采用溶胶-凝胶法和化学沉积法制备了Li4Ti4.75Cu0.25O12/SnO2复合活性材料。通过X射线衍射（XRD）、扫描电镜（SEM）、恒流充放电测试对材料进行结构、形貌表征及电化学性能测试。结果表明：Li4Ti4.75Cu0.25O12/SnO2复合活性物质能够进...采用溶胶-凝胶法和化学沉积法制备了Li4Ti4.75Cu0.25O12/SnO2复合活性材料。通过X射线衍射（XRD）、扫描电镜（SEM）、恒流充放电测试对材料进行结构、形貌表征及电化学性能测试。结果表明：Li4Ti4.75Cu0.25O12/SnO2复合活性物质能够进一步改善倍率性能的同时,循环性能也得到了很好的保证。当电压在1~3 V时,电流密度为1C倍率条件下,Li4Ti4.75Cu0.25O12/SnO2复合材料首次放电比容量高达202.55 m A·h/g。经过50次循环后,容量仍保持在202.51 m A·h/g,容量保持率高达99.98%。展开更多
To fabricate a heterostructure solar cell using environmentally friendly materials and low cost techniques, tin oxide (SnO2) and cuprous oxide (Cu2O) were deposited by the sol-gel method and the electrochemical deposi...To fabricate a heterostructure solar cell using environmentally friendly materials and low cost techniques, tin oxide (SnO2) and cuprous oxide (Cu2O) were deposited by the sol-gel method and the electrochemical deposition, respectively. The SnO2 films were deposited from a SnCl2 solution containing ethanol and acetic acid. The Cu2O films were deposited using a galvanostatic method from an aqueous bath containing CuSO4 and lactic acid at a temperature of 40°C. The Cu2O/SnO2 heterostructure solar cells showed rectification and photovoltaic properties, and the best cell showed a conversion efficiency of 6.6 × 10-2 % with an open-circuit voltage of 0.29 V, a short-circuit current of 0.58 mA/cm2, and a fill factor of 0.39.展开更多
According to the principle that fiber-like arrangement of reinforcing particles SnO2 paralleling to the direction of current is propitious to the electrical and mechanical performance of the electrical contact materia...According to the principle that fiber-like arrangement of reinforcing particles SnO2 paralleling to the direction of current is propitious to the electrical and mechanical performance of the electrical contact materials, we proposed and reported a novel precursor route used to prepare Ag/SnO,. electrical contact material with fiber- like arrangement of reinforcing nanoparticles. The mechanism for the formation of fiber-like arrangement of rein- forcing nanoparticles in Ag/SnO2 electrical contact material was also discussed. The as-prepared samples were char- acterized by means of scanning electron microscope （SEM）, optical microscope （OM）, energy-dispersive X-ray spectroscopy （EDX）, MHV2000 microhardness test, and double bridge tester. The analysis showed that the as-prepared Ag/SnO,, electrical contact material with fiber-like arrangement of reinforcing nanoparticles exhibits a high elongation of 24 %, a particularly low electrical resistivity of 2.08 μΩ. cm, and low arcing energy, and thus has considerable technical, economical and environmental benefits.展开更多
Porous Cu-doped SnO<sub>2</sub> thin films were synthesized by the sol-gel dip-coating method for enhancing methanol sensing performance. The effect of Cu doping concentration on the SnO<sub>2</su...Porous Cu-doped SnO<sub>2</sub> thin films were synthesized by the sol-gel dip-coating method for enhancing methanol sensing performance. The effect of Cu doping concentration on the SnO<sub>2</sub> sensibility was investigated. XRD data confirm that the fabricated SnO<sub>2</sub> films are polycrystalline with tetragonal rutile crystal structure. AFM and SEM micrographs confirmed the roughness and the porosity of SnO<sub>2</sub> surface, respectively. UV-Vis spectrum shows that SnO<sub>2</sub> thin films exhibit high transmittance in the visible region ~95%. The band gap (3.80 - 3.92 eV) and the optical thickness (893 - 131 nm) of prepared films were calculated from transmittance data. The sensing results demonstrate that SnO<sub>2</sub> films have a high sensitivity and a fast response to methanol. In particular, 3% Cu-SnO<sub>2</sub> films have a higher sensitivity (98%), faster response (10-<sup>2</sup> s) and shorter recovery time (18 s) than other films.展开更多
In this paper, high-quality nanocrystalline SnO_2 thin film was grown on bare Si(100) substrates by a sol–gel method. A metal–semiconductor–metal gas sensor was fabricated using nanocrystalline SnO_2 thin film and ...In this paper, high-quality nanocrystalline SnO_2 thin film was grown on bare Si(100) substrates by a sol–gel method. A metal–semiconductor–metal gas sensor was fabricated using nanocrystalline SnO_2 thin film and palladium(Pd)metal. The contact between Pd and nanocrystalline SnO_2 film is tunable. Ohmic barrier contact was formed without addition of glycerin, while Schottky contact formed by adding glycerin. Two kinds of sensor devices with Schottky contact were fabricated(Device 1: 8 h, 500 °C; Device 2: 10 h, 400 °C). The room temperature sensitivity for hydrogen(H_2) was120 and 95 % in 1000 ppm H_2, and the low power consumption was 65 and 86 l W for two devices, respectively. At higher temperature of 125 °C, the sensitivity was increased to 195 and 160 %, respectively. The sensing measurements were repeatable at various temperatures(room temperature, 75, 125 °C) for over 50 min. It was found that Device 1 has better sensitivity than Device 2 due to its better crystallinity. These findings indicate that the sensors fabricated on bare Si by adding glycerin to the sol solution have strong ability to detect H_2 gas under different concentrations and temperatures.展开更多
Ag/SnO2,as a promising and environment-friendly electrical contact material,is widely applied in low-voltage apparatus.But the properties of Ag/SnO2 composites is difficult to improve due to the poor distribution phas...Ag/SnO2,as a promising and environment-friendly electrical contact material,is widely applied in low-voltage apparatus.But the properties of Ag/SnO2 composites is difficult to improve due to the poor distribution phases and difficult component design.In this work,the Ag/SnO2 composites are prepared by selective laser melting.To get better performance,Ag/SnO2 composites with different energy density were studied.The microstructure was observed by field emission scanning electron microscope.In addition,reinforced SnO2 phase was characterized by X-ray diffraction and transmission electron microscope.The results indicated that the microstructure,relative density and hardness of are influenced by energy density,while Ag/SnO2 composites with homogeneous microstructure,high relative density,higher hardness and lower electrical resistivity can be obtained by proper energy density(E?68 J/mm^3).展开更多
Mo thin fihns are deposited on soda lime glass （SLG） substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5μm to gain a better understanding of the growth process of the f...Mo thin fihns are deposited on soda lime glass （SLG） substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of fihn growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1μm as the back contact, the Cu（InGa）Se2 solar cell can reach a conversion efficiency of 13.15%.展开更多
文摘采用溶胶-凝胶法和化学沉积法制备了Li4Ti4.75Cu0.25O12/SnO2复合活性材料。通过X射线衍射（XRD）、扫描电镜（SEM）、恒流充放电测试对材料进行结构、形貌表征及电化学性能测试。结果表明：Li4Ti4.75Cu0.25O12/SnO2复合活性物质能够进一步改善倍率性能的同时,循环性能也得到了很好的保证。当电压在1~3 V时,电流密度为1C倍率条件下,Li4Ti4.75Cu0.25O12/SnO2复合材料首次放电比容量高达202.55 m A·h/g。经过50次循环后,容量仍保持在202.51 m A·h/g,容量保持率高达99.98%。
文摘To fabricate a heterostructure solar cell using environmentally friendly materials and low cost techniques, tin oxide (SnO2) and cuprous oxide (Cu2O) were deposited by the sol-gel method and the electrochemical deposition, respectively. The SnO2 films were deposited from a SnCl2 solution containing ethanol and acetic acid. The Cu2O films were deposited using a galvanostatic method from an aqueous bath containing CuSO4 and lactic acid at a temperature of 40°C. The Cu2O/SnO2 heterostructure solar cells showed rectification and photovoltaic properties, and the best cell showed a conversion efficiency of 6.6 × 10-2 % with an open-circuit voltage of 0.29 V, a short-circuit current of 0.58 mA/cm2, and a fill factor of 0.39.
基金National Major Scientific&Technological Achievement Transformation Project
文摘According to the principle that fiber-like arrangement of reinforcing particles SnO2 paralleling to the direction of current is propitious to the electrical and mechanical performance of the electrical contact materials, we proposed and reported a novel precursor route used to prepare Ag/SnO,. electrical contact material with fiber- like arrangement of reinforcing nanoparticles. The mechanism for the formation of fiber-like arrangement of rein- forcing nanoparticles in Ag/SnO2 electrical contact material was also discussed. The as-prepared samples were char- acterized by means of scanning electron microscope （SEM）, optical microscope （OM）, energy-dispersive X-ray spectroscopy （EDX）, MHV2000 microhardness test, and double bridge tester. The analysis showed that the as-prepared Ag/SnO,, electrical contact material with fiber-like arrangement of reinforcing nanoparticles exhibits a high elongation of 24 %, a particularly low electrical resistivity of 2.08 μΩ. cm, and low arcing energy, and thus has considerable technical, economical and environmental benefits.
文摘Porous Cu-doped SnO<sub>2</sub> thin films were synthesized by the sol-gel dip-coating method for enhancing methanol sensing performance. The effect of Cu doping concentration on the SnO<sub>2</sub> sensibility was investigated. XRD data confirm that the fabricated SnO<sub>2</sub> films are polycrystalline with tetragonal rutile crystal structure. AFM and SEM micrographs confirmed the roughness and the porosity of SnO<sub>2</sub> surface, respectively. UV-Vis spectrum shows that SnO<sub>2</sub> thin films exhibit high transmittance in the visible region ~95%. The band gap (3.80 - 3.92 eV) and the optical thickness (893 - 131 nm) of prepared films were calculated from transmittance data. The sensing results demonstrate that SnO<sub>2</sub> films have a high sensitivity and a fast response to methanol. In particular, 3% Cu-SnO<sub>2</sub> films have a higher sensitivity (98%), faster response (10-<sup>2</sup> s) and shorter recovery time (18 s) than other films.
文摘我国高速铁路发展迅速,未来其运行速度将达到400 km/h及以上。针对更高速铁路中弓网受流质量变化,首先研究Cu-Al_(2)O_(3)弥散铜接触线材质性能,然后采用受电弓的三元集中质量块单元和弹性链型悬挂接触网的接触单元,建立弓网耦合动力学模型并借助ANSYS有限元分析软件进行仿真,分析弓网系统在350,380,400和420 km/h 4种速度下受流情况。研究结果表明:使用张力为34 kN时,满足冲击载荷及静载荷条件下的使用安全性,随着列车运行速度增加动态接触压力变化幅度明显增大,其中最大动态接触压力、最小动态接触压力、平均动态接触压力及标准偏差基本满足《高速铁路工程动态验收技术规范》中弓网受流质量评价标准。
基金conducted under FRGS Grant:203/PFIZIK/6711197 the support from Universiti Sains Malaysia gratefully acknowledged
文摘In this paper, high-quality nanocrystalline SnO_2 thin film was grown on bare Si(100) substrates by a sol–gel method. A metal–semiconductor–metal gas sensor was fabricated using nanocrystalline SnO_2 thin film and palladium(Pd)metal. The contact between Pd and nanocrystalline SnO_2 film is tunable. Ohmic barrier contact was formed without addition of glycerin, while Schottky contact formed by adding glycerin. Two kinds of sensor devices with Schottky contact were fabricated(Device 1: 8 h, 500 °C; Device 2: 10 h, 400 °C). The room temperature sensitivity for hydrogen(H_2) was120 and 95 % in 1000 ppm H_2, and the low power consumption was 65 and 86 l W for two devices, respectively. At higher temperature of 125 °C, the sensitivity was increased to 195 and 160 %, respectively. The sensing measurements were repeatable at various temperatures(room temperature, 75, 125 °C) for over 50 min. It was found that Device 1 has better sensitivity than Device 2 due to its better crystallinity. These findings indicate that the sensors fabricated on bare Si by adding glycerin to the sol solution have strong ability to detect H_2 gas under different concentrations and temperatures.
基金sponsored by the Natural Science Foundation of China (Grant nos. 51775208)the Hubei Science Fund for Distinguished Young Scholars (No. 0216110085)+2 种基金the National Key Research and Development Program “Additive Manufacturing and Laser Manufacturing”(No. 2016YFB1100101)Wuhan Morning Light Plan of Youth Science and Technology (No. 0216110066)the Academic frontier youth team at Huazhong University of Science and Technology (HUST)
文摘Ag/SnO2,as a promising and environment-friendly electrical contact material,is widely applied in low-voltage apparatus.But the properties of Ag/SnO2 composites is difficult to improve due to the poor distribution phases and difficult component design.In this work,the Ag/SnO2 composites are prepared by selective laser melting.To get better performance,Ag/SnO2 composites with different energy density were studied.The microstructure was observed by field emission scanning electron microscope.In addition,reinforced SnO2 phase was characterized by X-ray diffraction and transmission electron microscope.The results indicated that the microstructure,relative density and hardness of are influenced by energy density,while Ag/SnO2 composites with homogeneous microstructure,high relative density,higher hardness and lower electrical resistivity can be obtained by proper energy density(E?68 J/mm^3).
文摘Mo thin fihns are deposited on soda lime glass （SLG） substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of fihn growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1μm as the back contact, the Cu（InGa）Se2 solar cell can reach a conversion efficiency of 13.15%.
