In this study, organic solar cells (OSCs) with an active layer, a blend of polymer of non-fullerene (NFA) Y6 as an acceptor, and donor PBDB-T-2F as donor were simulated through the one-dimensional solar capacitance si...In this study, organic solar cells (OSCs) with an active layer, a blend of polymer of non-fullerene (NFA) Y6 as an acceptor, and donor PBDB-T-2F as donor were simulated through the one-dimensional solar capacitance simulator (SCAPS-1D) software to examine the performance of this type of organic polymer thin-film solar cell by varying the thickness of the active layer. PFN-Br interfacial layer entrenched in OPV devices gives overall enhanced open-circuit voltage, short-circuit current density and fill factor thus improving device performance. PEDOT: PSS is an electro-conductive polymer solution that has been extensively utilized in solar cell devices as a hole transport layer (HTL) due to its strong hole affinity, good thermal and mechanical stability, high work function, and high transparency in the visible range. The structure of the organic solar cell is ITO/PEDOT: PSS/BTP-4F: PBDB-T-2F/PFN-Br/Ag. Firstly, the active layer thickness was optimized to 100 nm;after that, the active-layer thickness was varied up to 900 nm. The results of these simulations demonstrated that the active layer thickness improves efficiency significantly up to 500 nm, then it decreased with increasing the thickness of the active layer from 600 nm, also notice that the short circuit current and the fill factor decrease with increasing the active layer from 600 nm, while the open voltage circuit increased with increasing the thickness of the active layer. The optimum thickness is 500 nm.展开更多
Bipolar disorder presents significant challenges in clinical management, characterized by recurrent episodes of depression and mania often accompanied by impairment in functioning. This study investigates the efficacy...Bipolar disorder presents significant challenges in clinical management, characterized by recurrent episodes of depression and mania often accompanied by impairment in functioning. This study investigates the efficacy of pharmacological interventions and rehabilitation strategies to improve patient outcomes and quality of life. Utilizing a randomized controlled trial with multiple treatment arms, participants will receive pharmacotherapy, polypharmacotherapy, rehabilitation interventions, or combination treatments. Outcome measures will be assessed using standardized scales, including the Hamilton Depression Scale, Yale-Brown Obsessive Compulsive Scale (Y-BOCS), and Mania Scale. Preliminary data suggest improvements in symptom severity and functional outcomes with combination treatments. This research aims to inform clinical practice, guide treatment decisions, and ultimately enhance the quality of care for individuals living with bipolar disorder. Findings will be disseminated through peer-reviewed journals and scientific conferences to advance knowledge in this field.展开更多
Both D-stability and finite L2-gain properties are studiedfor a class of uncertain discrete-time systems with timevaryingnetwork-induced delays. By using coordinate transformand delay partition, the D-stability and H...Both D-stability and finite L2-gain properties are studiedfor a class of uncertain discrete-time systems with timevaryingnetwork-induced delays. By using coordinate transformand delay partition, the D-stability and H∞ performance problemsfor such networked control systems （NCSs） are equivalentlytransferred into the corresponding problems for switching systemswith arbitrary switching. Then, a sufficient condition for the existenceof the robust D-stabilizing controllers is derived in termsof linear matrix inequality （LMI）, and the design method is alsopresented for the state feedback controllers which guarantee thatall the closed-loop poles remain inside the specified disk D（α,r）and the desired disturbance attenuation level. Finally, an illustrativeexample is given to demonstrate the effectiveness of the proposedresults.展开更多
The silicon-on-insulator(SOI) 1 × 2 Y-junction optical waveguide switch has been proposed and fabricated, which is based on the large cross-ction single--mode rib waveguide condition, the waveguide--vanishing eff...The silicon-on-insulator(SOI) 1 × 2 Y-junction optical waveguide switch has been proposed and fabricated, which is based on the large cross-ction single--mode rib waveguide condition, the waveguide--vanishing effect and the free-carrier plasma dispersion effect. The SOI switch utilizes silicon and silicon dioxide thermal bonding and back--polishing. The insertion loss and extinction ratio of the device are measured to be less than 4. 78 dB and 20. 8dB respectively at a wavelength of 1. 3pm and an injection current of 45mA. The response time is about 160us.展开更多
The resistive random access memory(RRAM)has stimulated a variety of promising applications including programmable analog circuit,massive data storage,neuromorphic computing,etc.These new emerging applications have hug...The resistive random access memory(RRAM)has stimulated a variety of promising applications including programmable analog circuit,massive data storage,neuromorphic computing,etc.These new emerging applications have huge demands on high integration density and low power consumption.The cross-point configuration or passive array,which offers the smallest footprint of cell size and feasible capability of multi-layer stacking,has received broad attention from the research community.In such array,correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells.This target requires nonlinear I-V characteristics of the memory cell,which can be realized by either adding separate selector or developing implicit build-in nonlinear cells.The performance of a passive array largely depends on the cell nonlinearity,reliability,on/off ratio,line resistance,thermal coupling,etc.This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration.First,the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures.Next,the state of the arts on the development of various selector devices and self-selective cells are presented.Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles.Then,the reliability issues in 3D array are summarized in terms of uniformity,endurance,retention,and disturbance.Subsequently,scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed,and applications of 3D RRAM beyond storage,such as neuromorphic computing and CMOL circuit are discussed later.Summary and outlooks are given in the final.展开更多
The Development of 3D CAD technology presents a new effective tool in designing outdoor switch yard for power plant. A new layout pattern of 330 kV switch yard (SWYD) of aligned type was studied with this method. Some...The Development of 3D CAD technology presents a new effective tool in designing outdoor switch yard for power plant. A new layout pattern of 330 kV switch yard (SWYD) of aligned type was studied with this method. Some issues about computerized 3D modes applied in SWYD design are also discussed in this paper.展开更多
The silicon-on-insulator(SOI) 1×2 Y-junction optical waveguide switch has been proposed and fabricated,which is based on the large cross-section single-mode rib waveguide condition,the waveguide-vanishing effect ...The silicon-on-insulator(SOI) 1×2 Y-junction optical waveguide switch has been proposed and fabricated,which is based on the large cross-section single-mode rib waveguide condition,the waveguide-vanishing effect and the free-carrier plasma dispersion effect.In the switch,the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing.The insertion loss and extinction ratio of the device are measured to be less than 4.78 dB and 20.8 dB respectively at a wavelength of 1.3 μm and an injection current of 45 mA.Response time is about 160 ns.展开更多
A high-speed high-accuracy fully differenttial operational amplifier （op-amp） is realized based on no-Miller-capacitor feedforward （NMCF） compensation scheme. In order to achieve a good phase margin, the NMCF comp...A high-speed high-accuracy fully differenttial operational amplifier （op-amp） is realized based on no-Miller-capacitor feedforward （NMCF） compensation scheme. In order to achieve a good phase margin, the NMCF compensation scheme uses the positive phase shift of left-half-plane （LHP） zero caused by the feedforvvard path to counteract the negative phase shift of the non-dominant pole. Compared to traditional Miller compensation method, the op-amp obtains high gain and wide band synchronously without the pole-splitting effect while saves significant chip area due to the absence of the Miller capacitor. Simulated by the 0.35 μm CMOS RF technology, the result shows that the open-loop gain of the op-amp is 118 dB with the unity gain-bandwidth （UGBW） of 1 GHz, and the phase margin is 61°while the settling time is 5.8 ns when achieving 0.01% accuracy. The op-amp is especially suitable for the front-end sample/hold （S/H） cell and the multiplying D/A converter （MDAC） module of the high-speed high-resolution pipelined A/D converters （AVCs）.展开更多
文摘In this study, organic solar cells (OSCs) with an active layer, a blend of polymer of non-fullerene (NFA) Y6 as an acceptor, and donor PBDB-T-2F as donor were simulated through the one-dimensional solar capacitance simulator (SCAPS-1D) software to examine the performance of this type of organic polymer thin-film solar cell by varying the thickness of the active layer. PFN-Br interfacial layer entrenched in OPV devices gives overall enhanced open-circuit voltage, short-circuit current density and fill factor thus improving device performance. PEDOT: PSS is an electro-conductive polymer solution that has been extensively utilized in solar cell devices as a hole transport layer (HTL) due to its strong hole affinity, good thermal and mechanical stability, high work function, and high transparency in the visible range. The structure of the organic solar cell is ITO/PEDOT: PSS/BTP-4F: PBDB-T-2F/PFN-Br/Ag. Firstly, the active layer thickness was optimized to 100 nm;after that, the active-layer thickness was varied up to 900 nm. The results of these simulations demonstrated that the active layer thickness improves efficiency significantly up to 500 nm, then it decreased with increasing the thickness of the active layer from 600 nm, also notice that the short circuit current and the fill factor decrease with increasing the active layer from 600 nm, while the open voltage circuit increased with increasing the thickness of the active layer. The optimum thickness is 500 nm.
文摘Bipolar disorder presents significant challenges in clinical management, characterized by recurrent episodes of depression and mania often accompanied by impairment in functioning. This study investigates the efficacy of pharmacological interventions and rehabilitation strategies to improve patient outcomes and quality of life. Utilizing a randomized controlled trial with multiple treatment arms, participants will receive pharmacotherapy, polypharmacotherapy, rehabilitation interventions, or combination treatments. Outcome measures will be assessed using standardized scales, including the Hamilton Depression Scale, Yale-Brown Obsessive Compulsive Scale (Y-BOCS), and Mania Scale. Preliminary data suggest improvements in symptom severity and functional outcomes with combination treatments. This research aims to inform clinical practice, guide treatment decisions, and ultimately enhance the quality of care for individuals living with bipolar disorder. Findings will be disseminated through peer-reviewed journals and scientific conferences to advance knowledge in this field.
基金supported by the National Natural Science Foundation of China(61403344)
文摘Both D-stability and finite L2-gain properties are studiedfor a class of uncertain discrete-time systems with timevaryingnetwork-induced delays. By using coordinate transformand delay partition, the D-stability and H∞ performance problemsfor such networked control systems （NCSs） are equivalentlytransferred into the corresponding problems for switching systemswith arbitrary switching. Then, a sufficient condition for the existenceof the robust D-stabilizing controllers is derived in termsof linear matrix inequality （LMI）, and the design method is alsopresented for the state feedback controllers which guarantee thatall the closed-loop poles remain inside the specified disk D（α,r）and the desired disturbance attenuation level. Finally, an illustrativeexample is given to demonstrate the effectiveness of the proposedresults.
文摘The silicon-on-insulator(SOI) 1 × 2 Y-junction optical waveguide switch has been proposed and fabricated, which is based on the large cross-ction single--mode rib waveguide condition, the waveguide--vanishing effect and the free-carrier plasma dispersion effect. The SOI switch utilizes silicon and silicon dioxide thermal bonding and back--polishing. The insertion loss and extinction ratio of the device are measured to be less than 4. 78 dB and 20. 8dB respectively at a wavelength of 1. 3pm and an injection current of 45mA. The response time is about 160us.
基金the National Key R&D Program of China(Grant Nos.2018YFB0407501 and 2016YFA0201800)the National Natural Science Foundation of China(Grant Nos.61804173,61922083,61804167,61904200,and 61821091)the fourth China Association for Science and Technology Youth Talent Support Project(Grant No.2019QNRC001).
文摘The resistive random access memory(RRAM)has stimulated a variety of promising applications including programmable analog circuit,massive data storage,neuromorphic computing,etc.These new emerging applications have huge demands on high integration density and low power consumption.The cross-point configuration or passive array,which offers the smallest footprint of cell size and feasible capability of multi-layer stacking,has received broad attention from the research community.In such array,correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells.This target requires nonlinear I-V characteristics of the memory cell,which can be realized by either adding separate selector or developing implicit build-in nonlinear cells.The performance of a passive array largely depends on the cell nonlinearity,reliability,on/off ratio,line resistance,thermal coupling,etc.This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration.First,the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures.Next,the state of the arts on the development of various selector devices and self-selective cells are presented.Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles.Then,the reliability issues in 3D array are summarized in terms of uniformity,endurance,retention,and disturbance.Subsequently,scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed,and applications of 3D RRAM beyond storage,such as neuromorphic computing and CMOL circuit are discussed later.Summary and outlooks are given in the final.
文摘The Development of 3D CAD technology presents a new effective tool in designing outdoor switch yard for power plant. A new layout pattern of 330 kV switch yard (SWYD) of aligned type was studied with this method. Some issues about computerized 3D modes applied in SWYD design are also discussed in this paper.
文摘The silicon-on-insulator(SOI) 1×2 Y-junction optical waveguide switch has been proposed and fabricated,which is based on the large cross-section single-mode rib waveguide condition,the waveguide-vanishing effect and the free-carrier plasma dispersion effect.In the switch,the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing.The insertion loss and extinction ratio of the device are measured to be less than 4.78 dB and 20.8 dB respectively at a wavelength of 1.3 μm and an injection current of 45 mA.Response time is about 160 ns.
文摘A high-speed high-accuracy fully differenttial operational amplifier （op-amp） is realized based on no-Miller-capacitor feedforward （NMCF） compensation scheme. In order to achieve a good phase margin, the NMCF compensation scheme uses the positive phase shift of left-half-plane （LHP） zero caused by the feedforvvard path to counteract the negative phase shift of the non-dominant pole. Compared to traditional Miller compensation method, the op-amp obtains high gain and wide band synchronously without the pole-splitting effect while saves significant chip area due to the absence of the Miller capacitor. Simulated by the 0.35 μm CMOS RF technology, the result shows that the open-loop gain of the op-amp is 118 dB with the unity gain-bandwidth （UGBW） of 1 GHz, and the phase margin is 61°while the settling time is 5.8 ns when achieving 0.01% accuracy. The op-amp is especially suitable for the front-end sample/hold （S/H） cell and the multiplying D/A converter （MDAC） module of the high-speed high-resolution pipelined A/D converters （AVCs）.
