Gate-Capacitance-Shift Approach and Compact Modeling for Quantum Mechanical Effects in Poly-Gates

A new approach,gate-capacitance-shift (GCS) approach,is described for compact modeling.This approach is piecewise for various physical effects and comprises the gate-bias-dependent nature of corrections in the nanoscale regime.Additionally,an approximate-analytical solution to the quantum mechanical (QM) effects in polysilicon (poly)-gates is obtained based on the density gradient model.It is then combined with the GCS approach to develop a compact model for these effects.The model results tally well with numerical simulation.Both the model results and simulation results indicate that the QM effects in poly-gates of nanoscale MOSFETs are non-negligible and have an opposite influence on the device characteristics as the poly-depletion (PD) effects do.

New Method of Total Ionizing Dose Compact Modeling in Partially Depleted Silicon-on-Insulator MOSFETs

On the basis of a detailed discussion of the development of total ionizing dose （TID） effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide- semiconductor field effect transistors is developed. An exponential approximation is proposed to simplify the trap charge calculation. Irradiation experiments with 60Co gamma rays for IO and core devices are performed to validate the simulation results. An excellent agreement of measurement with the simulation results is observed.

Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

A compact model for the integrated inversion charge density Qi in double-gate （DG-） MOSFETs is developed. For nanoscale applications,quantum confinement of the inversion carriers must be taken into account. Based on the previous work of Ge, we establish an expression for the surface potential with respect to Qi, and form an implicit equation, from which Qi can be solved. Results predicted by our model are compared to published data as well as results from Schred,a popular 1D numerical solver that solves the Poisson＇s and Schr6dinger equa- tions self-consistently. Good agreement is obtained for a wide range of silicon layer thickness,confirming the supe- riority of this model over previous work in this field.

A review for compact model of graphene field-effect transistors

Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors （FETs） have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modem IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to the charge sheet model, drift-diffusion model, Boltzmann equation, density of states （DOS）, and surface-potential-based compact model. Finally, an outlook of this field is briefly discussed.

BSIM-CMG Compact Model for IC CAD: from FinFET to Gate-All-Around FET Technology

We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate(CMG)device.This is an industry standard model which has been used extensively for FinFETs IC design and simulation,and has now been extended to accurately model gate-allaround FET(GAAFET).We present the core framework of BSIM-CMG and discuss the latest updates that capture various physical phenomena originating from the quantum confinement of electrons by the small cross section of the GAAFET channel.Special attention is paid to providing suitable model parameters that can be adjusted using software tools to match the model with manufactured transistors very accurately.Furthermore,the model’s speed allows the use of Monte Carlo circuit simulation to account for random device variations encountered in manufacturing.This model is the industry standard compact model for GAAFETs and will help bridge the wide divide between GAA IC manufacturing and design,starting at 3nm/2nm technologies.

A review of compact modeling for phase change memory

Phase change memory(PCM)attracts wide attention for the memory-centric computing and neuromorphic comput-ing.For circuit and system designs,PCM compact models are mandatory and their status are reviewed in this work.Macro mod-els and physics-based models have been proposed in different stages of the PCM technology developments.Compact model-ing of PCM is indeed more complex than the transistor modeling due to their multi-physics nature including electrical,thermal and phase transition dynamics as well as their interactions.Realizations of the PCM operations including threshold switching,set and reset programming in these models are diverse,which also differs from the perspective of circuit simulations.For the purpose of efficient and reliable designs of the PCM technology,open issues and challenges of the compact modeling are also discussed.

Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs

In this work,a surface-potential based compact model focusing on the quantum confinement effects of ultimately scaled gate-all-around(GAA)MOSFET is presented.Energy quantization with sub-band formation along the radius direction of cylindrical GAAs or thickness direction of nanosheet GAAs leads to significant quantization effects.An analytical model of surface potentials is developed by solving the Poisson equation with incorporating sub-band effects.In combination with the existing transport model framework,charge-voltage and current-voltage formulations are developed based on the surface potential.The model formulations are then extensively validated using TCAD numerical simulations as well as Si data of nanosheet GAA MOSFETs.Simulations of typical circuits verify the model robustness and convergence for its applications in GAA technology.

Compact Threshold Voltage Model for FinFETs

A 2D analytical electrostatics analysis for the cross-section of a FinFET (or tri-gate MOSFET) is performed to calculate the threshold voltage.The analysis results in a modified gate capacitance with a coefficient H introduced to model the effect of tri-gates and its asymptotic behavior in 2D is that for double-gate MOSFET.The potential profile obtained analytically at the cross-section agrees well with numerical simulations.A compact threshold voltage model for FinFET,comprising quantum mechanical effects,is then proposed.It is concluded that both gate capacitance and threshold voltage will increase with a decreased height,or a decreased gate-oxide thickness of the top gate,which is a trend in FinFET design.

A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices

A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure,only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources.It completely considers the following effects：non-linear conductivity,geometry dependence of sensitivity,temperature drift,lateral diffusion,and junction field effect.The model has been implemented in Verilog-A hardware description language and was successfully performed in a Cadence Spectre simulator.The simulation results are in good accordance with the classic experimental results reported in the literature.

Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors

Three main ambipolar compact models for Two-Dimensional(2D)materials based Field-Effect Transistors(2D-FETs)are reviewed:(1)Landauer model,(2)2D Pao-Sah model,and(3)virtual Source Emission-Diffusion(VSED)model.For the Landauer model,the Gauss quadrature method is applied,and it summarizes all kinds of variants,exhibiting its state-of-art.For the 2D Pao-Sah model,the aspects of its theoretical fundamentals are rederived,and the electrostatic potentials of electrons and holes are clarified.A brief development history is compiled for the VSED model.In summary,the Landauer model is naturally appropriate for the ballistic transport of short channels,and the 2D Pao-Sah model is applicable to long-channel devices.By contrast,the VSED model offers a smooth transition between ultimate cases.These three models cover a fairly completed channel length range,which enables researchers to choose the appropriate compact model for their works.

A novel compact model for on-chip stacked transformers in RF-CMOS technology

A novel compact model for on-chip stacked transformers is presented.The proposed model topology gives a clear distinction to the eddy current,resistive and capacitive losses of the primary and secondary coils in the substrate.A method to analytically determine the non-ideal parasitics between the primary coil and substrate is provided.The model is further verified by the excellent match between the measured and simulated S-parameters on the extracted parameters for a 1：1 stacked transformer manufactured in a commercial RF-CMOS technology.

Numerical modeling and simulation of metal powder compaction of balancer

The constitutive relation of powder material was derived based on the assumption that metal powder is a kind of elasto-plastic material, complying with an elliptical yield criterion. The constitutive integration algorithm was discussed. A way to solve the elastic strain increment in each iteration step during elasto-plastic transition stage was formulated. Different integration method was used for elastic and plastic strain. The relationship between model parameters and relative density was determined through experiments. The model was implemented into user-subroutines of Marc. With the code, computer simulations for compaction process of a balancer were performed. The part is not axisymmetric and requires two lower punches and one upper punch to form. The relative density distributions of two design cases, in which different initial positions of the punches were set, were obtained and compared. The simulation results indicate the influence of punch position and movement on the density distribution of the green compacts.

BSIM Model Research and Recent Progress

The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California, Berkeley,including BSIM5 research, BSIM4 enhancements, and BSIMSOI development. BSIM5 addresses the needs of nano-CMOS technology and RF high-speed CMOS circuit simulation. BSIM4 is a mature industrial standard MOSFET model with several improvements to meet the technology requirements. BSIMSOI is developed into a generic model framework for PD and FD SOI technology. An operation mode choice,via the calculation of the body potential △Vbi and body current/charge,helps circuit designers in the trend of the coexistence of PD and FD devices.

On Numerical Modelling of Industrial Powder Compaction Processes for Large Deformation of Endochronic Plasticity at Finite Strains

Compaction processes are one the most important par ts of powder forming technology. The main applications are focused on pieces for a utomotive, aeronautic, electric and electronic industries. The main goals of the compaction processes are to obtain a compact with the geometrical requirements, without cracks, and with a uniform distribution of density. Design of such proc esses consist, essentially, in determine the sequence and relative displacements of die and punches in order to achieve such goals. A.B. Khoei presented a gener al framework for the finite element simulation of powder forming processes based on the following aspects; a large displacement formulation, centred on a total and updated Lagrangian formulation; an adaptive finite element strategy based on error estimates and automatic remeshing techniques; a cap model based on a hard ening rule in modelling of the highly non-linear behaviour of material; and the use of an efficient contact algorithm in the context of an interface element fo rmulation. In these references, the non-linear behaviour of powder was adequately desc ribed by the cap plasticity model. However, it suffers from a serious deficiency when the stress-point reaches a yield surface. In the flow theory of plasticit y, the transition from an elastic state to an elasto-plastic state appears more or less abruptly. For powder material it is very difficult to define the locati on of yield surface, because there is no distinct transition from elastic to ela stic-plastic behaviour. Results of experimental test on some hard met al powder show that the plastic effects were begun immediately upon loading. In such mater ials the domain of the yield surface would collapse to a point, so making the di rection of plastic increment indeterminate, because all directions are normal to a point. Thus, the classical plasticity theory cannot deal with such materials and an advanced constitutive theory is necessary. In the present paper, the constitutive equations of powder materials will be discussed via an endochronic theory of plasticity. This theory provides a unifi ed point of view to describe the elastic-plastic behaviour of material since it places no requirement for a yield surface and a ’loading function’ to disting uish between loading an unloading. Endochronic theory of plasticity has been app lied to a number of metallic materials, concrete and sand, but to the knowledge of authors, no numerical scheme of the model has been applied to powder material . In the present paper, a new approach is developed based on an endochronic rate independent, density-dependent plasticity model for describing the isothermal deformation behavior of metal powder at low homologous temperature. Although the concept of yield surface has not been explicitly assumed in endochronic theory, it is shown that the cone-cap plasticity yield surface (Fig.1), which is the m ost commonly used plasticity models for describing the behavior of powder materi al can be easily derived as a special case of the proposed endochronic theory. Fig.1 Trace of cone-cap yield function on the meridian pl ane for different relative density As large deformation is observed in powder compaction process, a hypoelastic-pl astic formulation is developed in the context of finite deformation plasticity. Constitutive equations are stated in unrotated frame of reference that greatly s implifies endochronic constitutive relation in finite plasticity. Constitutive e quations of the endochronic theory and their numerical integration are establish ed and procedures for determining material parameters of the model are demonstra ted. Finally, the numerical schemes are examined for efficiency in the model ling of a tip shaped component, as shown in Fig.2. Fig.2 A shaped tip component. a) Geometry, boundary conditio n and finite element mesh; b) density distribution at final stage of

Ternary analytic porosity-reduction model of sandstone compaction trend and its significance in petroleum geology: A case study of tight sandstones in Permian Lower Shihezi Formation of Shilijiahan area, Ordos Basin, China

The tight sandstones in the Permian Lower Shihezi Formation of Shilijiahan area in the Ordos Basin was taken as study object in this research to quantitatively determine the effects of burial depth, burial time and compaction strength on porosity during densification of reservoir. Firstly, sandstone compaction profiles were analyzed in detail. Secondly, the theoretical study was performed based on visco-elasto-plastic stress–strain model. Thirdly, multiple regression and iterative algorithm were used respectively to ascertain the variation trends of Young's modulus and equivalent viscosity coefficient with burial depth and burial time. Accordingly, the ternary analytic porosity-reduction model of sandstone compaction trend was established. Eventually, the reasonability of improved model was tested by comparing with thin-section statistics under microscope and the models in common use. The study shows that the new model can divide the porosity reduction into three parts, namely, elastic porosity loss, visco-plastic porosity loss and porosity loss from cementation. And the results calculated by the new model of litharenite in He 2 Member are close to the average value from the thin-section statistics on Houseknecht chart, which approximately reveals the relative magnitudes of compaction and cementation in the normal evolution trend of sandstone porosity. Furthermore, the model can more exactly depict the compaction trend of sandstone affected little by dissolution than previous compaction models, and evaluate sandstone compaction degree and its contribution to reservoir densification during different burial and uplift processes.

振动压路机的能量传递模型与作业参数优化研究

为提高振动压路机作业过程的压实质量,研究了振动压路机的能量传递模型与作业参数优化。首先基于U-K方程建立“碾轮-被压实材料”的系统振动动力学模型,结合能量守恒提出振动压路机能量传递模型;然后以振动频率和压实速度作为寻优工作参数,构建路面压实质量的优化模型;最后通过案例验证证明了所提方法的可行性与有效性。结果表明:工作频率与被压实材料的固有频率比值保持在√2~2范围内,可避免共振带来的影响;初始阶段低速碾压,材料性能稳定后提高碾压速度可保证高效压实,得出振动频率在21.8~27 Hz、压实速度在2.36~2.91 km/s范围内,可达到最优的压实效果。所提的能量传递模型、作业参数优化模型为保障振动压路机压实质量奠定了基础,为提高振动压路机压实质量和效率提供了参考。

强夯作用下回填砂土挡墙墙后土压力分布研究

挡土墙墙后土压力分布是墙体形状及配筋设计的重要依据,为研究强夯作用下挡墙墙后土压力分布规律,开展了自重、堆载及强夯荷载下的挡土墙物理模型试验,通过不同深度的土压力监测,分析了夯击落距和夯击次数对墙后土压力分布的影响,重点分析了强夯冲击松动区的影响,并基于等效静力法修正了强夯作用下墙后土压力理论计算公式。结果表明:单次夯击作用下墙后土压力瞬间增大至极值后逐渐衰减至稳定,随着夯击次数的增多,土体逐渐密实,相应的墙后土压力会逐次增加;浅部土体在强夯作用下会形成冲击松动区,松动区内土体变得松散从而土压力值较小,而松动区下部土压力随深度迅速增大后再减小,呈“鼓肚”状非线性分布;松动区土体重度、松动区厚度尤其是后者对于墙后土压力理论分布曲线影响较大,考虑松动区影响的墙后土压力等效静力法修正理论公式更符合实际情况。

考虑参数随机性的压实黄土蠕变变形不确定性分析

现有蠕变模型的计算值为确定值,未能考虑岩土材料和参数评估过程中的随机性。为反映岩土材料的变形随机特性,基于多次重复的一维固结蠕变试验,本文研究了分级和分别加载条件下压实黄土的蠕变特性,建立了考虑参数随机性的改进Merchant模型,提出了一种蠕变变形的不确定性预测方法,并通过延安高填方工程进行了验证。结果表明,压实黄土具有明显的衰减蠕变特性,引入非线性元件的Merchant模型能更好描述土体的应变时间关系,考虑参数随机性的模型计算值近似服从正态分布;通过不确定性预测方法可以获得蠕变变形值的概率云图,且工程实测蠕变变形值落在预测范围的95%的置信区间内,说明了考虑参数随机性的蠕变变形不确定性预测方法的有效性。

强夯起重机臂架结构有限元分析及优化

针对强夯起重机臂架实际工况下的应力集中、结构冗余等问题,以某新型强夯起重机为分析对象,采用UG NX及其Nastran模块建立三维模型,有限元分析计算确定多种工况载荷,得到强夯起重机在静载和动载荷作用下的位移和应力分布情况,确定应力集中和结构冗余部位,通过优化设计改善结构应力分布,减轻臂架质量并提高其力学性能。对起重和脱钩工况的优化结果表明,臂架最大应力和最大位移分别减少12.5%和6.99%,臂架质量减轻2.36%。

混凝土振捣密实性研究进展

混凝土振捣工艺效果是影响成型质量的主要因素,但实践中仍以经验判断为主,缺乏可行的理论指导和科学量化的评价判据.针对拌和物振捣施工,从振捣密实理论、密实性影响因素、拌和物成型质量评价以及信息化工艺等方面,阐述了混凝土振捣施工的现状与技术进展,分析了振捣理论与应用存在的问题,展望了数字振捣技术的发展方向.