Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at l...Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.展开更多
Cu/W multilayer nanofilms are prepared in pure Ar and He/At mixing atmosphere by the rf magnetron sputtering method. The cross-sectional morphology and the defect distribution of the Cu/W multilayer nanofilms are char...Cu/W multilayer nanofilms are prepared in pure Ar and He/At mixing atmosphere by the rf magnetron sputtering method. The cross-sectional morphology and the defect distribution of the Cu/W multilayer nanofilms are characterized by scanning electron microscopy and Doppler broadening positron annihilation spectroscopy. The results show that plenty of point defects can be produced by introducing He during the growth of the multilayer nanofilms. With the increasing natural storage time, He located in the near surface of the Cu//W multilayer nanofilm at room temperature could be released gradually and induce the segregation of He-related defects due to the diffusion of He and defects. However, more He in the deep region spread along the interface of the Cu/W multilayer nanofilm. Meanwhile, the layer interfaces can still maintain their stability.展开更多
文摘Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11275132,51171124 and 11505121the International Science and Technology Cooperation Program of China under Grant No 2014DFR50710the Scientific and Technical Supporting Programs Funded by the Science and Technology Department of Sichuan Province under Grant No 2014GZ0004
文摘Cu/W multilayer nanofilms are prepared in pure Ar and He/At mixing atmosphere by the rf magnetron sputtering method. The cross-sectional morphology and the defect distribution of the Cu/W multilayer nanofilms are characterized by scanning electron microscopy and Doppler broadening positron annihilation spectroscopy. The results show that plenty of point defects can be produced by introducing He during the growth of the multilayer nanofilms. With the increasing natural storage time, He located in the near surface of the Cu//W multilayer nanofilm at room temperature could be released gradually and induce the segregation of He-related defects due to the diffusion of He and defects. However, more He in the deep region spread along the interface of the Cu/W multilayer nanofilm. Meanwhile, the layer interfaces can still maintain their stability.
