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A 1V,156.7μW,65.9dB Rail-to-Rail Operational Amplifier by Means of Negative Resistance Load and Replica-Amplifier Gain Enhancement 被引量:2
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作者 刘爱荣 杨华中 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第12期2101-2105,共5页
A low-voltage, low-power, and high-gain rail-to-rail operational amplifier (OpAmp) is presented. The replica-amplifier gain enhancement technique is applied to improve the DC gain of the amplifier, which does not de... A low-voltage, low-power, and high-gain rail-to-rail operational amplifier (OpAmp) is presented. The replica-amplifier gain enhancement technique is applied to improve the DC gain of the amplifier, which does not degrade the output swing and is very suitable for low-voltage applications. In a 0. 18/μm standard CMOS process,a 1V OpAmp with rail-to-rail output is designed. For a load capacitance of 5 pF,simulation by HSPICE shows that this OpAmp achieves an effective open-loop DC gain of 65. 9dB,gain bandwidth of 70.28 MHz,and phase margin of 50 with a quiescent power dissipation of 156.7μW. 展开更多
关键词 low-voltage low-power high dc gain replica-amplifier gain enhancement negative resistance load
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SOI衬底和n^+衬底上SiGe HBT的研制
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作者 姚飞 薛春来 +1 位作者 成步文 王启明 《电子器件》 CAS 2007年第5期1529-1531,共3页
分别在高掺杂的Si衬底和SOI衬底上用超高真空化学汽相淀积(UHV/CVD)系统生长了SiGe/Si外延材料,并采用2μm的工艺制备出SiGe/SiHBT(Heterostructure Bipolar Transistor).使用晶体管图示仪测量晶体管的特性.性能测试表明,在SOI衬底上获... 分别在高掺杂的Si衬底和SOI衬底上用超高真空化学汽相淀积(UHV/CVD)系统生长了SiGe/Si外延材料,并采用2μm的工艺制备出SiGe/SiHBT(Heterostructure Bipolar Transistor).使用晶体管图示仪测量晶体管的特性.性能测试表明,在SOI衬底上获得了直流增益β大于300的SiGeHBT,但SOI衬底上的SiGeHBT表现出较严重的自热效应.此外,使用Al电极制备的HBT具有大于0.3V的开启电压,而使用TiAu电极的HBT开启电压远小于该值.对不同衬底上研制的不同电极的SiGeHBT的直流特性进行了比较,并对产生不同特性的原因进行了分析. 展开更多
关键词 Si基半导体器件 SIGE HBT SOI衬底 电极 特性曲线 直流增益β
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A robust and simple two-mode digital calibration technique for pipelined ADC
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作者 殷秀梅 赵南 +1 位作者 玻梅 杨华中 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第3期81-87,共7页
This paper presents a two-mode digital calibration technique for pipelined analog-to-digital converters (ADC).The proposed calibration eliminates the errors of residual difference voltage induced by capacitor mismat... This paper presents a two-mode digital calibration technique for pipelined analog-to-digital converters (ADC).The proposed calibration eliminates the errors of residual difference voltage induced by capacitor mismatch of pseudorandom(PN) sequence injection capacitors at the ADC initialization,while applies digital background calibration to continuously compensate the interstage gain errors in ADC normal operation.The presented technique not only reduces the complexity of analog circuit by eliminating the implementation of PN sequence with accurate amplitude in analog domain,but also improves the performance of digital background calibration by minimizing the sensitivity of calibration accuracy to sub-ADC errors.The use of opamps with low DC gains in normal operation makes the proposed design more compatible with future nanometer CMOS technology.The prototype of a 12-bit 40-MS/s pipelined ADC with the two-mode digital calibration is implemented in 0.18-μm CMOS process.Adopting a simple telescopic opamp with a DC gain of 58-dB in the first stage,the measured SFDR and SNDR within the first Nyquist zone reach 80-dB and 66-dB,respectively.With the calibration,the maximum integral nonlinearity (INL) of the ADC reduces from 4.75-LSB to 0.65-LSB,while the ADC core consumes 82-mW at 3.3-V power supply. 展开更多
关键词 analog-to-digital converter pipelined Adc background calibration finite dc gains of opamps capacitor mismatch pseudorandom noise sequence
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High-Consistency Behavior Modeling of a Switched-Capacitor Sigma-Delta Modulator in SIMULINK
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作者 欧伟 吴晓波 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第11期2209-2217,共9页
To improve the simulation accuracy of SIMULINK, a novel inclusive behavior model of an integrator is proposed that introduces the effects of different circuit nonidealities of a switched-capacitor sigma-delta modulato... To improve the simulation accuracy of SIMULINK, a novel inclusive behavior model of an integrator is proposed that introduces the effects of different circuit nonidealities of a switched-capacitor sigma-delta modulator into SIMULIK simulation. The nonlinear DC gain and nonlinear settling process are introduced into the op-amp module. The signaldependent charge injection and nonlinear resistance are introduced into the switch module. In addition, the noise source including flicker and thermal noise is introduced into system as an independent module. The novel model is verified by SIMULINK behavioral simulations. The results are compared with results from circuit level simulation in Cadence SPICE using TSMC 0.35μm mixed signal technology. It shows that the novel model succeeds in introducing the influences of the nonidealities into behavior simulation to more realistically describe the circuit performances and increase the accuracy of SIMULINK simulation. 展开更多
关键词 sigma-delta modulator nonlinear dc gain feed-through slewing distortion phase margin charge injection
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Study and analysis of coefficient mismatch in a MASH21 sigma—delta modulator 被引量:1
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作者 葛彬杰 王新安 +2 位作者 张兴 冯晓星 汪清勤 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第1期79-82,共4页
The quantization noise leakage of the first stage in a MASH21 sigma-delta modulator is analyzed. The results show that the finite DC gain of the opamp is the main reason for noise leakage, and finite GBW and SR only g... The quantization noise leakage of the first stage in a MASH21 sigma-delta modulator is analyzed. The results show that the finite DC gain of the opamp is the main reason for noise leakage, and finite GBW and SR only generate harmonic distortion. The relationship between DC gain and leakage is modeled and conclusions on design criteria are reached. As an example, a MASH21 modulator for a digital audio application is realized. This modulator, fabricated in an 0.18 μm mixed signal process, achieves an SNDR of 91 dB with 1.8 V supply, which verifies the analysis and design criteria. 展开更多
关键词 MISMATCH LEAKAGE MODELING SIGMA-DELTA MODELING dc gain
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A low power flexible PGA for software defined radio systems
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作者 李国锋 吴南健 《Journal of Semiconductors》 EI CAS CSCD 2012年第5期120-125,共6页
This paper proposes a new low power structure to improve the trade-off between the bandwidth and the power consumption of a programmable gain amplifier(PGA).The PGA consists of three-stage amplifiers, which includes... This paper proposes a new low power structure to improve the trade-off between the bandwidth and the power consumption of a programmable gain amplifier(PGA).The PGA consists of three-stage amplifiers, which includes a variable gain amplifier and DC offset cancellation circuits.The cutoff frequency of the DC offset cancellation circuits can be changed from 4 to 80 kHz.The chip was fabricated in 0.13μm CMOS technology. Measurement results showed that the gain of the PGA can be programmed from -5 to 60 dB.At the gain setting of 60 dB,the bandwidth can be tuned from 1 to 10 MHz,while the power consumption can be programmed from 850μA to 3.2 mA at a supply voltage of 1.2 V.Its in-band OIP3 result is at 14 dBm. 展开更多
关键词 low power dc offset programmable gain amplifier software defined radio
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