Effect of carbide formers on microstructure and thermal conductivity of diamond-Cu composites for heat sink materials

Diamond-copper composites were prepared by powder metallurgy,in which the diamond particles were pre-coated by magnetic sputtering with copper alloy containing a small amount of carbide forming elements(including B,Cr,Ti,and Si).The influence of the carbide forming element additives on the microstructure and thermal conductivity of diamond composites was investigated.It is found that the composites fabricated with Cu-0.5B coated diamond particles has a relatively higher density and its thermal conductivity approaches 300 W/(m·K).Addition of 0.5%B improves the interfacial bonding and decreases thermal boundary resistance between diamond and Cu,while addition of 1%Cr makes the interfacial layer break away from diamond surface.The actual interfacial thermal conductivity of the composites with Cu-0.5B alloy coated on diamond is much higher than that of the Cu-1Cr layer,which suggests that the intrinsic thermal conductivity of the interfacial layer is an important factor for improving the thermal conductivity of the diamond composites.

Properties and microstructure of Cu/diamond composites prepared by spark plasma sintering method

Cu/diamond composites have been considered as the next generation of thermal management material for electronic packages and heat sinks applications. Cu/diamond composites with different volume fractions of diamond were successfully prepared by spark plasma sintering（SPS） method. The sintering temperatures and volume fractions（50%, 60% and 70%） of diamond were changed to investigate their effects on the relative density, homogeneity of the microstructure and thermal conductivity of the composites. The results show that the relative density, homogeneity of the microstructure and thermal conductivity of the composites increase with decreasing the diamond volume fraction; the relative density and thermal conductivity of the composites increase with increasing the sintering temperature. The thermal conductivity of the composites is a result of the combined effect of the volume fraction of diamond, the homogeneity and relative density of the composites.

Preparation and electrochemical property of Cs0.35V2O5/Cu composite material

Cs0.35V2O5 was successfully synthesized as cathode material for lithium secondary battery by the rheological phase reaction method from Cs2CO3 and NH4VO3. The Cs0.35V2O5/Cu composite material was prepared by the displacement reaction in CuSO4 solution using zinc powder as a reductant. The structure and electrochemical property of the so-prepared powders were characterized by means of XRD （powder X-ray diffraction） and the galvanostatic discharge-charge techniques. The results show that the electrochemical property of Cs0.35V2O5/Cu composite material is significantly improved compared to the bulk Cs0.35V2O5 material. The Cs0.35V2O5/Cu composite material exhibits the first discharge capacity as high as 164.3 mAh.g -1 in the range of 4.2-1.8V at a current rate of 10 mA.g-1 and remains at a stable discharge capacity of about 110 mAh.g-1 within 40 cycles.

WEAR TRANSITIONS OF C/Cu COMPOSITE MATERIALS

An unlubricated sliding friction test on C/Cu composite materials is described. The result of the test proves that adhesive wear is the domination. At a certain speed, when the load upon the test block is light, the wear rate remains low level and the friction pair has a good antifriction performance. But when the load increases to a certain value, the wear transitions happen, the wear becomes severe.

Microstructure and properties of Cu matrix composites reinforced with surface-modified Kovar particles

The thermal conductivity of Cu/Kovar composites was improved by suppressing element diffusion at the interfaces through the formation of FeWO_(4)coating on the Kovar particles via vacuum deposition.Cu matrix composites reinforced with unmodified(Cu/Kovar)and modified Kovar(Cu/Kovar@)particles were prepared by hot pressing.The results demonstrate that the interfaces of Cu/FeWO_(4)and FeWO_(4)/Kovar in the Cu/Kovar@composites exhibit strong bonding,and no secondary phase is generated.The presence of FeWO_(4)impedes interfacial diffusion within the composite,resulting in an increase in grain size and a decrease in dislocation density.After surface modification of the Kovar particle,the thermal conductivity of Cu/Kovar@composite is increased by 110%from 40.6 to 85.6 W·m^(-1)·K^(-1).Moreover,the thermal expansion coefficient of the Cu/Kovar@composite is 9.8×10^(-6)K^(-1),meeting the electronic packaging requirements.

Low-temperature heat conduction characteristics of diamond/Cu composite by pressure infiltration method

In this paper,diamond/CuCr and diamond/CuB composites were prepared using the pressure infiltration method.The physical property measurement system(PPMS)was adopted to evaluate the thermal conductivity of diamond/Cu and MoCu composites within the range of100–350 K,and a scanning electron microscope(SEM)was utilized to analyze the microstructure and fracture appearance of the materials.The research indicates that the thermal conductivity of diamond/Cu composite within the range of100–350 K is 2.5–3.0 times that of the existing MoCu material,and the low-temperature thermal conductivity of diamond/Cu composite presents an exponential relationship with the temperature.If B element was added to a Cu matrix and a low-temperature binder was used for prefabricated elements,favorable interfacial adhesion,relatively high interfacial thermal conductivity,and favorable low-temperature heat conduction characteristics would be apparent.

Effects of rolling and annealing on microstructures and properties of Cu/Invar electronic packaging composites prepared by powder metallurgy

The Cu/Invar composites of 40% Cu were prepared by powder metallurgy, and the composites were rolled with 70% reduction and subsequently annealed at 750 ℃. Phases, microstructures and properties of the composites were then studied. After that, the amount of a-Fe（Ni,Co） in the composites is reduced, because a-Fe（Ni,Co） partly transfers into y-Fe（Ni,Co） through the diffusion of the Ni atoms into a-Fe（Ni,Co） from Cu. When the rolling reduction is less than 40%, the deformation of Cu takes place, resulting in the movement of the Invar particles and the seaming of the pores. When the rolling reduction is in the range from 40% to 60%, the deformations of Invar and Cu occur simultaneously to form a streamline structure. After rolling till 70% and subsequent annealing, the Cu/Invar composites have fine comprehensive properties with a relative density of 98.6%, a tensile strength of 360 MPa, an elongation rate of 50%, a thermal conductivity of 25.42 W/（m.K） （as-tested） and a CTE of 10.79× 10-6/K （20-100 ℃）.

Microstructure and thermal conductivity of copper matrix composites reinforced with mixtures of diamond and SiC particles

The thermal conductivity of diamond hybrid SiC/Cu,diamond/Cu and SiC/Cu composite were calculated by using the extended differential effective medium (DEM) theoretical model in this paper.The effects of the particle volume fraction,the particle size and the volume ratio of the diamond particles to the total particles on the thermal conductivity of the composite were studied.The DEM theoretical calculation results show that,for the diamond hybrid SiC/Cu composite,when the particle volume fraction is above 46% and the volume ratio of the diamond particles to the SiC particles is above 13:12,the thermal conductivity of the composite can reach 500 W·m-1·K-1.The thermal conduc-tivity of the composite has little change when the particle size is above 200μm.The experimental results show that Ti can improve the wettability of the SiC and Cu.The thermal conductivity of the diamond hybrid SiCTi/Cu is almost two times better than that of the diamond hybrid SiC/Cu.It is feasible to predict the thermal conductivity of the composite by DEM theoretical model.

Improvement of the matrix and the interface quality of a Cu/Al composite by the MARB process

The matrix accumulative roll bonding technology （MARB） can improve the matrix performance of metal composite and strengthen the bonding quality of the interface./n this research, for the fwst time, the technology of MARB was proposed. A sound Cu/AI bonding composite was obtained using the MARB process and the bonding characteristic of the interface was studied using scanning electricity microscope （SEM） and energy-dispersive spectroscopy （EDS）. The result indicated that accumulation cycles and diffusion annealing temperature were the most important factors for fabricating a Cu/AI composite material. The substrate aluminum was strengthened by MARB, and a high quality Cu/AI composite with sound interface was obtained as well.

A Novel Technique for Preparation of Electrically Conductive ABS/Cu Polymeric Gradient Composites

A novel technique for preparing functionally gradient electrically conductive polymeric composites was developed by using of solution casting technique on the principle of Stokes＇ law. Acrylonitrile- butadiene-styrene/Cu （ABS/Cu） gradient polymeric composites were prepared successfully using this technique. The gradient structures, electrically conductive performance and mechanical properties of the ABS/Cu composites were investigated. Optical microscope observation shows that the gradient distribution of Cu particles in ABS matrix was formed along their thickness-direction. The electrically conductive testing results indicate that the order of magnitude of surface resistivity was kept in 10^15 Ω at ABS rich side, while that declined to 10^5 Ω at Cu particles rich side, and the percolation threshold was in the range of 2.82 vo1%- 4.74 vol% Cu content at Cu particles rich side. Mechanical test shows that the tensile strength reduced insignificantly as the content of Cu increases owing to the gradient distribution.

MECHANICAL PROPERTIES OF HOT PRESSED ZINC SULPHIDEDIAMOND COMPOSITES

ZnS-Diatnond cotnPOsites (ZnS/D) were fabricated by hot pressing to obtain a ZnS ithered transparent materials with incmeed toughness. The relations of the mechanical properties and the diomond contents were investigated. It was determined that,when the content of diamond is in the mnge hem 1% to 10%, the toughness of the composite fits the equation KIC = cexp(a+bx). The constants c, a, and b determined experimentally are 10-6, d.47 and 9.70 respectively.

Oxidized film on C_p/Cu-Cd electrical contact material

Constituents of the oxidized surface film on diamond particles reinforced Cu-Cd alloy matrix composite （Cp/Cu-Cd） were investigated by XPS. The results show that Cu2O is the main constituent when the oxidized film is thin; CuO appears only after the film is rather thick. The originally formed oxidized film on the Cp/Cu-Cd is about 10nm in thickness and is mainly composed of Cu2O and Cu. After oxidized at 120℃ over 30h, CuO is detected in the film.

Atom Diffusion Behavior and Bonding Strength of Ag/Cu Composite Interface

The atom (Ag,Cu) diffusion behavior and the effect of technology on the interface of rolled Ag/Cu composite contact were investigated. The concentration of Ag and Cu atoms near the interface was determined with electron probe. The bonding strength of composite interface was tested and the fracture in tensile sample was observed by SEM. The results show that there was inter diffusion of Ag and Cu atoms on the interface, which formed compact layer with high bonding strength of 98 MPa. The practical application proved that the Ag/Cu composite interface is reliable.

Influence of Microstructure Refinement on Strain Strengthening Effect of Cu-Ag Alloy in situ Filamentary Composites

The Cu-10Ag and Cu-10Ag-RE （RE=Ce, Y） alloys in situ filamentary composites were prepared. The relationships of the ultimate tensile strengths （UTS） and microstructure changes of the composites were studied. With increasing of the true strain η, the sizes of the Ag filaments in the composites reduce according to a negative exponential function of η:d=d0·exp（-0.228η）, and the UTS of the composites increase also according to a exponential function of η, σ Cu/Ag=σ 0（Cu）+[k Cu/Agd0 -1/2]exp（η/3）, here d0 is a coefficient related to the original size of Ag phase. The strain strengthening follows a two-stage strengthening effect. The strengthening mechanisms are related to changes of microstructure in the deformation process. At the low true strain stage, the strengthening is mainly caused by the working hardening controlled by dislocation increasing; at the high true strain stage, the strengthening is mainly caused by the super-fine Ag filaments and the large coherent interfaces between the Ag filaments and Cu matrix. The trace RE additions and the rapid solidification obviously refine scales of the Ag filament of the composites, and therefore obviously increased the strain strengthening rate. The microstructure refinement of the composites, especially the refinement of Ag filament, is the main reason of the high strain strengthening effect in Cu-Ag alloy in situ filamentary composites.

Cu-Diamond复合材料的多次电弧烧蚀性能研究

采用真空热压烧结法制得金刚石分布均匀,且与铜基结合良好的Cu-Diamond复合材料(金刚石体积分数为5%)。在空气气氛中对Cu-5vol.%Diamond复合材料进行多次电弧烧蚀,通过场发射扫描电子显微镜(SEM)和三维激光共聚焦显微镜(3D LSCM)对烧蚀表面进行观察分析,利用能谱仪(EDS)和X射线光电子能谱仪(XPS)对烧蚀后的成分进行分析,结果表明,经过100次9 kV高电压电弧烧蚀后,复合材料烧蚀区域中的铜基体出现熔化和溅射,并被氧化成了CuO和Cu_(2)O,同时金刚石颗粒较大幅度提高了该复合材料的抗电弧烧蚀能力。

三维互穿结构Cu-W触头抗熔焊机理

触头闭合回跳电弧引起的开关电器动熔焊问题,直接影响大功率接触器的电寿命和可靠性。为此设计了2种三维互穿有序结构的四边形和菱形十二面体的Cu-W复合材料触头,围绕触头动熔焊过程中的电弧、熔池、液滴溅射及凝固相变降温等问题,建立触头熔池流体动力学模型和冷凝降温数学模型,研究了2种有序结构和商用无序结构的触头阳极在闭合回跳电弧作用下熔化温度分布、熔池喷溅形貌和接触区域金属凝固过程,通过模拟熔焊实验平台进行了熔焊力验证。结果表明,通过调节三维互穿有序W骨架结构,能够有效抑制熔池扩散和液态金属喷溅,并降低熔焊力,从而提高Cu-W复合材料的抗熔焊性能。

电子封装用Diamond/Cu复合材料的化学镀镍

通过采用在Diamond/Cu复合材料表面化学镀镍的方法来改善其焊接性。化学镀镍前,采用SnCl2溶液和PdCl2溶液对复合材料表面进行敏化、活化等预处理。研究了pH值和温度对化学镀镍沉积速度的影响。利用SEM、EDX、XRD和划痕实验等措施对镀层进行了研究,结果表明,在Diamond/Cu复合材料表面获得了均匀、致密、结合牢固的Ni-P合金镀层。镀层为中磷镀层,属于微晶结构。

Effects of submicron diamonds on the growth of copper in Cu-diamond co-deposition

Submicron diamonds were co-deposited on aluminum substrates with copper from the acid copper sulfate electrolyte by electro- lyte-suspension co-deposition. After submicron diamonds were added to the electrolyte, the shape of copper grains transformed from oval or round to polyhedron, the growth mode of copper grains transformed from columnar growth to gradual change in size, and the preferred ori- entation of copper grains transformed from （220） to （200）. Analyzing the variation of cathodic overpotential, it was found that the cathodic overpotential tended to remain tmchanged when copper plane （220） grew in the process of electrodepositing pure copper, while it tended to decrease with time when copper plane （200） grew in the process of co-deposition. It was inferred that copper plane （200） was propitious to the deposition of submicron diamonds.

SiC掺杂量对Diamond/Cu复合材料导热性能的影响

采用超高压熔渗法制备了Diamond/SiC/Cu复合材料,通过研究不同SiC含量下样品的热导率变化规律及界面性能,提出孤立界面模型。主要阐释孤立界面模型的适用条件、主要内容及定量公式。通过孤立界面模型,说明低SiC掺杂量的必要性和Diamond骨架对于复合材料导热性能的重要性。结果表明,SiC最佳掺杂量为15%,此时复合材料的综合性能最优:热导率526.7 W·m-1·K-1,热膨胀系数2.4 ppm/K,密度3.74 g/cm3,节省原料成本近15%。

金刚石粒径对金刚石/Cu-B合金复合材料热物理性能的影响

采用Cu-B合金为基体,选用粒径分别为110、230、550μm的金刚石颗粒作为增强体,利用气压熔渗工艺在1100℃、10 MPa气体压力下制备金刚石/Cu-B合金复合材料,研究金刚石颗粒粒径对复合材料组织结构、界面相分布及热物理性能的影响。结果表明,随着金刚石粒径的增大,复合材料热导率上升,热膨胀系数减小,复合材料界面处硼碳化合物含量增加,界面结合情况得到改善。由金刚石颗粒粒径为550μm时,复合材料热导率最高,可达680.3 W/(m·K),热膨胀系数最小,为4.905×10^(−6)K^(−1),符合高效热管理器件对金刚石/金属基复合材料的热物理性能要求,在电子产品散热器件方面具有良好的应用前景。