Influence of Bath Composition on Magnetic Properties of Electrodeposited Co-Pt-W Thin Films

Effect of bath composition （[Co^2＋]/[-Pt^Ⅳ ] and [-WO4^2- ], [cit^-]） and pH on the magnetic properties of electrodeposited Co-Pt-W thin films has been investigated. Electrodeposited Co-Pt-W thin films exhibited strong perpendicular magnetic anisotropy when the ratio of [-Co^2＋ ] to [-Pt^Ⅳ ] was 10 ; cathode current efficiency and perpendicular magnetic anisotropy showed little variations when [WO4^2- ] was lower than 0. 1 mol/L, but perpendicular magnetic anisotropy had strengthened when [WO4^2-] was over 0. 1 mol/L, which could be explained by the fact that the hydrogen evolution could produce pores as magnetic domain pinnings; citrate as complexing reagent can promote the polarization of [Co^2＋] and [Pt^Ⅳ]. As a result, the equilibrium electrode potentials of cobalt and platinum moved to negative direction, which led to the co-deposition of Co, Pt, and W. It was also found out that the as-deposited Co- Pt-W hard magnetic thin films were very homogeneous, smooth, and had the maximum coercivity for the bath pH 8. 5 and the concentration of citrate 0. 26 mol/L.

MICROWAVE PERMEABILITY SPECTRA OF SPUTTERED Fe-Co-B SOFT MAGNETIC THIN FILMS

Permeability characteristics of sputtered soft magnetic Fe40Co40B20 thin films are investigated in the range of O. 5 to 5 GHz by a shortened microstrip transmission line perturbation method. Excellent microwave permeability is achieved at 0.4 Pa argon pressure： fr is 3.32 GHz, the real and imaginary part of permeability at 0.5 GHz are 104 and 61, respectively. In addition, the thickness effect on permeability is also studied. The minimum damping can be achieved at the thinnest film. Different sources contributed to in-plane anisotropy are discussed briefly. The deviation between the peak frequency of the imaginary part and the zero-crossing frequency of the real part of permeability is also presented.

Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by sol-gel spin coating

ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1：2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al distortion, and the biaxial stresses are 1.03× 10^8. 3.26× 10^8 and Sb are of wurtzite hexagonal ZnO with a very small 5.23 × 10^8, and 6.97× 10^8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5 Ω·cm.

Electrochemical preparation of Er-Co-Bi thin film in organic bath by cyclic electrodeposition method

Cyclic electrodeposition was used to investigate the preparation of Er-Co-Bi alloy thin film in DMSO system. Experimental results indicate that Er-Co-Bi alloy thin film containing 14.83 %32.65 % Er is prepared from 0.1 mol/L ErCl3+0.1 mol/L CoCl2+0.1 mol/L Bi（NO3）3+0.1 mol/L LiCl +DMSO system by cyclic electrodeposition on Cu substrate. The optimum cyclic potential of electrodeposition is that upper potential is within a potential range from -0.50 V to -1.00 V and lower potential is within a potential range from -2.00 V to )-2.60 V.) The surface of alloy thin film observed by scanning electron microscope is black, adhesive and has metallic luster. The film is amorphous proved by the X-ray diffractometry.

Influence of bath composition on the electrodeposition of cobalt-molybdenum amorphous alloy thin films

Cobalt-molybdenum （Co-Mo） amorphous alloy thin films were deposited on copper substrates by the electrochemical method at pH 4.0. Among the experimental electrodeposition parameters,only the concentration ratio of molybdate to cobalt ions （[MoO4^2-]/[Co^2＋]） was varied to analyze its influence on the mechanism of induced cobalt-molybdenum codeposition. Voltammetry was one of the main techniques,which was used to examine the voltammetric response,revealing that cobalt-molybdenum codeposition depended on the nature of the species in solution. To correlate the type of the film to the electrochemical response,various cobalt-molybdenum alloy thin films obtained from different [MoO4^2-]/[Co^2＋] solutions were tested. Crack-free homogeneous films could be easily obtained from the low molybdate concentrations （[MoO4^2-]/[Co^2＋]≈0.05） applying low deposition potentials. Moreover,the content of molybdenum up to 30wt% could be obtained from high molybdate concentration; in this case,the films showed cracks. The formation of these cracked films could be predicted from the observed distortions in the curves of electric current-time （j-t） deposition transients. The films with amorphous structure were obtained. The hysteresis loops suggested that the easily magnetized axis was parallel to the surface of the films. A saturation magnetization of 137 emu·g^-1 and a coercivity of 87 Oe of the film were obtained when the deposition potential was -1025mV,and [ MoO4^2-]/[Co^2＋] was 0.05 in solution,which exhibited a nicer soft-magnetic response.

Comparative studies on Zn_(0.95)Co_(0.05)O thin films on C- and R-sapphire substrates

Zn0.95Co0.05O precipitate-free single crystal thin films were synthesized by a dual beam pulsed laser deposition method. The films form a wurtzite structure whose hexagonal axis is perpendicular or parallel to the plane of the surface depending on the C-plane （0001） or R-plane （1120） sapphire substrate. Based on the results of high-resolution transmission electron microscopy and x-ray diffraction, C-plane films show larger lattice mismatch. The films exhibit magnetic and semiconductor properties at room temperature. The coercivity of the film is about 8000 A/m at room temperature. They are soft magnetic materials with small remanent squareness S for both crystal orientations. There is no evidence to show that the anisotropy is fixed to the hexagonal axis （C-axis） for the wurtzite structure.

Biodegradable Polylactide-co-glycolide (PLGA) Thin Films Prepared by Electrospray and Pressurized Spray Deposition

PLGA thin films were prepared onto implantable devices by the electrospray and pressurized spray method. Thin films with structural gradients were obtained by controlling four parameters consisting of solution concentration, applied voltage, air pressure , and deposition time. The surface morphologies of the deposited films were observed using scanning electron microscopy （SEM）. The image analysis revealed the control factors on the preparation of PLGA thin films. The beaded structure is ensily formed with a decrease in polymer concentration while the fibrous structure is easily formed with an increuse in polymer concentration. With the increase in applied voltage, the surface morphologies changed continnously from a small amount of fibrous shape to a large fibrous one： a small amount of.fibrous shape at 10 kV, more fibers with non-uniform diameter at 20 kV, and most fibers with uniform diameter at 30 kV. Low air pressure（0.1 MPa ） corresponded to round particles while high air pressure （0.3 MPa ） corresponded to fiat particles. The change in thickness from 5.34 to 10.1μm was a result of deposition time increasing from 5 to 10 s. From our above work, films of the bead or fiber structures can be obtained by changing electrical parameters to impropvc tbe biocompntibility of the film.

ELASTIC RECOIL DETECTION ANALYSIS OF LIGHT ELEMENTS IN THIN FILMS USING 35 MeV^(35) Cl^(6+) BEAM

In this paper, an elastic recoil detection analysis method is described using 35 MeV 35Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon.

Effects of Cu and Co Substitution on the Properties of NiZn Ferrite Thin Films

Cu- and Co-substituted NiZn ferrite thin films, Ni0.4-xZn0.6CuxFe2O4 and Ni0.5Zn0.5CoxFe2-xO4 （0≤x≤0.2）, are synthesized by sol-gel process. The crystallographic and magnetic properties of Cu- and Co-substituted NiZn ferrite thin films have been investigated. The lattice parameter decreases with Cu substitution and increases with Co substitution. The saturation magnetization decreases and the coereivity increases with the increase of Cu substitution. Moreover, the saturation magnetization gradually increases with the increase of Co substitution when x≤0.10, but decreases when x〉0.10. Meanwhile, the coereivity initially decreases with the increase of Co substitution when x≤0.10, but increases when x〉0.10.

Influence of Nanocrystallization on Magnetic Properties of the Co-Based Alloys Thin Films

The rapid recurrent thermal annealing (RRTA) method has been used to amorphous Co-Nb-Zr soft magnetic thin films fabricated by DC sputtering. By using this method, in this paper, the crystalline grains with diameter of about 30~90 nm are formed and the partial nanocrystallization of the films is realized. As a result, the soft magnetic properties of the Co-based nanocrystalline thin films are improved greatly after RRTA: their resistivity is a quarter decreased; the average initial permeability is enhanced from 3 500 to over 5 000; the impedance is increased form 20 ~100 ?(at 1.4 GHz); the resonance peak is moved about 200 MHz down to low frequency. The evident improvement enables the Co-based nanocrystalline thin films to be used over a much wide frequency range of 1 KHz ~1.5 GHz.

Synthesis and Characterization of Air-Stable Elemental Fe Thin Films by Chemical Vapor Deposition of Fe₃(CO)₁₂

New magnetic air-stable nanogranular Fe thin films of 10 ± 1.2 nm thickness were prepared onto silicon wafers at 150℃ under inert atmosphere by controlled Chemical Vapor Deposition (CVD) of triiron dodecacarbonyl (Fe3(CO)12). These thin films, composed of sintered elemental Fe nanoparticles of 4.1 ± 0.7 nm diameter, are protected from air oxidation by a very thin carbon layer. The saturation magnetization of these thin Fe coatings was found to be close to that of bulk iron. The electrical resistivity behavior of the ferromagnetic thin films is similar to that of a semiconductor. In the present manuscript, these Fe thin coatings on Si wafers have been used as a catalyst for synthesizing crystalline carbon nanotubes (CNTs), by CVD using ethylene as a carbon precursor.

Optical study of Ba(Mn_xTi_(1-x)O_3) thin films by spectroscopic ellipsometry

Stoichiometric Ba（MnxTi（1-x）O3） （BMT） thin films with various values of x were deposited on Si（111） substrates by the sol-gel technique. The influence of Mn content on the optical properties was studied by spectroscopic ellipsometry （SE） in the UV–Vis–NIR region. By fitting the measured ellipsometric parameter （Ψ and Δ） with a four-phase model （air/BMT＋voids/BMT/Si（111））, the key optical constants of the thin films have been obtained. It was found that the refractive index n and the extinction coefficient k increase with increasing Mn content due to the increase in the packing density. Furthermore, a strong dependence of the optical band gap Eg on Mn/Ti ratios in the deposited films was observed, and it was inferred that the energy level of conduction bands decreases with increasing Mn content.

Microstructure and magnetic properties of Ti/Co/Ti films

The two series of as-deposited and annealed Ti/Co/Ti thin films were deposited by magnetron sputtering onto glass substrates at room temperature. The structural and magnetic properties of the films at room temperature were investigated as function of Co layer thickness. X-ray diffraction (XRD) profiles show Co nanograins are formed as the hexagonal-close-packed (hcp) structure. The perpendicular coercivity of the Ti(15 nm)/Co(30 nm)/Ti(15 nm) film annealed at 450 ℃ for 30 min is about 288 kA·m-1.

Fabrication and Luminescence Properties of Eu^(3+) Doped SiO_2 Thin Films

Rare earth doped silica films were prepared by sol-gel method accompanied with the spin-coating process. It was found that the photoluminescence (PL) property of the thin films was dependent strongly on the doping amount of Eu3+. For thin films annealed at 700 ℃, the PL intensity increased constantly as elevating the doping amount up to 10% without any evident concentration quench, which indicated the good doping property of the SiOmatrix. In order to further improve the PL efficiency, co-doping of Tb3+ into SiO∶Eu3+ thin films were also investigated. It was found that the luminescence intensity was obviously enhanced by co-doping which could be explained in terms of the effective energy transfer from Tb3+ to Eu3+.

硫酸钴浓度对电沉积Co-W-P薄膜结构与磁性能的影响

在20#钢基体上电沉积Co-W-P薄膜,并研究镀液中硫酸钴浓度对Co-W-P薄膜的结合强度、结构、成分、厚度和磁性能的影响。结果表明:Co-W-P薄膜与20#钢基体结合紧密,随着硫酸钴浓度从5 g/L增至25 g/L,Co-W-P薄膜的结构和物相无明显变化,但平均晶粒尺寸呈现先减小后增大的趋势,Co元素的质量分数呈现先升高后降低的趋势,导致不同Co-W-P薄膜的致密性和磁性能存在差异。当硫酸钴浓度为15 g/L时,Co-W-P薄膜的平均晶粒尺寸仅为40.6 nm,Co元素的质量分数达到64.19%,具有最大的矫顽力(932 A/m)和饱和磁化强度(100.7 A·m2·kg-1),其结构致密并且展现出良好的磁性能。在一定范围内硫酸钴浓度的增加,降低了成核过电位,使晶粒细化且结合紧密,同时提高了钴还原沉积效率,使Co元素的质量分数升高。研究表明:晶粒细化、致密性改善以及磁性元素的协同作用进一步提高了Co-W-P薄膜的磁性能。

Various Metal Sandwich Layer Oriented Efficiency Enhancement Superiority on CuInGaSe2 Thin Film Solar Cells

The good quality CuInGaSe2 (CIGS) thin film solar cells were fabricated on molybdenum metal coated soda lime glass substrate. Three-stage co-evaporation method was utilized for the fabrication of high quality p-type CIGS thin film absorber layer. Further, n-type CdS layer, high resistive intrinsic ZnO layer and transparent conducting AlZnO layers were fabricated by CBD method and vacuum sputtering methods. We made three various top metal sandwich grid patterns, i.e. Al, Al/Cu and Cu/Al which were utilized to investigate the metal sandwich layer oriented efficiency enhancement superiority on CuInGaSe2 thin film solar cells. The investigated specific CIGS solar cell device efficiency with respect to various top metal grid sandwich patterns is presented and discussed.

一种双靶磁控溅射制备的Mg掺杂的NiO薄膜

采用磁控溅射“共溅射”方法,将Ar气作为溅射气体,高纯NiO和MgO双陶瓷靶作为溅射靶材。当控制NiO和MgO靶的溅射功率分别为190 W和580 W,溅射真空度为2 Pa,衬底温度为300℃时,得到了Mg掺杂的NiO(Ni_(0.61)Mg_(0.39)O)薄膜。该薄膜是一种具有(200)择优取向的晶态薄膜。薄膜表面比较平整,晶粒分布致密,晶粒尺寸约46.9 nm。(200)衍射峰位置相对未掺杂的NiO薄膜向小角度偏移约0.2°。合金薄膜在可见光波段具有较大的透过率,而在300 nm附近透过率陡然下降,其光学带隙向高能方向移动到了3.95 eV。该研究为采用磁控溅射制备高质量的Mg掺杂的NiO薄膜提供了技术支撑。

空心微球表面化学镀Co/Co-Fe薄膜制备及其微波吸收性能

以Sn-Pd胶体溶液为活化剂,对空心微球的表面进行活化,并采用化学镀工艺,在其表面分别镀Co和Co-Fe薄膜。利用扫描电子显微镜(SEM)、能量散射谱(EDS)和X-射线衍射仪(XRD)分别对镀膜前后的空心微球进行表征,用网络矢量分析仪测试镀膜后空心微球的电磁损耗和微波吸收性能。结果表明:经过活化后的空心微球表面分别淀积了均匀、致密的Co和Co-Fe薄膜。改性后的空心微球在2～18GHz的频率范围内对电磁波有不同程度的吸收,具有宽频的吸收特性。

Co和Cu薄膜电学特性和连续性特征的判据

采用离子束溅射沉积了不同厚度的Co膜和Cu膜,利用四电极法测量了薄膜的电阻率,从而得到了Co膜和Cu膜的电导率随薄膜厚度的变化关系。实验结果表明,Co膜和Cu膜的电学特性都具有明显的尺寸效应。比较了同时考虑表面散射和晶界散射的电导理论得到的电导率公式与实验结果,不同薄膜厚度电导率的理论结果与实验结果符合较好。提出了厚度作为金属薄膜生长从不连续膜进入连续膜的一个特征判据,并利用原子力显微镜(AFM)观测了膜厚在特征厚度附近的Co膜和Cu膜的表面形貌。

化学镀Co-P薄膜的磁性及研究

采用化学镀法制备了Co-P磁记录薄膜。当薄膜厚度为0.3μm时,矫顽力可达4.54×104A/m,剩余磁化强度为0.068T。X射线衍射分析表明,当Co-P薄膜较薄时,薄膜结构中无明显择优取向,晶粒较小,此时矫顽力较高;当厚度增加至3-4μm以上时,结构中择优取向明显,晶粒较大,此时薄膜的矫顽力较低。将其应用于磁旋转编码器的磁鼓记录介质,制成直径Φ40mm的磁鼓,当原始充磁磁极对数为512时,脉冲计数完整,输出信号强,波形稳定。