Enhanced Photovoltaic Properties for Rear Passivated Crystalline Silicon Solar Cells by Fabricating Boron Doped Local Back Surface Field

In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field（B-LBSF） was successfully fabricated in this work. Through boron doping in the LBSF, much higher doping concentration was observed for the B-LBSF over the Al-LBSF. Higher doping concentration in the LBSF is expected to lead to better rear passivation and lower rear contact resistance. Based on one thousand pieces of solar cells for each type, it was found that the rear passivated crystalline silicon solar cells with B-LBSF showed statistical improvement in their photovoltaic properties over those with Al-LBSF.

Photovoltaic Cells and Modules towards Terawatt Era

Progresses in photovoltaic technologies over the past years are evident from the lower costs, the rising efficiency, to the great improvements in system reliability and yield. Cumulative installed power yearly growths were on an average more than 40% in the period from 2007 to 2016 and in 2016, the global cumulative photovoltaic power installed has reached 320 GWp. The level 0.5 TWp could be reached before 2020. The production processes in the solar industry still have great potential for optimization both wafer based and thin film technologies. Trends following from the present technology levels are discussed, also taking into account other parts of photovoltaic systems that influence the cost of electrical energy produced. Present developments in the three generations of photovoltaic modules are discussed along with the criteria for the selection of appropriate photovoltaic module manufacturing technologies. The wafer based crystalline silicon(csilicon) technologies have the role of workhorse of present photovoltaic power generation, representing more than 90% of total module production. Further technology improvements have to be implemented without significantly increasing costs per unit, despite the necessarily more complex manufacturing processes involved. The tandem of c-silicon and thin film cells is very promising. Durability may be a limiting factor of this technology due to the dependence of the produced electricity cost on the module service time.

Polarization effects and tests for crystalline silicon solar cells

We try to find a fast and simple potential induced degradation effect （PID） test procedure for crystalline silicon solar cells. With sodium chloride （NaC1） solution as Na＋ source, PVB as lamination material, we can carry out the test in 1 h. Solar cells with newly developed PID resistance process were also tested. The increase of reverse current of solar cell can be considered a key standard to determine if the solar cell was prone to PID. Moreover, it showed that the increase of reverse current for the PID resistance solar cell was less than 2. In addition, the test results of the solar cells fitted very well with that of the modules by standard procedure.