CUIn1-xGaxSe2 （CIGS） films were prepared by a two-stage method, in which Cu-In-Ga metallic precursors were firstly deposited on unheated Mo-coated soda lime glass substrates by direct current sputtering CuGa （20%Ga...CUIn1-xGaxSe2 （CIGS） films were prepared by a two-stage method, in which Cu-In-Ga metallic precursors were firstly deposited on unheated Mo-coated soda lime glass substrates by direct current sputtering CuGa （20%Ga） and radio frequency sputtering In targets in an Ar atmosphere, followed by selenization at 520 ℃ for 40 min in Se vapor. By adjusting the sputtering thickness ratio of surface CuGa （20%Ga） and bottom CuGa （20%Ga） alloy layers in metal precursor, different CIGS thin films were fabricated. Through X-ray diffraction spectra, Raman spectra, local energy dispersive spectrometer, planar- and cross- sectional views of scanning electron microscopy measurements, it revealed that the CIGS thin films from selenization of metal precursor with CuGa：In：CuGa thickness ratio of 7：20：3 （sample-2-se） was of chalcopyrite structure with the preferred （112） orientation, and the grains sizes ranged from 0.5 μm to 2 μm, and sample-2-se had no binary compound phase of In-Se and order defect compound phase. Consequently, the results of illuminated current- voltage curve and quantum efficiency measurements showed that the CIGS film device made from sample-2-se had relative higher photo-electric conversion efficiency （3.59%） and good spectrum response.展开更多
In this paper the dependence of structural properties of the quaternary CuIn1-xGaxSe2 films with tetragonal structure on the Ga content has been systematically investigated by Raman scattering and x-ray diffraction sp...In this paper the dependence of structural properties of the quaternary CuIn1-xGaxSe2 films with tetragonal structure on the Ga content has been systematically investigated by Raman scattering and x-ray diffraction spectra. The shift of the dominant A1 mode, unlike the lattice constants, does not follow the linear Vegard law with increasing Ga content x, whereas exhibits approximately polynomial change from 174 cm^-1 for CuInSe2 to 185 cm^-1 for CuGaSe2. Such behaviour should be indicative of presence of the asymmetric distribution of Ga and In on a microscopic scale in the films, due to Ga addition. The changes in the tetragonal distortion η lead to a significant variation in the anion displacement parameter U, which should be responsible for the evolution of bond parameters and resultant Raman bands with x.展开更多
文摘CUIn1-xGaxSe2 （CIGS） films were prepared by a two-stage method, in which Cu-In-Ga metallic precursors were firstly deposited on unheated Mo-coated soda lime glass substrates by direct current sputtering CuGa （20%Ga） and radio frequency sputtering In targets in an Ar atmosphere, followed by selenization at 520 ℃ for 40 min in Se vapor. By adjusting the sputtering thickness ratio of surface CuGa （20%Ga） and bottom CuGa （20%Ga） alloy layers in metal precursor, different CIGS thin films were fabricated. Through X-ray diffraction spectra, Raman spectra, local energy dispersive spectrometer, planar- and cross- sectional views of scanning electron microscopy measurements, it revealed that the CIGS thin films from selenization of metal precursor with CuGa：In：CuGa thickness ratio of 7：20：3 （sample-2-se） was of chalcopyrite structure with the preferred （112） orientation, and the grains sizes ranged from 0.5 μm to 2 μm, and sample-2-se had no binary compound phase of In-Se and order defect compound phase. Consequently, the results of illuminated current- voltage curve and quantum efficiency measurements showed that the CIGS film device made from sample-2-se had relative higher photo-electric conversion efficiency （3.59%） and good spectrum response.
基金Project supported by China Postdoctoral Science Foundation （Grant No 2005037539）, and the National High-Tech Research and Development Programm of China （Grant No 2004AA513020）. Acknowledgments 0ne of the authors （Xu Chuan-Ming） gratefully acknowledges Professor Xu Cun-Yi from the Structure Research Laboratory of Chinese Academy of Sciences for the sample measurements.
文摘In this paper the dependence of structural properties of the quaternary CuIn1-xGaxSe2 films with tetragonal structure on the Ga content has been systematically investigated by Raman scattering and x-ray diffraction spectra. The shift of the dominant A1 mode, unlike the lattice constants, does not follow the linear Vegard law with increasing Ga content x, whereas exhibits approximately polynomial change from 174 cm^-1 for CuInSe2 to 185 cm^-1 for CuGaSe2. Such behaviour should be indicative of presence of the asymmetric distribution of Ga and In on a microscopic scale in the films, due to Ga addition. The changes in the tetragonal distortion η lead to a significant variation in the anion displacement parameter U, which should be responsible for the evolution of bond parameters and resultant Raman bands with x.
