Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-dra...Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-drain contact CNTFETs outperform the Schottky contact devices with and without strain applied. The off-state current in both types of contact is similar with and without strain applied. This is because both types of contact offer very similar potential barrier in off-state. However, the on-state current in doped contact devices is much higher due to better modulation of on-state potential profile, and its variation with strain is sensitive to the device contact type. The on/off current ratio and the inverse subthreshold slope are better with doped source-drain contact, and their variations with strain are relatively less sensitive to the device contact type. The channel transconductance and device switching performance are much better with doped source-drain contact, and their variations with strain are sensitive to device contact type.展开更多
Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was...Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was found there is a significant difference between Schottky drain AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in two-dimensional electron gas （2DEG） electron mobility in the gate–drain channel. We attribute this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly.展开更多
A comparison of direct integration methods is madeand their efficiency is investigated for impact problems.New-mark,Wilson-θ,Central Difference and Houbolt Methodsare used as direct integration methods.Impact analysi...A comparison of direct integration methods is madeand their efficiency is investigated for impact problems.New-mark,Wilson-θ,Central Difference and Houbolt Methodsare used as direct integration methods.Impact analysisincludes that of elastic and large deformation based uponupdated Lagrangian including buckling check.The resultsshow that the direct integration methods give differentresults in different contact-impact cases.展开更多
Flexible and wearable sensing devices have broad application prospects in bio-monitoring such as pulse measurement,motion detection and voice recognition.In recent years,many significant improvements had been made to ...Flexible and wearable sensing devices have broad application prospects in bio-monitoring such as pulse measurement,motion detection and voice recognition.In recent years,many significant improvements had been made to enhance the sensor’s performance including sensitivity,flexibility and repeatability.However,it is still extremely complicated and difficult to prepare a patterned sensor directly on a flexible substrate.Herein,inspired by typography,a lowcost,environmentally friendly stamping method for the mass production of transparent conductive carbon nanotube(CNT)film is proposed.In this dry transfer strategy,a porous CNT block was used as both the seal and the ink;and Ecoflex film was served as an object substrate.Welldesigned CNT patterns can be easily fabricated on the polymer substrate by engraving the target pattern on the CNT seal before the stamping process.Moreover,the CNT film can be directly used to fabricate ultrathin(300μm)strain sensor.This strain sensor possesses high sensitivity with a gauge factor(GF)up to 9960 at 85%strain,high stretchability(>200%)and repeatability(>5000 cycles).It has been used to measure pulse signals and detect joint motion,suggesting promising application prospects in flexible and wearable electronic devices.展开更多
Thermal damage caused by frictional heat of rolling-sliding contact is one of the most important failure forms of wheel and rail. Many studies of wheel-rail frictional heating have been devoted to the temperature fiel...Thermal damage caused by frictional heat of rolling-sliding contact is one of the most important failure forms of wheel and rail. Many studies of wheel-rail frictional heating have been devoted to the temperature field, but few literatures focus on wheel-rail thermal stress caused by frictional heating. However, the wheel-rail creepage is one of important influencing factors of the thermal stress In this paper, a thermo-mechanical coupling model of wheel-rail rolling-sliding contact is developed using thermo-elasto-plastic finite element method. The effect of the wheel-rail elastic creepage on the distribution of heat flux is investigated using the numerical model in which the temperature-dependent material properties are taken into consideration. The moving wheel-rail contact force and the frictional heating are used to simulate the wheel rolling on the rail. The effect of the creepage on the temperature rise, thermal strain, residual stress and residual strain under wheel-rail sliding-rolling contact are investigated. The investigation results show that the thermally affected zone exists mainly in a very thin layer of material near the rail contact surface during the rolling-sliding contact. Both the temperature and thermal strain of rail increase with increasing creepage. The residual stresses induced by the frictional heat in the surface layer of rail appear to be tensile. When the creepage is large, the frictional heat has a significant influence on the residual stresses and residual strains of rail. This paper develops a thermo-meehanical coupling model of wheel-rail rolling-sliding contact, and the obtained results can help to understand the mechanism of wheel/rail frictional thermal fatigue.展开更多
In automobile wheel application, a test rig is vital and used to simulate conditions of the wheel in service in order to affirm the safety and reliability of the wheel. The present work designed a test rig for measuri...In automobile wheel application, a test rig is vital and used to simulate conditions of the wheel in service in order to affirm the safety and reliability of the wheel. The present work designed a test rig for measuring axial strains in automobile wheel. The wheel used was a five-arm wheel (6JX14H2;ET 42) and Tyre (175 × 65 R 14). Experimental (EXP) test was carried out, with a radial load of 4750 N and inflation pressure of 0.3 MPa, to measure the axil strains which were converted to maximum principal strain values and, compared with data from Finite Element Analysis (FEA) using Creo-Element/Pro 5.0 at wheel’s contact angles of 90 degree (FEA 90 deg), 40 degree (FEA 40 deg) and 30.25 degree (FEA 30.25 deg), respectively. Results show that at the wheel’s point of contact with the ground, maximum principal strain values were highest at the inboard bead seat with a value of about 5.69 × 10<sup>-4</sup> mm/mm, followed by the values at the well of about 5.66 × 10<sup>-4</sup> mm/mm. The value at the outboard bead seat was least at about 2.22 × 10<sup>-4</sup> mm/mm, which was due to the presence of spikes at this location that tends to resist imposed radial loads. However, the highest mean maximum principal strain values at the locations of inboard, well and outboard, were about 2.11 × 10<sup>-4</sup> mm/mm, 3.78 × 10<sup>-4</sup> mm/mm and .99 × 10<sup>-4</sup> mm/mm, respectively. With the highest single value of about 5.69 × 10<sup>-4</sup> mm/mm, the inboard bead seat was the most strained location of the wheel. Overall results showed that all values of maximum principal strains were below the threshold value of about 1 × 10<sup>-2</sup> mm/mm. The values obtained for EXP and FEA could be said to be in close agreement when compared with the threshold value. With this in mind, the rig is recommended for use in related experimental procedures.展开更多
文摘Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-drain contact CNTFETs outperform the Schottky contact devices with and without strain applied. The off-state current in both types of contact is similar with and without strain applied. This is because both types of contact offer very similar potential barrier in off-state. However, the on-state current in doped contact devices is much higher due to better modulation of on-state potential profile, and its variation with strain is sensitive to the device contact type. The on/off current ratio and the inverse subthreshold slope are better with doped source-drain contact, and their variations with strain are relatively less sensitive to the device contact type. The channel transconductance and device switching performance are much better with doped source-drain contact, and their variations with strain are sensitive to device contact type.
基金Project supported by the National Natural Science Foundation of China (Grant No. 11174182)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110131110005)
文摘Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was found there is a significant difference between Schottky drain AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in two-dimensional electron gas （2DEG） electron mobility in the gate–drain channel. We attribute this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly.
文摘A comparison of direct integration methods is madeand their efficiency is investigated for impact problems.New-mark,Wilson-θ,Central Difference and Houbolt Methodsare used as direct integration methods.Impact analysisincludes that of elastic and large deformation based uponupdated Lagrangian including buckling check.The resultsshow that the direct integration methods give differentresults in different contact-impact cases.
基金financially supported by National Natural Science Foundation of China(Grant No.51772335)Guangdong Youth Top-notch Talent Support Program(No.2015TQ01C201)the Fundamental Research Funds for the Central Universities.
文摘Flexible and wearable sensing devices have broad application prospects in bio-monitoring such as pulse measurement,motion detection and voice recognition.In recent years,many significant improvements had been made to enhance the sensor’s performance including sensitivity,flexibility and repeatability.However,it is still extremely complicated and difficult to prepare a patterned sensor directly on a flexible substrate.Herein,inspired by typography,a lowcost,environmentally friendly stamping method for the mass production of transparent conductive carbon nanotube(CNT)film is proposed.In this dry transfer strategy,a porous CNT block was used as both the seal and the ink;and Ecoflex film was served as an object substrate.Welldesigned CNT patterns can be easily fabricated on the polymer substrate by engraving the target pattern on the CNT seal before the stamping process.Moreover,the CNT film can be directly used to fabricate ultrathin(300μm)strain sensor.This strain sensor possesses high sensitivity with a gauge factor(GF)up to 9960 at 85%strain,high stretchability(>200%)and repeatability(>5000 cycles).It has been used to measure pulse signals and detect joint motion,suggesting promising application prospects in flexible and wearable electronic devices.
基金supported by National Natural Science Foundation of China(Grant Nos.51175438,U1134202)National Science and Technology Support Program of China(Grant No.2009BAG12A01)Program for New Century Excellent Talents in University of China(Grant No.NCET-08-0824)
文摘Thermal damage caused by frictional heat of rolling-sliding contact is one of the most important failure forms of wheel and rail. Many studies of wheel-rail frictional heating have been devoted to the temperature field, but few literatures focus on wheel-rail thermal stress caused by frictional heating. However, the wheel-rail creepage is one of important influencing factors of the thermal stress In this paper, a thermo-mechanical coupling model of wheel-rail rolling-sliding contact is developed using thermo-elasto-plastic finite element method. The effect of the wheel-rail elastic creepage on the distribution of heat flux is investigated using the numerical model in which the temperature-dependent material properties are taken into consideration. The moving wheel-rail contact force and the frictional heating are used to simulate the wheel rolling on the rail. The effect of the creepage on the temperature rise, thermal strain, residual stress and residual strain under wheel-rail sliding-rolling contact are investigated. The investigation results show that the thermally affected zone exists mainly in a very thin layer of material near the rail contact surface during the rolling-sliding contact. Both the temperature and thermal strain of rail increase with increasing creepage. The residual stresses induced by the frictional heat in the surface layer of rail appear to be tensile. When the creepage is large, the frictional heat has a significant influence on the residual stresses and residual strains of rail. This paper develops a thermo-meehanical coupling model of wheel-rail rolling-sliding contact, and the obtained results can help to understand the mechanism of wheel/rail frictional thermal fatigue.
文摘In automobile wheel application, a test rig is vital and used to simulate conditions of the wheel in service in order to affirm the safety and reliability of the wheel. The present work designed a test rig for measuring axial strains in automobile wheel. The wheel used was a five-arm wheel (6JX14H2;ET 42) and Tyre (175 × 65 R 14). Experimental (EXP) test was carried out, with a radial load of 4750 N and inflation pressure of 0.3 MPa, to measure the axil strains which were converted to maximum principal strain values and, compared with data from Finite Element Analysis (FEA) using Creo-Element/Pro 5.0 at wheel’s contact angles of 90 degree (FEA 90 deg), 40 degree (FEA 40 deg) and 30.25 degree (FEA 30.25 deg), respectively. Results show that at the wheel’s point of contact with the ground, maximum principal strain values were highest at the inboard bead seat with a value of about 5.69 × 10<sup>-4</sup> mm/mm, followed by the values at the well of about 5.66 × 10<sup>-4</sup> mm/mm. The value at the outboard bead seat was least at about 2.22 × 10<sup>-4</sup> mm/mm, which was due to the presence of spikes at this location that tends to resist imposed radial loads. However, the highest mean maximum principal strain values at the locations of inboard, well and outboard, were about 2.11 × 10<sup>-4</sup> mm/mm, 3.78 × 10<sup>-4</sup> mm/mm and .99 × 10<sup>-4</sup> mm/mm, respectively. With the highest single value of about 5.69 × 10<sup>-4</sup> mm/mm, the inboard bead seat was the most strained location of the wheel. Overall results showed that all values of maximum principal strains were below the threshold value of about 1 × 10<sup>-2</sup> mm/mm. The values obtained for EXP and FEA could be said to be in close agreement when compared with the threshold value. With this in mind, the rig is recommended for use in related experimental procedures.
