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Epitaxial growth of MOCVD-derived YBCO films by modulation of Cu(tmhd)_2 concentration 被引量:3
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作者 Jie Xiong Fei Zhang +3 位作者 Xin Liu Rui-Peng Zhao Xiao-Hui Zhao Bo-Wan Tao 《Rare Metals》 SCIE EI CAS CSCD 2014年第1期70-74,共5页
Metal-organic chemical vapor deposition was applied to fabricate YBa2Cu3OT-a (YBCO) films on singlecrystal LaA103 (001) substrates for its high deposition rate, easy adjustment on film composition, and low require... Metal-organic chemical vapor deposition was applied to fabricate YBa2Cu3OT-a (YBCO) films on singlecrystal LaA103 (001) substrates for its high deposition rate, easy adjustment on film composition, and low requirement on vacuum apparatus. The effects of Cu(tmhd)2 concentra- tion in the precursor on the properties of YBCO films were systematically investigated. X-ray diffraction (XRD) reveals that the mole ratio of Cu/Ba in the precursor from 0.77 to 0.97 is helpful to improve the crystallization and out-of-plane orientation of YBCO films; however, it hardly affects the inplane texture. Scanning electron microscope (SEM) shows the dense, crack-free but rough surface, on which there are Cu-O and Ba-Cu-O outgrowths identified by energy-dispersive spectrometer (EDS). As the mole ratio of Cu/Ba increasing, the average size of Ba-Cu-O precipitates keeps increasing and the film composition becomes inhomoge- neous at the mole ratio of Cu/Ba of 0.97. The 250 nm thick YBCO film prepared at the mole ratio of Cu/Ba of 0.91 shows the critical current density (Jc) of 4.0 MA.cm-2 (77 K, 0 T). 展开更多
关键词 MOCVD YBCO cu(tmhd)2 concentration cu/Ba ratio
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