The zinc oxide seed film was coated on conductive glass (FTO) substrate by the Czochralski method,Zinc acetate and hexamethylenetetramine were used as raw materials to prepare growth solution,and then ZnO film was pre...The zinc oxide seed film was coated on conductive glass (FTO) substrate by the Czochralski method,Zinc acetate and hexamethylenetetramine were used as raw materials to prepare growth solution,and then ZnO film was prepared by a low-temperature solution method.The effects of annealing temperature on the morphology,structure,stress and optical properties of ZnO films were studied.The thin films were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),UV-visible absorption spectra (UV-vis),photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS).The results show that the films are ZnO nanorods.With the increase of annealing temperature,the diameter of the rod increases,and the nanorods tend to be oriented.The band gap of the sample obtained from the light absorption spectra first increases and then decreases with the increase of annealing temperature.When the annealing temperature is 350 ℃,the crystallinity of zinc oxide film is the highest,the band gap is close to the theoretical value of pure ZnO.展开更多
SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared （FTIR） spectroscopy at room temperature （RT） and 10 K. A new peak appears at the wave number of 710 cm^-1 and the s...SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared （FTIR） spectroscopy at room temperature （RT） and 10 K. A new peak appears at the wave number of 710 cm^-1 and the spectroscopy becomes clearer with an increase in Ge content. The absorption strength and wave sharp of the 710 cm^-1 peak are independent of temperature. The relation of the absorption coefficient amax, the band width of half maximum （BWHM） Wit2 of the 710 cm^-1 peak, and the Ge concentration is determined with the Ge content obtained by SEM-EDX. The conversion factor is k = 1.211 at 10 K. Therefore, the Ge content in high concentration Ge doped CZ-Si single crystals can be determined by FTIR.展开更多
A numerical study was carried out to describe the flow field structure of an oxide melt under 1) the effect of internal radiation through the melt (and the crystal), and 2) the impact of surface tension-driven forces ...A numerical study was carried out to describe the flow field structure of an oxide melt under 1) the effect of internal radiation through the melt (and the crystal), and 2) the impact of surface tension-driven forces during Czochralski growth process. Throughout the present Finite Volume Method calculations, the melt is a Boussinnesq fluid of Prandtl number 4.69 and the flow is assumed to be in a steady, axisymmetric state. Particular attention is paid to an undulating structure of buoyancy-driven flow that appears in optically thick oxide melts and persists over against forced convection flow caused by the externally imposed rotation of the crystal. In a such wavy pattern of the flow, particularly for a relatively higher Rayleigh number , a small secondary vortex appears nearby the crucible bottom. The structure of the vortex which has been observed experimentally is studied in some details. The present model analysis discloses that, though both of the mechanisms 1) and 2) end up in smearing out the undulating structure of the flow, the effect of thermocapillary forces on the flow pattern is distinguishably different. It is shown that for a given dynamic Bond number, the behavior of the melt is largely modified. The transition corresponds to a jump discontinuity in the magnitude of the flow stream function.展开更多
基金Funded by Henan International Science and Technology Cooperation Program (No.152102410035)Ph D Research Startup Foundation of Henan University of Science and Technology(No.13480107)。
文摘The zinc oxide seed film was coated on conductive glass (FTO) substrate by the Czochralski method,Zinc acetate and hexamethylenetetramine were used as raw materials to prepare growth solution,and then ZnO film was prepared by a low-temperature solution method.The effects of annealing temperature on the morphology,structure,stress and optical properties of ZnO films were studied.The thin films were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),UV-visible absorption spectra (UV-vis),photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS).The results show that the films are ZnO nanorods.With the increase of annealing temperature,the diameter of the rod increases,and the nanorods tend to be oriented.The band gap of the sample obtained from the light absorption spectra first increases and then decreases with the increase of annealing temperature.When the annealing temperature is 350 ℃,the crystallinity of zinc oxide film is the highest,the band gap is close to the theoretical value of pure ZnO.
基金The work is financially supported by the National Natural Science Foundation of China (No. 59772037)the NaturalScience Foundation of Hebei Province, China (No. 500016).
文摘SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared （FTIR） spectroscopy at room temperature （RT） and 10 K. A new peak appears at the wave number of 710 cm^-1 and the spectroscopy becomes clearer with an increase in Ge content. The absorption strength and wave sharp of the 710 cm^-1 peak are independent of temperature. The relation of the absorption coefficient amax, the band width of half maximum （BWHM） Wit2 of the 710 cm^-1 peak, and the Ge concentration is determined with the Ge content obtained by SEM-EDX. The conversion factor is k = 1.211 at 10 K. Therefore, the Ge content in high concentration Ge doped CZ-Si single crystals can be determined by FTIR.
文摘A numerical study was carried out to describe the flow field structure of an oxide melt under 1) the effect of internal radiation through the melt (and the crystal), and 2) the impact of surface tension-driven forces during Czochralski growth process. Throughout the present Finite Volume Method calculations, the melt is a Boussinnesq fluid of Prandtl number 4.69 and the flow is assumed to be in a steady, axisymmetric state. Particular attention is paid to an undulating structure of buoyancy-driven flow that appears in optically thick oxide melts and persists over against forced convection flow caused by the externally imposed rotation of the crystal. In a such wavy pattern of the flow, particularly for a relatively higher Rayleigh number , a small secondary vortex appears nearby the crucible bottom. The structure of the vortex which has been observed experimentally is studied in some details. The present model analysis discloses that, though both of the mechanisms 1) and 2) end up in smearing out the undulating structure of the flow, the effect of thermocapillary forces on the flow pattern is distinguishably different. It is shown that for a given dynamic Bond number, the behavior of the melt is largely modified. The transition corresponds to a jump discontinuity in the magnitude of the flow stream function.
