Recently,a contact-resistance-measurement method was developed to detect the minigap,hence the Andreev bound states(ABSs),in Josephson junctions constructed on the surface of three-dimensional topological insulators(3...Recently,a contact-resistance-measurement method was developed to detect the minigap,hence the Andreev bound states(ABSs),in Josephson junctions constructed on the surface of three-dimensional topological insulators(3D TIs).In this work,we further generalize that method to the circumstance with radio frequency(rf)irradiation.We find that with the increase of the rf power,the measured minigap becomes broadened and extends to higher energies in a way similar to the rf power dependence of the outer border of the Shapiro step region.We show that the corresponding data of contact resistance under rf irradiation can be well interpreted by using the resistively shunted Josephson junction(RSJ)model and the Blonder–Tinkham–Klapwijk(BTK)theory.Our findings could be useful when using the contact-resistancemeasurement method to study the Majorana-related physics in topological insulator-based Josephson junctions under rf irradiation.展开更多
The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) de...The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency( fT), maximum frequency of oscillation( fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance(gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance(gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ～ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance.展开更多
基金Project supported by the National Basic Research Program of China(Grant Nos.2016YFA0300601,2017YFA0304700,and 2015CB921402)the National Natural Science Foundation China(Grant Nos.11527806,91221203,11174357,91421303,and 11774405)+1 种基金the Strategic Priority Research Program B of the Chinese Academy of Sciences(Grant Nos.XDB07010100 and XDB28000000)the Beijing Municipal Science&Technology Commission,China(Grant No.Z191100007219008)
文摘Recently,a contact-resistance-measurement method was developed to detect the minigap,hence the Andreev bound states(ABSs),in Josephson junctions constructed on the surface of three-dimensional topological insulators(3D TIs).In this work,we further generalize that method to the circumstance with radio frequency(rf)irradiation.We find that with the increase of the rf power,the measured minigap becomes broadened and extends to higher energies in a way similar to the rf power dependence of the outer border of the Shapiro step region.We show that the corresponding data of contact resistance under rf irradiation can be well interpreted by using the resistively shunted Josephson junction(RSJ)model and the Blonder–Tinkham–Klapwijk(BTK)theory.Our findings could be useful when using the contact-resistancemeasurement method to study the Majorana-related physics in topological insulator-based Josephson junctions under rf irradiation.
文摘The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency( fT), maximum frequency of oscillation( fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance(gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance(gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ～ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance.
