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Quantum phase transition and Coulomb blockade effect in triangular quantum dots with interdot capacitive and tunnel couplings
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作者 熊永臣 王为忠 +1 位作者 杨俊涛 黄海铭 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第2期403-408,共6页
The quantum phase transition and the electronic transport in a triangular quantum dot system are investigated using the numerical renormalization group method.We concentrate on the interplay between the interdot capac... The quantum phase transition and the electronic transport in a triangular quantum dot system are investigated using the numerical renormalization group method.We concentrate on the interplay between the interdot capacitive coupling V and the interdot tunnel coupling t.For small t,three dots form a local spin doublet.As t increases,due to the competition between V and t,there exist two first-order transitions with phase sequence spin-doublet-magnetic frustration phase-orbital spin singlet.When t is absent,the evolutions of the total charge on the dots and the linear conductance are of the typical Coulomb-blockade features with increasing gate voltage.While for sufficient t,the antiferromagnetic spin correlation between dots is enhanced,and the conductance is strongly suppressed for the bonding state is almost doubly occupied. 展开更多
关键词 quantum phase transition coulomb blockade effect triangular quantum dots strongly correlated system
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COULOMB BLOCKADE EFFECT IN SELF-ASSEMBLED GOLD QUANTUM DOTS
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作者 Shu-FenHu Ru-LingYeh Ru-ShiLiu 《China Particuology》 SCIE EI CAS CSCD 2004年第4期174-176,共3页
Nanometer-scale Au quantum dots have been assembled on SiO2 by controlling the reaction of raw materials to form a citrate Au sol and an aminosilane/dithiol-treated patterned Si wafer. The detailed formation mechanism... Nanometer-scale Au quantum dots have been assembled on SiO2 by controlling the reaction of raw materials to form a citrate Au sol and an aminosilane/dithiol-treated patterned Si wafer. The detailed formation mechanism has been studied. Three gold colloidal particles (15 nm), aligned in a chain to form a one-dimensional current path, was bridged across an 80-nm gap between source and drain metal electrodes. The device exhibited a Coulomb blockade effect at 33 K. 展开更多
关键词 quantum dots coulomb blockade effect GOLD
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Effect of Nano Silver Modification on the Dielectric Properties of Ag@TiO_(2)/PVDF Composites
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作者 戴金航 MENG Shunliang +4 位作者 YANG Chuntian Lv Wenzhong CHEN Xizi YIN Yuhao 梁飞 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2021年第3期303-310,共8页
To get a dielectric material with a high dielectric permittivity and suppressed dielectric loss,nano-Ag with a particle size of 20 nm and Ag@TiO_(2)core-shell particles with diameters of approximately 70-120 nm were e... To get a dielectric material with a high dielectric permittivity and suppressed dielectric loss,nano-Ag with a particle size of 20 nm and Ag@TiO_(2)core-shell particles with diameters of approximately 70-120 nm were embedded in polyvinylidene fluoride(PVDF)to fabricate nano-Ag/Ag@TiO_(2)/PVDF composites.After being modified by nano-Ag with 3 vol%optimal amount,the relative permittivity(ε_r)at 100 Hz of 50 vol%Ag@TiO_(2)/PVDF composites was 61,and the dielectric loss can be suppressed to 0.04,almost 96.4%lower than that of unmodified composites,and a higher frequency stability of bothε_r and loss has also been found.The underlying mechanism of the reduced loss was attributed to Maxwell-Wagner polarization and the Coulomb blockade effect caused by the introduction of a small amount of nano-Ag,which will block the movement of electrons between metal nanoparticles and composites.The space charge polarization and conductance loss are weakened at lower and higher Ag@TiO_(2)filling ratios,respectively,thus leading to a very low loss of the composites. 展开更多
关键词 polymer composites dielectric properties AC impedance spectrum Ag@TiO_(2)/PVDF coulomb blockade effect
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Preparation of size controllable copper nanocrystals for nonvolatile memory applications
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作者 王利 孙红芳 +1 位作者 周惠华 朱静 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第10期593-596,共4页
A method of fabricating Cu nanocrystals embedded in SiO2 dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocry... A method of fabricating Cu nanocrystals embedded in SiO2 dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocrystal grains are controlled by adjusting experimental parameters. The relationship between nanocrystal floating gate micro-structure and its charge storage capability is also discussed theoretically. 展开更多
关键词 nanocrystal grain nonvolatile memory coulomb blockade effect magnetron sputtering
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