The effect of rapid thermal annealing （RTA） ambient on denuded zone and oxygen precipitates in Czochralski （CZ） silicon wafers is studied in this paper. N2 and a N2/NH3 mixture are used as RTA ambient. It is demon...The effect of rapid thermal annealing （RTA） ambient on denuded zone and oxygen precipitates in Czochralski （CZ） silicon wafers is studied in this paper. N2 and a N2/NH3 mixture are used as RTA ambient. It is demonstrated that a high density of oxygen precipitates and thin denuded zone are obtained in N2/NH3 ambient,while a relatively lower density of oxygen precipitates and thicker denuded zone are observed in N2 ambient. As the RTA duration times increased, the oxygen precipitate density increased and the denuded zone depth decreased. X-ray photoelectron spectroscopy （XPS） data and atomic force microscope （AFM） results show that there RTA process,which can explain the different effect of RTA was a surface nitriding reaction during the N2/NH3 ambient ambient.展开更多
Bulk Czochralski silicon crystals were decorated with Cu and characterized by transmission electron microscopy (TEM) with energy-dispersive spectroscopy (EDS), atomic force microscopy (AFM), optical microscopy (OM), s...Bulk Czochralski silicon crystals were decorated with Cu and characterized by transmission electron microscopy (TEM) with energy-dispersive spectroscopy (EDS), atomic force microscopy (AFM), optical microscopy (OM), scanning electron microscopy (SEM), and photoluminescence spectroscopy (PL). The vacancy-type core, oxidation-induced stacking faults (OISF) ring, nearly defect-free ring, and self-interstitial-type rich outer ring were delineated in the Si crystal wafer. At the surface of the Si crystal, vertical-horizontal line (V-H line) defects and windmill defects (W-defects) were formed instead of OISF. The families of growth planes and directions were expressed as {011} and for the V-H line and {010} and for W-defects, respectively. In addition to V-H line defects and W-defects, pits or voids and Si oxide with dissolved Cu were found in the Si crystal wafer.展开更多
文摘The effect of rapid thermal annealing （RTA） ambient on denuded zone and oxygen precipitates in Czochralski （CZ） silicon wafers is studied in this paper. N2 and a N2/NH3 mixture are used as RTA ambient. It is demonstrated that a high density of oxygen precipitates and thin denuded zone are obtained in N2/NH3 ambient,while a relatively lower density of oxygen precipitates and thicker denuded zone are observed in N2 ambient. As the RTA duration times increased, the oxygen precipitate density increased and the denuded zone depth decreased. X-ray photoelectron spectroscopy （XPS） data and atomic force microscope （AFM） results show that there RTA process,which can explain the different effect of RTA was a surface nitriding reaction during the N2/NH3 ambient ambient.
文摘Bulk Czochralski silicon crystals were decorated with Cu and characterized by transmission electron microscopy (TEM) with energy-dispersive spectroscopy (EDS), atomic force microscopy (AFM), optical microscopy (OM), scanning electron microscopy (SEM), and photoluminescence spectroscopy (PL). The vacancy-type core, oxidation-induced stacking faults (OISF) ring, nearly defect-free ring, and self-interstitial-type rich outer ring were delineated in the Si crystal wafer. At the surface of the Si crystal, vertical-horizontal line (V-H line) defects and windmill defects (W-defects) were formed instead of OISF. The families of growth planes and directions were expressed as {011} and for the V-H line and {010} and for W-defects, respectively. In addition to V-H line defects and W-defects, pits or voids and Si oxide with dissolved Cu were found in the Si crystal wafer.
