Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy

As an important wide-bandgap semiconductor,gallium nitride(GaN)has attracted considerable attention.This paper describes the use of confocal Raman spectroscopy to characterize undoped GaN,n-type GaN,and p-type GaN through depth profiling using 405-,532-,and 638-nm wavelength lasers.The Raman signal intensity of the sapphire substrate at different focal depths is studied to analyze the depth resolution.Based on the shift of the E2 H mode of the GaN epitaxial layer,the interfacial stress for different types of GaN is characterized and calculated.The results show that the maximum interfacial stress appears approximately at the junction of the GaN and the sapphire substrate.Local interfacial stress analysis between the GaN epitaxial layer and the substrate will be very helpful in furthering the applications of GaN devices.

Combination of multi-focus Raman spectroscopy and compressive sensing for parallel monitoring of single-cell dynamics

To overcome the low efficiency of conventional confocal Raman spectroscopy,many efforts have been devoted to parallelizing the Raman excitation and acquisition,in which the scattering from multiple foci is projected onto different locations on a spectrometer's CCD,along either its vertical,horizontal dimension,or even both.While the latter projection scheme relieves the limitation on the row numbers of the CCD,the spectra of multiple foci are recorded in one spectral channel,resulting in spectral overlapping.Here,we developed a method under a com-pressive sensing framework to demultiplex the superimposed spectra of multiple cells during their dynamic processes.Unlike the previous methods which ignore the information connection be-tween the spectra of the cells recorded at different time,the proposed method utilizes a prior that a cell's spectra acquired at different time have the same sparsity structure in their principal components.Rather than independently demultiplexing the mixed spectra at the individual time intervals,the method demultiplexes the whole spectral sequence acquired continuously during the dynamic process.By penalizing the sparsity combined from all time intervals,the collaborative optimization of the inversion problem gave more accurate recovery results.The performances of the method were substantiated by a 1D Raman tweezers array,which monitored the germination of multiple bacterial spores.The method can be extended to the monitoring of many living cells randomly scattering on a coverslip,and has a potential to improve the throughput by a few orders.

Silicon Vacancy Color Centers in 6H-SiC Fabricated by Femtosecond Laser Direct Writing

As a single photon source,silicon vacancy(V_(Si))centers in wide bandgap semiconductor silicon carbide(SiC)are expected to be used in quantum technology as spin qubits to participate in quantum sensing and quantum computing.Simultaneously,the new direct femtosecond(fs)laser writing technology has been successfully applied to preparing V_(Si)s in SiC.In this study,6H-SiC,which has been less studied,was used as the processed material.V_(Si) center arrays were formed on the 6H-SiC surface using a 1030-nm-wavelength fs pulsed laser.The surface was characterized by white light microscopy,atomic force microscopy,and confocal photoluminescence(PL)/Raman spectrometry.The effect of fs laser energy,vector polarization,pulse number,and repetition rate on 6H-SiC V_(Si) defect preparation was analyzed by measuring the V_(Si) PL signal at 785-nm laser excitation.The results show that fs laser energy and pulse number greatly influence the preparation of the color center,which plays a key role in optimizing the yield of V_(Si)s prepared by fs laser nanomachining.