of the circuit model is established according to the theoretical analysis and the experimental device.Then the parameters of the circuit model are obtained based on the circuit analysis.Finally,the circuit model is verified by comparing the simulation current with the experimental current.This model takes into account the whole framework of the air glow discharge including the sheath and the plasma area.The built circuit model is feasible and reliable,thus being instructive for the investigation of the glow discharge in air.

An equivalent circuit model for terahertz quantum cascade lasers:Modeling and experiments

Terahertz quantum cascade lasers（THz QCLs） emitted at 4.4 THz are fabricated and characterized. An equivalent circuit model is established based on the five-level rate equations to describe their characteristics. In order to illustrate the capability of the model, the steady and dynamic performances of the fabricated THz QCLs are simulated by the model.Compared to the sophisticated numerical methods, the presented model has advantages of fast calculation and good compatibility with circuit simulation for system-level designs and optimizations. The validity of the model is verified by the experimental and numerical results.

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent.We present an InP HEMT extrinsic parasitic equivalent circuit,in which the conductance between the device electrodes and a new gate-drain mutual inductance term L_(mgd)are taken into account for the high-frequency magnetic field coupling between device electrodes.Based on the suggested parasitic equivalent circuit,through HFSS and advanced design system(ADS)co-simulation,the equivalent circuit parameters are directly extracted in the multi-step system.The HFSS simulation prediction,measurement data,and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit.The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.

Study of the selective effect on cells induced by nanosecond pulsed electric field with the resistor-capacitor circuit model

A resistor-capacitor(RC)circuit model is proposed to study the effect of nanosecond pulsed electricfield on cells according to the structure and electrical parameters of cells.After a nanosecond step fieldhas been applied,the variation of voltages across cytomembrane and mitochondria membrane both in nor-mal and in malignant cells are studied with this model.The time for selectively targeting the mitochondriamembrane and malignant cell can be evaluated much easily with curves that show the variation of voltageacross each membrane with time.Ramp field is the typical field applied in electrobiology.The voltagesacross each membrane induced by ramp field are analyzed with this model.To selectively target the mito-chondria membrane,proper range of ramp slope is needed.It is relatively difficult to decide the range ofa slope to selectively affect the malignant cell.Under some conditions,such a range even does not exist.

Evaluation of the Capacitance and Charge Distribution for Conducting Bodies by Circuit Modelling

This paper presents a numerical analysis for computation of free space capacitance of different arbitrarily shaped conducting bodies based on the finite element method with triangular subsection modeling. Evaluation of capacitance of different arbitrary shapes is important for the electrostatic analysis. Capacitance computation is an important step in the prediction of electrostatic discharge which causes electromagnetic interference. We specifically illustrated capacitance computation of electrostatic models like unit cube, rectangular plate, triangular plate, T-shaped plate, sphere and two touching spheres. Numerical data on the capacitance of conducting objects are presented. The results are compared with other available results in the literature. We used the COMSOL Multiphysics software for the simulation. The models are designed in three-dimensional form using electrostatic environment and can be applied to any spacecraft circuit modeling design. The findings of this study show that the finite element method is a more accurate method and can be applied to any circuit modeling design.

Circuit Model of 100 Ah Lithium Polymer Battery Cell

This paper presents a circuit model for a 100 Ah Lithium Polymer Battery that takes into account the effect of temperature and discharge rates. This is done by studying the behavior of two advanced 100 Ah Lithium Polymer Battery cells under different load condition and at different temperatures, to extract the RC parameters needed to develop the equivalent circuit model. This paper presents a methodology to identify the several parameters of the model. The parameters of the circuit model depend on both, battery cell temperature and discharging current rate. The model is validated by comparing simulation results with experimental data collected through battery cell tests. The simulation results of the battery cell model are obtained using MATLAB, and the experimental data are collected through the battery test system at battery evaluation lab at University of Massachusetts Lowell. This model is useful for optimization of the battery management system which is needed to run a battery bank safely in an electric car.

A PSpice Circuit Model for Single-Photon Avalanche Diodes

In this paper, we present an improved circuit model for single-photon avalanche diodes without any convergence problems. The device simulation is based on Orcad PSpice and all the employed components are available in the standard library of the software. In particular, an intuitionistic and simple voltage-controlled current source is adopted to characterize the static behavior, which can better represent the voltage-current relationship than traditional model and reduce computational complexity of simulation. The derived can implement the self-sustaining, self-quenching and the recovery processes of the SPAD. And the simulation shows a reasonable result that the model can well emulate the avalanche process of SPAD.

Analysis for Transmission of Composite Structure with Graphene Using Equivalent Circuit Model

A simple analytical method is presented to analyze the transmission of electromagnetic plane waves through multilayer stacked composite two-dimensional( 2D) structures at microwave frequencies. Unlike the traditional structure,high impedance surface with graphene sheet is proposed. The structure includes graphene and thin metal patches and meshes. Simple analytical formulas are introduced for the surface impedance of graphene and for the grid impedance of electrically dense arrays of metal square patches or strips. The result of transmission properties is based on the dynamic tunable model of the high impedance surface,which considers the surface conductivity of graphene layer. The transmission coefficient obtained by using the equivalent circuit method is validated against full-wave numerical simulations. The considered equivalent circuit method can be useful in the design of graphene tunable planar devices.

Scalable wideband equivalent circuit model for silicon-based on-chip transmission lines

A scalable wideband equivalent circuit model of silicon-based on-chip transmission lines is presented in this paper along with an efficient analytical parameter extraction method based on improved characteristic function approach,including a relevant equation to reduce the deviation caused by approximation.The model consists of both series and shunt lumped elements and accounts for high-order parasitic effects.The equivalent circuit model is derived and verified to recover the frequency-dependent parameters at a range from direct current to 50 GHz accurately.The scalability of the model is proved by comparing simulated and measured scattering parameters with the method of cascade,attaining excellent results based on samples made from CMOS 0.13 and 0.18 μm process.

Two-port Equivalent Circuit Model for UHVDC Converter Valves

UHVDC converter valves during operation may experience overvoltage,which come from the AC or DC systems to which they are connected.Therefore,building an equivalent circuit model(ECM)for the converter valve to analyze the interlayer transient voltage distribution characteristics has important engineering significance for safe and reasonable voltage equalization methods and improving the stability of the DC system.This paper proposes a two-port equivalent circuit model for ±1100 kV converter valve based on the structure of the valve and parameter extraction methods presented.In terms of lumped parameters,integrated ECMs for valve layers are built through impedance-frequency characteristic analysis;in terms of parasitic capacitance parameters,port equivalent parasitic capacitance parameters are obtained by terminal capacitance method and iterative equivalence methods proposed in this paper.By combining integrated ECMs of valve layers and port equivalent parasitic capacitances,the two-port ECM is obtained.Simulations are carried out to test the effectiveness of the twoport ECM.Using the ECM,the voltage transmission characteristics and their influencing factors are analyzed,depending on which corresponding voltage equalization method is proposed in this paper,and the effect of this method is verified through simulation.

Simplified circuit model of disk-shaped traveling wave ultrasonic motor

This paper presents a method of establishing simplified equivalent circuit model of traveling wave ultrasonic motor by using 1/2 wavelength stator with the similar vibration characteristics. Combined with the vibration mode characteristics of the composite stator, the method utilizes Hamilton principle to obtain precise solution of the simplified equivalent circuit. The model shows the mechanism of ultrasonic motor, considering the influence of non-axisymmetric vibration mode, tooth outline, anisotropy of PZT (Piezoelectric ceramic), etc. With this method, various electric parameters corresponding to different vibration modes, such as static capacitance, dynamic capacitance, dynamic inductance, dynamic resistance, equivalent input impedance, etc., can be solved. Experiments show good agreement with theoretical results.

An improved single-π equivalent circuit model for on-chip inductors in GaAs process

An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.

Transverse wakefield calculated by the double circuit model

X-band accelerators for multi-bunches are a new way to produce high luminosity and energy efficiency bunches. The smaller the size and the more bunches, the more severe is the wakefield in the X-band accelerators, unless some means of strongly suppressing the transverse wakefield is adopted in the design of the accelerating structure. Here, the derivation of the wakefield function of the double circuit model and its application to the designed accelerator structure have been demonstrated.

An accurate RLGC circuit model for dual tapered TSV structure

A fast RLGC circuit model with analytical expression is proposed for the dual tapered through-silicon via （TSV） structure in three-dimensional integrated circuits under different slope angles at the wide frequency region. By describing the electrical characteristics of the dual tapered TSV structure, the RLGC parameters are extracted based on the numerical integration method. The RLGC model includes metal resistance, metal inductance, substrate resistance, outer inductance with skin effect and eddy effect taken into account. The proposed analytical model is verified to be nearly as accurate as the Q3D extractor but more efficient.

Intrinsic stability of an HBT based on a small signal equivalent circuit model

Intrinsic stability ofthe heterojunction bipolar transistor （HBT） was analyzed and discussed based on a small signal equivalent circuit model. The stability factor of the HBT device was derived based on a compact T-type small signal equivalent circuit model of the HBT. The effect of the mainly small signal model parameters of the HBT on the stability of the HBT was thoroughly examined. The discipline of parameter optimum to improve the intrinsic stability of the HBT was achieved. The theoretic analysis results of the stability were also used to explain the experimental results of the stability of the HBT and they were verified by the experimental results.

Analyzing the efects of post couplers in DTL tuning by the equivalent circuit model

Stabilization of the accelerating field in Drift Tube Linac（DTL） is obtained by inserting Post Couplers（PCs）. On the basis of the equivalent circuit model for the DTL with and without asymmetrical PCs, stabilization is deduced quantitatively： we let δω/ω0 be the relative frequency error, then we discover that the sensitivity of field to perturbation is proportional to √δω/ω0 without PCs and to δω/ω0 with PCs. Then we adapt the circuit model of symmetrical PCs for the case of asymmetrical PCs. The circuit model shows how the slope of field distribution is changed by rotating the asymmetrical PCs and illustrates that the asymmetrical PCs have the same effect as the symmetrical ones in stabilization.