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Effect of annealing on composition,structure and electrical properties of Au layers grown on different thickness Cr layers
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作者 Yan Huang Hong Qiu +3 位作者 Liqing Pan Yue Tian Fengping Wang Ping Wu Department of Physics, Applied Science School, University of Science and Technology Beijing, Beijing 100083, China 《Journal of University of Science and Technology Beijing》 CSCD 2004年第3期235-239,共5页
110 nm-thick Au layers were sputter-deposited on unheated glasses coatedabout a 10 nm-thick and a 50 nm-thick Cr layer respectively. The Au/Cr bilayer films were annealedin a vacuum of 1 mPa at 300℃ for 2, 5 and 30 m... 110 nm-thick Au layers were sputter-deposited on unheated glasses coatedabout a 10 nm-thick and a 50 nm-thick Cr layer respectively. The Au/Cr bilayer films were annealedin a vacuum of 1 mPa at 300℃ for 2, 5 and 30 min, respectively. Auger electron spectroscopy, X-raydiffraction and Field emission scanning electron microscopy were used to analyze the composition andstructure of the Au layers. The resistivity of the bilayer films was measured by using four-pointprobe technique. The adhesion of the bilayer films to the substrate was tested using tape tests. Theamount of Cr atoms diffusing into the Au layer increases with increasing the annealing time,resulting in a decrease in lattice constant and an increase in resistivity of the Au layer. Thecontent of Cr inside the Au layer grown on the thinner Cr layer is less than that grown on thethicker Cr layer. For the Au/Cr bilayer films, the lower resistivity and the good adhesion to theglass substrate can be obtained at a shorter annealing time for a thinner Cr layer. 展开更多
关键词 Au/cr bilayer film cr layer thickness ANNEALING CHARACTERISTIC
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