Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemi...Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemical deposition method is used to prepare ZnO/CuO/Al energetic diode,in which N-type ZnO and P-type CuO are constricted to a PN junction.This paper comprehensively discusses the material properties,morphology,semiconductor characteristics,and exploding performances of the energetic diode.Experimental results show that the energetic diode has typical rectification with a turn-on voltage of about 1.78 V and a reverse leakage current of about 3×10^(-4)A.When a constant voltage of 70 V loads to the energetic diode in the forward direction for about 0.14 s or 55 V loads in the reverse direction for about 0.17 s,the loaded power can excite the energetic diode exploding and the current rises to about100 A.Due to the unique performance of the energetic diode,it has a double function of rectification and explosion.The energetic diode can be used as a logic element in the normal chip to complete the regular operation,and it can release energy to destroy the chip accurately.展开更多
2D MXenes are highly attractive for fabricating high-precision gas sensors operated at room temperature(RT)due to their high surface-to-volume ratio.However,the limited selectivity and low sensitivity are still long-s...2D MXenes are highly attractive for fabricating high-precision gas sensors operated at room temperature(RT)due to their high surface-to-volume ratio.However,the limited selectivity and low sensitivity are still long-standing challenges for their further applications.Herein,the self-assembly of 0D-2D heterostructure for highly sensitive NO_(2) detection was achieved by integrating ZnO nanoparticles on Ti_(3)C_(2)Tx MXene-derived TiO_(2) nanosheets(designated as ZnO@MTiO_(2)).ZnO nanoparticles can not only act as spacers to prevent the restacking of MTiO_(2) nanosheets and ensure effective transfer for gas molecules,but also enhance the sensitivity of the sensor the through trapping effect on electrons.Meanwhile,MTiO_(2) nanosheets facilitate gas diffusion for rapid sensor response.Benefiting from the synergistic effect of individual components,the ZnO@MTiO_(2)0D-2D heterostructure-based sensors revealed remarkable sensitivity and excellent selectivity to low concentration NO_(2) at RT.This work may facilitate the sensing application of MXene derivative and provide a new avenue for the development of high-performance gas sensors in safety assurance and environmental monitoring.展开更多
ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, t...ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.展开更多
Light confinement induced by spontaneous near-surface resonance is inherently determined by the location and geometry of metallic nanostructures(NSs),offering a facile and effective approach to break through the limit...Light confinement induced by spontaneous near-surface resonance is inherently determined by the location and geometry of metallic nanostructures(NSs),offering a facile and effective approach to break through the limitation of the light-mater interaction within the photoactive layers.Here,we demonstrate high-performance Al NS/ZnO quantum dots(Al/ZnO) heterostructure UV photodetectors with controllable morphologies of the self-assembled Al NSs.The Al/ZnO heterostructures exhibit a superior light utilization than the ZnO/Al heterostructures,and a strong morphological dependence of the Al NSs on the optical properties of the heterostructures.The inter-diffusion of Al atoms into ZnO matrixes is of a great benefit for the carrier transportation.Consequently,the optimal photocurrent of the Al/ZnO heterostructure photodetectors is significantly increased by 275 times to ~1.065 mA compared to that of the pristine ZnO device,and an outstanding photoresponsivity of 11.98 A W-1 is correspondingly achieved under 6.9 MW cm-2 UV light illumination at 10 V bias.In addition,a relatively fast response is similarly witnessed with the Al/ZnO devices,paving a path to fabricate the high-performance UV photodetectors for applications.展开更多
The paper reports the fabrication of Zn-doped TiO_2 nanotubes(Zn-TONT)/ZnO nanoflakes heterostructure for the first time,which shows improved performance as a photoanode in dye-sensitized solar cell(DSSC).The layered ...The paper reports the fabrication of Zn-doped TiO_2 nanotubes(Zn-TONT)/ZnO nanoflakes heterostructure for the first time,which shows improved performance as a photoanode in dye-sensitized solar cell(DSSC).The layered structure of this novel nanoporous structure has been analyzed unambiguously by Rutherford backscattering spectroscopy,scanning electron microscopy,and X-ray diffractometer.The cell using the heterostructure as photoanode manifests an enhancement of about an order in the magnitude of the short circuit current and a seven-fold increase in efficiency,over pure TiO_2 photoanodes.Characterizations further reveal that the Zn-TONT is preferentially oriented in [001] direction and there is a Ti metal-depleted interface layer which leads to better band alignment in DSSC.展开更多
The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a ...The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V ~ V 〈 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages （V 〉 0.6 V）, the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm^2, respectively.展开更多
ZnO-MxOy heterostructures (M=Co, Mn, Ni, or In) are fabricated via hydrothermal synthesis method. X-ray diffraction and Fourier-transform infrared spectroscopy analyses endorse the successive formation of the various ...ZnO-MxOy heterostructures (M=Co, Mn, Ni, or In) are fabricated via hydrothermal synthesis method. X-ray diffraction and Fourier-transform infrared spectroscopy analyses endorse the successive formation of the various heterostructures. Field Emission Scanning electron microscope and Brunauer-Emmett-Teller (BET) surface area studies confirm the porous nature of the heterostructures obtained. The band gaps of various heterostructures are calculated that, 3.1, 2.71, 2.64, and 2.19 eV for ZnO-NiO, ZnO-In2O3, ZnO-Co3O4, and ZnO-MnO2, respectively. The photocatalytic activities of the fabricated heterostructures are investigated through the degradation of phenol under direct sunlight irradiation. The results show that the photocatalytic activity is affected by the conduction band (CB) and valence band (VB) positions rather than surface area of ZnO-MxOy heterostructure nanocomposites.展开更多
基金the National Natural Science Foundation of China(Grant Nos.22275092,52372084)the Fundamental Research Funds for the Central Universities(Grant No.30923010920)。
文摘Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemical deposition method is used to prepare ZnO/CuO/Al energetic diode,in which N-type ZnO and P-type CuO are constricted to a PN junction.This paper comprehensively discusses the material properties,morphology,semiconductor characteristics,and exploding performances of the energetic diode.Experimental results show that the energetic diode has typical rectification with a turn-on voltage of about 1.78 V and a reverse leakage current of about 3×10^(-4)A.When a constant voltage of 70 V loads to the energetic diode in the forward direction for about 0.14 s or 55 V loads in the reverse direction for about 0.17 s,the loaded power can excite the energetic diode exploding and the current rises to about100 A.Due to the unique performance of the energetic diode,it has a double function of rectification and explosion.The energetic diode can be used as a logic element in the normal chip to complete the regular operation,and it can release energy to destroy the chip accurately.
基金supported by the National Natural Science Foundation of China(No.52103308)the Natural Science Foundation of Jiangsu Province of China(No.BK20210826)+4 种基金Outstanding Youth Foundation of Jiangsu Province of China(No.BK20211548)National Key Research and Development Program of China(No.2017YFE0115900)Innovative Science and Technology Platform Project of Cooperation between Yangzhou City and Yangzhou University(No.YZ2020266)Lvyang Jinfeng Plan for Excellent Doctor of Yangzhou City,Special Funds for Self-Made Experimental Equipment of Yangzhou Universitythe Doctor of Suzhou University Scientific Research Foundation Project(No.2022BSK003).
文摘2D MXenes are highly attractive for fabricating high-precision gas sensors operated at room temperature(RT)due to their high surface-to-volume ratio.However,the limited selectivity and low sensitivity are still long-standing challenges for their further applications.Herein,the self-assembly of 0D-2D heterostructure for highly sensitive NO_(2) detection was achieved by integrating ZnO nanoparticles on Ti_(3)C_(2)Tx MXene-derived TiO_(2) nanosheets(designated as ZnO@MTiO_(2)).ZnO nanoparticles can not only act as spacers to prevent the restacking of MTiO_(2) nanosheets and ensure effective transfer for gas molecules,but also enhance the sensitivity of the sensor the through trapping effect on electrons.Meanwhile,MTiO_(2) nanosheets facilitate gas diffusion for rapid sensor response.Benefiting from the synergistic effect of individual components,the ZnO@MTiO_(2)0D-2D heterostructure-based sensors revealed remarkable sensitivity and excellent selectivity to low concentration NO_(2) at RT.This work may facilitate the sensing application of MXene derivative and provide a new avenue for the development of high-performance gas sensors in safety assurance and environmental monitoring.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 50472009, 10474091 and 50532070)
文摘ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.
基金the National Natural Science Foundation of China(Grant Nos.61705070 and 61974052)China Postdoctoral Science Foundation(Grant Nos.2019M662594)National Research Foundation of Korea(NRF)Grant funded by the Korean Government(MSIP)(Nos.NRF2019R1A2C4069438 and NRF2018R1A6A1A03025242)。
文摘Light confinement induced by spontaneous near-surface resonance is inherently determined by the location and geometry of metallic nanostructures(NSs),offering a facile and effective approach to break through the limitation of the light-mater interaction within the photoactive layers.Here,we demonstrate high-performance Al NS/ZnO quantum dots(Al/ZnO) heterostructure UV photodetectors with controllable morphologies of the self-assembled Al NSs.The Al/ZnO heterostructures exhibit a superior light utilization than the ZnO/Al heterostructures,and a strong morphological dependence of the Al NSs on the optical properties of the heterostructures.The inter-diffusion of Al atoms into ZnO matrixes is of a great benefit for the carrier transportation.Consequently,the optimal photocurrent of the Al/ZnO heterostructure photodetectors is significantly increased by 275 times to ~1.065 mA compared to that of the pristine ZnO device,and an outstanding photoresponsivity of 11.98 A W-1 is correspondingly achieved under 6.9 MW cm-2 UV light illumination at 10 V bias.In addition,a relatively fast response is similarly witnessed with the Al/ZnO devices,paving a path to fabricate the high-performance UV photodetectors for applications.
基金UGC-DAE CSR,Indore,for funding through a collaborative project and SAIF IIT Bombay for the help with SEMsupported by the Michigan Space Grant Consortium+1 种基金by Hope CollegeDAE-BRNS for funding the preliminary works
文摘The paper reports the fabrication of Zn-doped TiO_2 nanotubes(Zn-TONT)/ZnO nanoflakes heterostructure for the first time,which shows improved performance as a photoanode in dye-sensitized solar cell(DSSC).The layered structure of this novel nanoporous structure has been analyzed unambiguously by Rutherford backscattering spectroscopy,scanning electron microscopy,and X-ray diffractometer.The cell using the heterostructure as photoanode manifests an enhancement of about an order in the magnitude of the short circuit current and a seven-fold increase in efficiency,over pure TiO_2 photoanodes.Characterizations further reveal that the Zn-TONT is preferentially oriented in [001] direction and there is a Ti metal-depleted interface layer which leads to better band alignment in DSSC.
基金Project supported by the Postdoctor Foundation of Hebei Province, Chinathe Natural Science Foundation of Hebei Province,China (Grant No. F2012201093)the Natural Science Foundation of Hebei University, China (Grant No. 2008127)
文摘The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V ~ V 〈 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages （V 〉 0.6 V）, the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm^2, respectively.
文摘ZnO-MxOy heterostructures (M=Co, Mn, Ni, or In) are fabricated via hydrothermal synthesis method. X-ray diffraction and Fourier-transform infrared spectroscopy analyses endorse the successive formation of the various heterostructures. Field Emission Scanning electron microscope and Brunauer-Emmett-Teller (BET) surface area studies confirm the porous nature of the heterostructures obtained. The band gaps of various heterostructures are calculated that, 3.1, 2.71, 2.64, and 2.19 eV for ZnO-NiO, ZnO-In2O3, ZnO-Co3O4, and ZnO-MnO2, respectively. The photocatalytic activities of the fabricated heterostructures are investigated through the degradation of phenol under direct sunlight irradiation. The results show that the photocatalytic activity is affected by the conduction band (CB) and valence band (VB) positions rather than surface area of ZnO-MxOy heterostructure nanocomposites.
基金National Natural Science Foundation of China(21076206)Natural Basic Research Program of China(973 Program,2010CB732302)National High Technology Research and Development Program(863 Program,2011AA050706)
